公开(公告)号：US20200088482A1

公开(公告)日：2020-03-19

申请号：US16471328

申请日：2017-12-15

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： JOSEPH MICHAEL DODSON

IPC: F28F21/02 ,  G02B5/08 ,  H01S3/04 ,  H01S3/06

Abstract: A heat sink comprising a heat spreader (2) made from synthetic diamond and having a front surface for mounting one or more components to be cooled like a laser disc (8) and a rear surface for direct fluid cooling (10). A plurality of ribs (4,7) is bonded to the rear surface of the heat spreader (2) to stiffen the heat spreader. Both the heat spreader and the plurality of ribs are formed of synthetic diamond material. The ribs (4,7) may be fixed to the heat spreader by braze bonds (6).

公开(公告)号：US20210206647A1

公开(公告)日：2021-07-08

申请号：US17055405

申请日：2019-05-14

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： GRUFFUDD TREFOR WILLIAMS ,  RICHARD STUART BALMER ,  JOSEPH MICHAEL DODSON

IPC: C01B32/26 ,  C23C16/27 ,  C23C16/52 ,  C23C16/511 ,  C01B32/25

Abstract: A polycrystalline CVD synthetic diamond material is provided that has an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of between 1700 and 2400 Wm−1K−1, a thickness of at least 2.5 mm and a visible transmittance through the thickness of the polycrystalline CVD synthetic diamond of at least 25%. A wafer comprising the material is also provided, wherein at least 70% of a total area of the wafer has the properties of the polycrystalline CVD synthetic diamond material. A method for fabricating the wafer is also disclosed.

公开(公告)号：US20190318917A1

公开(公告)日：2019-10-17

申请号：US16457138

申请日：2019-06-28

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： JOHN ROBERT BRANDON ,  ALEXANDER LAMB CULLEN ,  STEPHEN DAVID WILLIAMS ,  JOSEPH MICHAEL DODSON ,  JONATHAN JAMES WILMAN ,  CHRISTOPHER JOHN HOWARD WORT ,  HELEN WILMAN

IPC: H01J37/32 ,  C23C16/27 ,  C23C16/511

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TM011 resonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.