公开(公告)号：US10608102B2

公开(公告)日：2020-03-31

申请号：US16137235

申请日：2018-09-20

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Hokyun Ahn ,  Min Jeong Shin ,  Jeong Jin Kim ,  Hae Cheon Kim ,  Jae Won Do ,  Byoung-Gue Min ,  Hyung Sup Yoon ,  Hyung Seok Lee ,  Jong-Won Lim ,  Sungjae Chang ,  Hyunwook Jung ,  Kyu Jun Cho ,  Dong Min Kang ,  Dong-Young Kim ,  Seong-Il Kim ,  Sang-Heung Lee ,  Jongmin Lee ,  Hong Gu Ji

IPC: H01L29/78 ,  H01L29/45 ,  H01L29/778 ,  H01L29/66 ,  H01L21/3065 ,  H01L29/417 ,  H01L29/06 ,  H01L29/20 ,  H01L29/423

Abstract: Provided is a semiconductor device including a substrate in which an insulation layer is disposed between a first semiconductor layer and a second semiconductor layer, a through-hole penetrating through the substrate, the through-hole having a first hole penetrating through the first semiconductor layer and a second hole penetrating through the insulation layer and the second semiconductor layer from a bottom surface of the first hole, an epi-layer disposed inside the through-hole, a drain electrode disposed inside the second hole and contacting one surface of the epi-layer, and a source electrode and a gate electrode which are disposed on the other surface of the epi-layer.