公开(公告)号：US5672522A

公开(公告)日：1997-09-30

申请号：US611117

申请日：1996-03-05

申请人： Dwight Christopher Streit ,  Michael Lammert ,  Aaron Kenji Oki

发明人： Dwight Christopher Streit ,  Michael Lammert ,  Aaron Kenji Oki

IPC分类号： H01L29/73 ,  H01L21/265 ,  H01L21/331 ,  H01L21/74 ,  H01L29/205 ,  H01L29/737

CPC分类号： H01L29/66318 ,  H01L21/26546 ,  H01L21/746 ,  H01L29/7371 ,  Y10S148/01 ,  Y10S148/011 ,  Y10S148/072

摘要： A method for fabricating an HBT in which the subcollector-base junction, which contributes to the base-collector capacitance of the device, is reduced by using a selective subcollector. In particular, subcollector areas of the device that do not contribute to collector resistance reduction are eliminated, thereby reducing the subcollector area, which, in turn, reduces the base-collector capacitance. As such, the maximum power-gain frequency f.sub.max is increased.

摘要翻译： 通过使用选择性子集电极来减少有助于器件的基极 - 集电极电容的子集电极 - 基极结的HBT的制造方法。 特别地，消除了不有助于集电极电阻降低的器件的子集电极区域，从而减小了子集电极区域，这进而降低了集电极电容。 因此，最大功率增益频率fmax增加。

公开(公告)号：US5838031A

公开(公告)日：1998-11-17

申请号：US611265

申请日：1996-03-05

申请人： Kevin Wesley Kobayashi ,  Dwight Christopher Streit ,  Aaron Kenji Oki ,  Donald Katsu Umemto

发明人： Kevin Wesley Kobayashi ,  Dwight Christopher Streit ,  Aaron Kenji Oki ,  Donald Katsu Umemto

IPC分类号： H01L27/06 ,  H01L21/8232 ,  H03D7/00 ,  H03D7/12 ,  H03F1/32 ,  H03F3/04 ,  H03F3/193 ,  H03F3/21 ,  H03F3/345 ,  H01L31/0328 ,  H01P3/08

CPC分类号： H03F3/211 ,  H03F1/32 ,  H03F3/1935 ,  H03F3/3455 ,  H03F2200/294 ,  H03F2200/372

摘要： 4-terminal HEMT-HBT composite devices, based upon monolithically integrated HEMT-HBT technology and configured in various topologies, are useful in a wide range of applications which currently utilize discrete MMICs. In particular, the 4-terminal topologies are easily configured as 3-terminal composite devices useful in various 2-port and 3-port MMIC circuit applications, such as low noise-high linearity amplifiers as well as mixers, which provide the benefits of a reduction in size, as well as corresponding cost while providing better performance than utilizing either HEMT or HBT devices individually.

摘要翻译： 基于单片集成HEMT-HBT技术并配置在各种拓扑中的4端子HEMT-HBT复合器件在目前使用离散MMIC的广泛应用中是有用的。 特别地，4端子拓扑结构容易配置为可用于各种2端口和3端口MMIC电路应用中的3端复合器件，例如低噪声高线性度放大器以及混频器，其提供了一个 减小尺寸以及相应的成本，同时提供比单独使用HEMT或HBT设备更好的性能。

公开(公告)号：US5648666A

公开(公告)日：1997-07-15

申请号：US227148

申请日：1994-04-13

申请人： Liem Thanh Tran ,  Dwight Christopher Streit ,  Aaron Kenji Oki

发明人： Liem Thanh Tran ,  Dwight Christopher Streit ,  Aaron Kenji Oki

IPC分类号： H01L29/73 ,  H01L21/203 ,  H01L21/331 ,  H01L29/205 ,  H01L29/737 ,  H01L29/70

CPC分类号： H01L29/66318 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L29/7371

摘要： This invention discloses a heterojunction bipolar transistor (HBT) which includes a relatively thin intrinsic collector region and a relatively thick extrinsic collector region such that collector-base capacitance is reduced and electron transit time is maintained. The fabrication of the HBT includes loading a semi-insulating substrate into an molecular beam epitaxy machine, and growing a sub-collector contact layer, a bottom collector layer and a top collector layer on the substrate. Next, the substrate is removed from the molecular beam epitaxy machine and the top collector layer is etched by a photolithographic process to produce separate intrinsic and extrinsic collector regions. Then, the substrate is again loaded into the molecular beam epitaxy machine so that the base and emitter layers can be grown. And finally, the emitter layer is etched to form an emitter mesa only over the intrinsic semiconductor region.

摘要翻译： 本发明公开了一种异质结双极晶体管（HBT），其包括相对薄的本征集电极区域和相对较厚的非本征集电极区域，使得集电极 - 基极电容减小并保持电子传输时间。 HBT的制造包括将半绝缘衬底加载到分子束外延机中，并在衬底上生长副集电极接触层，底部集电极层和顶部集电极层。 接下来，从分子束外延机器去除衬底，并通过光刻工艺蚀刻顶部集电极层，以产生单独的本征和外部集电极区域。 然后，将衬底再次加载到分子束外延机中，使得可以生长基极和发射极层。 最后，蚀刻发射极层，仅在本征半导体区域上形成发射极台面。