摘要:
A fused silica glass which exhibits low compaction when exposed to high intensity excimer radiation, also exhibits low optical path distortion after exposure to a high intensity radiation dose. Also disclosed is a method for improving the select ratio of fused silica glass for photolithography, by predicting the optical path distortion of the glass under use by determining the intrinsic densification of the glass at a given number of pulses and fluence per pulse. Mathematical modeling methods are also disclosed for use in producing a fused silica stepper lens having low compaction under high intensity excimer radiation; and for determining optical path distortion caused by high energy radiation in fused silica glass.
摘要:
The invention relates to fused silica having low compaction under high energy irradiation, particularly adaptable for use in photolithography applications.
摘要:
The invention provides a method of making a crystal direction of the optical calcium fluoride crystal. In a preferred embodiment, the below 194 nm transmitting optical element is a oriented calcium fluoride lens. In a preferred embodiment, the below 194 nm transmitting optical element is a oriented calcium fluoride beam splitter.
摘要:
A method of writing a light guiding structure in a bulk glass substrate including selecting a bulk glass substrate made from a soft silica-based material; and focusing an excimer laser beam at a focus within said substrate while translating the focus relative to the substrate along a scan path at a scan speed effective to induce an increase in the refractive index of the material along the scan path relative to that of the unexposed material while incurring substantially no laser induced breakdown of the material along the scan path. Various optical devices, including waveguides can be made in this way.
摘要:
The invention provides a UV below 200 nm lithography method utilizing mixed calcium strontium fluoride crystals. The invention includes providing a below 200 nm radiation source for producing
摘要:
A microstructured optical waveguide that supports the propagation of an optical signal of a desired wavelength is described. The optical waveguide includes a core region formed from an optically nonlinear material having a &ggr; of at least about 2.5×10−19 m2/W at 1260 nm. The optical waveguide also includes a cladding region surrounding the core region, the cladding region including a bulk material and a lattice of columns located in the bulk material, the lattice of columns having a pitch, and each column having a cross-sectional area. The pitch of the lattice and the areas of the columns are selected such that the dispersion of the optical signal at the desired wavelength is within the range of about −70 ps/nm-km to about 70 ps/nm-km.
摘要:
Disclosed is a photonic band-gap crystal waveguide having the physical dimension of the photonic crystal lattice and the size of the defect selected to provide for optimum mode power confinement to the defect. The defect has a boundary which has a characteristic numerical value associated with it. The ratio of this numerical value to the pitch of the photonic crystal is selected to avoid surface modes found to exist in certain configurations of the photonic band-gap crystal waveguide. Embodiments in accord with the invention having circular and hexagonal defect cross sections are disclosed and described. A method of making the photonic band-gap crystal waveguide is also disclosed and described.
摘要:
Disclosed is a photonic band-gap crystal waveguide having the physical dimension of the photonic crystal lattice and the size of the defect selected to provide for optimum mode power confinement to the defect. The defect has a boundary which has a characteristic numerical value associated with it. The ratio of this numerical value to the pitch of the photonic crystal is selected to avoid surface modes found to exist in certain configurations of the photonic band-gap crystal waveguide. Embodiments in accord with the invention having circular and hexagonal defect cross sections are disclosed and described. A method of making the photonic band-gap crystal waveguide is also disclosed and described.
摘要:
Stress-induced photoelastic birefringence compensates for intrinsic birefringence of cubic crystalline structures in deep ultraviolet (less than 200 nm) microlithographic imaging systems. Both the photoelastic birefringence and the intrinsic birefringence are expressed in a tensor format simplified by the symmetries of cubic crystalline structures. The stress-induced photoelastic birefringence can be sized to individually compensate for intrinsic birefringence exhibited in the same optical elements or preferably to collectively compensate for the cumulative effects of intrinsic birefringence in other optical elements in the lithography system.