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公开(公告)号：US5045808A
公开(公告)日：1991-09-03
申请号：US485356
申请日：1990-02-26
申请人： Stewart S. Taylor
发明人： Stewart S. Taylor
CPC分类号： H03F3/3455 , H03F1/226 , H03F2200/372
摘要： A high-gain solid-state amplifier (20) includes an amplification stage including a transistor (Q.sub.1) having a current-dependent transconductance value. The transistor is operatively connected to a load resistor (R.sub.L1) through which a load current (I.sub.1) flows. The value of the load resistor together with the transconductance value affects the voltage gain of the amplifier. A resistor (R.sub.2) provides a supplemental bias current (I.sub.2) to a current summing node (A). The current summing node sums the load current and the supplemental bias current and provides the transistor with a total current (I.sub.d) that affects the transconductance value. The value of the supplemental bias current is chosen to supplement the load current to provide a predetermined total current so that the voltage gain may be adjusted by adjusting the load resistor without changing the transconductance value. Alternatively, the amplifier voltage gain may be enhanced by increasing the supplemental bias current and transistor size in a known manner while maintaining a fixed value of the load resistor.
摘要翻译： 高增益固态放大器（20）包括具有依赖于电流的跨导值的晶体管（Q1）的放大级。 晶体管可操作地连接到负载电流（I1）流过的负载电阻（RL1）。 负载电阻的值与跨导值一起影响放大器的电压增益。 电阻器（R2）向电流求和节点（A）提供补充偏置电流（I2）。 电流求和节点将负载电流和补充偏置电流相加，并为晶体管提供影响跨导值的总电流（Id）。 选择补偿偏置电流的值来补充负载电流以提供预定的总电流，使得可以通过在不改变跨导值的情况下调节负载电阻来调整电压增益。 或者，可以通过以已知的方式增加补充偏置电流和晶体管尺寸同时保持负载电阻器的固定值来增强放大器电压增益。
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2.发明授权Integrated circuit with temperature compensation for a field effect transistor 失效用于场效应晶体管的温度补偿的集成电路
公开(公告)号：US3703650A
公开(公告)日：1972-11-21
申请号：US3703650D
申请日：1971-09-16
申请人： SIGNETICS CORP
发明人： KENDALL LARRY J
CPC分类号： H03F3/45376 , H01L27/0211 , H03F1/306 , H03F3/3455
摘要： An integrated circuit with temperature compensation being provided for field effect transistors by a matched FET which provides an Idss which varies with temperature and which determines the drain current of the temperature compensated field effect transistors.
摘要翻译： 通过匹配的FET为场效应晶体管提供温度补偿的集成电路，其提供随温度变化的Idss，并且其确定温度补偿的场效应晶体管的漏极电流。
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3.发明授权Compensated dc amplifier input stage employing junction field effect transistors 失效补偿直流放大器输入级采用连接场效应晶体管
公开(公告)号：US3517325A
公开(公告)日：1970-06-23
申请号：US3517325D
申请日：1967-03-09
发明人： BLACKMER DAVID E
CPC分类号： H03F1/306 , H03F3/3455
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公开(公告)号：US20160013766A1
公开(公告)日：2016-01-14
申请号：US14790096
申请日：2015-07-02
CPC分类号： H03F3/193 , H03F1/342 , H03F3/245 , H03F3/3435 , H03F3/345 , H03F3/3455 , H03F2200/129 , H03F2200/18 , H03F2200/333 , H03F2200/451 , H03F2200/63 , H03F2200/93 , H04L5/1461
摘要： A circuit that includes a Darlington transistor pair having an input transistor and an output transistor configured to generate an output signal at an output node in response to an input signal received through an input node is disclosed. The circuit has a feedback coupling network coupled between the output node and the input node for feeding back to the input node a portion of an amplified version of the input signal that passes through the input transistor. The circuit further includes a bias feedback network that includes a bias transistor and a resistive network that consists of only resistive elements such that no inductors and no capacitors are provided within the bias feedback network.
