-
公开(公告)号:US20220389611A1
公开(公告)日:2022-12-08
申请号:US17770918
申请日:2020-12-15
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: GRUFFUDD TREFOR WILLIAMS , CHRISTOPHER JOHN HOWARD WORT
Abstract: A method of fabricating a CVD synthetic diamond material, the method comprising providing a compacted diamond carrier material consisting of compacted non-intergrown diamond particles substantially free of a second phase, and growing CVD synthetic diamond material on a surface of the compacted diamond carrier material. Composite diamond bodies made by the method are also described.
-
公开(公告)号:US20180266013A1
公开(公告)日:2018-09-20
申请号:US15762486
申请日:2016-09-14
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Abstract: A method of fabricating a plurality of single crystal CVD diamonds, the method comprising: coating a carrier substrate with a layer of polycrystalline CVD diamond material; bonding a plurality of single crystal diamond substrates to the layer of polycrystalline CVD diamond material on the carrier substrate; growing single crystal CVD diamond material on the plurality of single crystal diamond substrates to form a plurality of single crystal CVD diamonds; and separating the plurality of single crystal CVD diamonds from the layer of polycrystalline CVD diamond material on the carrier substrate and any polycrystalline CVD diamond material which has grown between the plurality of single crystal CVD diamonds to yield a plurality of individual single crystal CVD diamonds.
-
公开(公告)号:US20190318917A1
公开(公告)日:2019-10-17
申请号:US16457138
申请日:2019-06-28
Applicant: ELEMENT SIX TECHNOLOGIES LIMITED
Inventor: JOHN ROBERT BRANDON , ALEXANDER LAMB CULLEN , STEPHEN DAVID WILLIAMS , JOSEPH MICHAEL DODSON , JONATHAN JAMES WILMAN , CHRISTOPHER JOHN HOWARD WORT , HELEN WILMAN
IPC: H01J37/32 , C23C16/27 , C23C16/511
Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TM011 resonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.
-
-