Abstract:
A method of fabricating synthetic diamond material using a microwave plasma activated chemical vapour deposition technique is provided which utilizes high and uniform microwave power densities applied over large areas and for extended periods of time. Products fabricated using such a synthesis technique are described including a single crystal CVD diamond layer which has a large area and a low nitrogen concentration, and a high purity, fast growth rate single crystal CVD diamond material.
Abstract:
A synthetic diamond plate comprising a polygonal plate formed of synthetic diamond material, the polygonal plate of synthetic diamond material having a thickness in a range 0.4 mm to 1. mm, and rounded corners having a radius of curvature in a range 1 mm to 6 mm. A mounted synthetic diamond plate is also disclosed comprising a polygonal synthetic diamond plate as described and a base to which the polygonal synthetic diamond plate is bonded, wherein the base comprises a cooling channel. An array of mounted synthetic diamond plates is also described, comprising a plurality of mounted synthetic diamond plates described above, wherein the cooling channels of the mounted synthetic diamond plates are linked to form a common cooling channel across the array of mounted synthetic diamond plates.
Abstract:
A method of fabricating synthetic diamond material using a microwave plasma activated chemical vapour deposition technique is provided which utilizes high and uniform microwave power densities applied over large areas and for extended periods of time. Products fabricated using such a synthesis technique are described including a single crystal CVD diamond layer which has a large area and a low nitrogen concentration, and a high purity, fast growth rate single crystal CVD diamond material.