摘要翻译： 公开了一种包括具有输入晶体管的达林顿晶体管对的电路和被配置为响应于通过输入节点接收的输入信号在输出节点处产生输出信号的输出晶体管。 电路具有耦合在输出节点和输入节点之间的反馈耦合网络，用于向输入节点反馈通过输入晶体管的输入信号的放大版本的一部分。 该电路还包括偏置反馈网络，其包括偏置晶体管和仅由电阻元件组成的电阻网络，使得在偏置反馈网络内不设置电感器和电容器。
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5.发明授权
公开(公告)号：US5777517A
公开(公告)日：1998-07-07
申请号：US715368
申请日：1996-09-12
申请人： Toshiki Seshita
发明人： Toshiki Seshita
CPC分类号： H03F1/483 , H03F3/3455
摘要： The semiconductor amplifier circuit provided with frequency characteristics excellent in both band width and flatness is disclosed. The amplifier circuit comprises: an input section (10) including: a first inversion amplifier circuit (11) for inversion-amplifying an input signal; and a feedback circuit (15) of a field effect transistor having a grounded gate, a source for receiving a feedback signal, and a drain connected to an output terminal of the first inversion amplifier circuit; a first level shift circuit (20) for shifting level of an output of the input section; a second inversion amplifier circuit (30) for inversion-amplifying an output of the first level shift circuit; and a second level shift circuit (40) for shifting level of an output of the second inversion amplifier circuit. Here, the amplifier circuit is characterized in that the output of the second level shift circuit (40) is applied to the feedback circuit (15) as the feedback signal.
摘要翻译： 公开了具有带宽和平坦度均优异的频率特性的半导体放大电路。 该放大器电路包括：输入部分（10），包括：用于反相放大输入信号的第一反相放大器电路（11） 以及具有接地栅极的场效应晶体管的反馈电路（15），用于接收反馈信号的源极和连接到第一反相放大器电路的输出端子的漏极; 用于移位输入部分的输出电平的第一电平移位电路（20）; 第二反相放大电路（30），用于对第一电平移位电路的输出进行反相放大; 和用于移位第二反相放大器电路的输出电平的第二电平移位电路（40）。 这里，放大器电路的特征在于，第二电平移位电路（40）的输出作为反馈信号施加到反馈电路（15）。
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公开(公告)号：US5099205A
公开(公告)日：1992-03-24
申请号：US619399
申请日：1990-11-29
申请人： Lanny L. Lewyn
发明人： Lanny L. Lewyn
CPC分类号： G05F3/262 , H03F3/3455
摘要： A balanced cascode current mirror includes first and second current paths respectively defined by first and second transistors and by third and fourth transistors. Each current path may include the sources and drains of the transistors in such path. Connections may respectively extend between the gates of the first and third transistors and between the gates of the second and fourth transistors to provide the first and third transistors with substantially identical source, gate, and drain impedances. An input current is introduced to the drain of the second transistor and an output current with substantially identical characteristics is obtained from the drain of the fourth transistor. A capacitance may be connected between the drain of the second transistor and the gate of the first transistor to produce a flow of current at high frequencies through the first current path corresponding to the input current at the drain of the second transistor. A fifth transistor may be connected in a circuit with a constant current source to regulate the current through the first and second transistors to be substantially equal to the input current at low frequencies. The gate of the fifth transistor may be connected to the drain of the second transistor, and the source of the fifth transistor may be connected to the gate of the first transistor, to provide this current regulation. The gates of the second and fourth transistors and the drain of the fifth transistor may have a common reference potential such as ground.
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公开(公告)号：US4801893A
公开(公告)日：1989-01-31
申请号：US905841
申请日：1986-09-10
申请人： Aado J. Perandi
发明人： Aado J. Perandi
CPC分类号： H03F3/3455 , H03F3/45071
摘要： Improved forward transimpedance amplifiers are provided using a field effect transistor first amplification stage, direct coupled to a bipolar junction transistor second amplification stage. In some embodiments an optional third bipolar junction transistor amplification stage is provided, direct coupled from the second stage. Negative feedback signals are connected from the output of the bipolar junction transistor stage to the input of the field effect transistor stage. The invention provides simple and low-cost amplifiers with very high forward transimpedance and other performance characteristics approaching those of an ideal amplifier, permitting the realization of a nearly ideal transimpedance amplifier with performance characteristics dominated by its feedback network.
