公开(公告)号：US20220389611A1

公开(公告)日：2022-12-08

申请号：US17770918

申请日：2020-12-15

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： GRUFFUDD TREFOR WILLIAMS ,  CHRISTOPHER JOHN HOWARD WORT

IPC: C30B29/04 ,  C30B25/20 ,  C23C16/27

Abstract: A method of fabricating a CVD synthetic diamond material, the method comprising providing a compacted diamond carrier material consisting of compacted non-intergrown diamond particles substantially free of a second phase, and growing CVD synthetic diamond material on a surface of the compacted diamond carrier material. Composite diamond bodies made by the method are also described.

公开(公告)号：US20210206647A1

公开(公告)日：2021-07-08

申请号：US17055405

申请日：2019-05-14

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： GRUFFUDD TREFOR WILLIAMS ,  RICHARD STUART BALMER ,  JOSEPH MICHAEL DODSON

IPC: C01B32/26 ,  C23C16/27 ,  C23C16/52 ,  C23C16/511 ,  C01B32/25

Abstract: A polycrystalline CVD synthetic diamond material is provided that has an average thermal conductivity at room temperature through a thickness of the polycrystalline CVD synthetic diamond material of between 1700 and 2400 Wm−1K−1, a thickness of at least 2.5 mm and a visible transmittance through the thickness of the polycrystalline CVD synthetic diamond of at least 25%. A wafer comprising the material is also provided, wherein at least 70% of a total area of the wafer has the properties of the polycrystalline CVD synthetic diamond material. A method for fabricating the wafer is also disclosed.