摘要翻译： 使用场效应晶体管第一放大级提供改进的正向互阻放大器，直接耦合到双极结晶体管第二放大级。 在一些实施例中，提供了可选的第三双极结型晶体管放大级，从第二级直接耦合。 负反馈信号从双极结晶体管级的输出端连接到场效应晶体管级的输入端。 本发明提供了具有接近理想放大器的正向互阻抗和其他性能特性的简单且低成本的放大器，允许实现具有由其反馈网络主导的性能特性的几乎理想的跨阻抗放大器。
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公开(公告)号：US4739282A
公开(公告)日：1988-04-19
申请号：US887217
申请日：1986-07-21
申请人： Norman R. Scheinberg
发明人： Norman R. Scheinberg
CPC分类号： H03F1/223 , H03F1/38 , H03F3/3455
摘要： An FET amplifier having a current bleeder includes a positive feedback path for increasing the overall gain of the device. The positive feedback path includes an additional FET having its drain source path connected to the current bleeder and its gate connected to the output of the amplifier. The positive feedback causes the current through the current bleeder to vary in direct response to the output of the amplifier, thereby significantly increasing its overall gain.
摘要翻译： 具有电流放电器的FET放大器包括用于增加器件的总体增益的正反馈路径。 正反馈路径包括附加FET，其漏极源极连接到电流放电器，其栅极连接到放大器的输出端。 正反馈使得通过电流放电器的电流与放大器的输出直接响应变化，从而显着增加其总增益。
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9.发明授权
公开(公告)号：US3416093A
公开(公告)日：1968-12-10
申请号：US52453366
申请日：1966-02-02
发明人： BLACKMER DAVID E
CPC分类号： H03F3/3455 , H03F1/306 , H03F3/3067
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公开(公告)号：US5699018A
公开(公告)日：1997-12-16
申请号：US642262
申请日：1996-05-03
申请人： Kazuya Yamamoto , Kosei Maemura
发明人： Kazuya Yamamoto , Kosei Maemura
IPC分类号： H02M1/14 , H02M3/07 , H03F3/30 , H03F3/345 , H03F3/45 , H03F3/68 , H03K3/354 , H03K19/00 , H03F3/04 , G05F1/10
CPC分类号： H02M1/14 , H02M3/07 , H03F3/3061 , H03F3/3455 , H03K3/354
摘要： An output voltage of a negative voltage generator contains a ripple because of a ripple occurring in a voltage produced by a charge pump circuit in the negative voltage generator. When the negative voltage is supplied to an FET amplifier, there arises a possibility that an unwanted spurious component occurs in an output of the FET amplifier. Since each of pair of circuits, that generate a negative voltage, are made mutually complementary, two charge pump circuits are used to cancel ripples. A ripple appearing in an output voltage can therefore be suppressed, and a negative voltage can eventually be supplied more stably. When the negative voltage generator is connected to, for example, an FET amplifier in order to supply a gate bias voltage to each FET in the FET amplifier, an unwanted spurious component that may be contained in an output of the FET amplifier can be removed.
摘要翻译： 负电压发生器的输出电压由于在负电压发生器中由电荷泵电路产生的电压产生纹波而含有纹波。 当负电压被提供给FET放大器时，在FET放大器的输出中产生不想要的杂散分量的可能性。 由于产生负电压的一对电路是互相互补的，所以使用两个电荷泵电路来消除波纹。 因此，可以抑制出现在输出电压中的波动，并且最终可以更稳定地提供负电压。 当负电压发生器连接到例如FET放大器以便向FET放大器中的每个FET提供栅极偏置电压时，可以去除可能包含在FET放大器的输出中的不期望的杂散分量。
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