公开(公告)号：US20220089952A1

公开(公告)日：2022-03-24

申请号：US17446414

申请日：2021-08-30

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Sung Jun HONG ,  Myung Ho LEE ,  Myung Geun SONG ,  Hoon Sik KIM ,  Jae Jung KO ,  Myong Euy LEE ,  Jun Hyeok HWANG

IPC: C09K13/06 ,  C23F1/02 ,  C23F1/44 ,  H01L21/3213

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

公开(公告)号：US20190390110A1

公开(公告)日：2019-12-26

申请号：US16416089

申请日：2019-05-17

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Du Won LEE ,  Jang Woo CHO ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/06 ,  H01L21/311 ,  C09K13/08

Abstract: Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.

公开(公告)号：US20200071614A1

公开(公告)日：2020-03-05

申请号：US16557680

申请日：2019-08-30

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Jang Woo CHO ,  Tae Ho KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/06 ,  H01L21/311

Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.

公开(公告)号：US20190382659A1

公开(公告)日：2019-12-19

申请号：US16435315

申请日：2019-06-07

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Du Won LEE ,  Jang Woo CHO ,  Myung Ho LEE

IPC: C09K13/06 ,  H01L21/311 ,  C08G77/28 ,  C08G77/26 ,  C08G77/30 ,  C08G77/04 ,  C09K13/08

Abstract: Provided are a polysiloxane-based compound, a selective etching composition with respect to a silicon nitride layer including the polysiloxane-based compound, and a method of manufacturing a semiconductor device including the etching composition. The silicon nitride layer etching composition including the polysiloxane-based compound may selectively etch the silicon nitride layer relative to a silicon oxide layer, and have a significantly excellent etch selectivity ratio, and a small change in etch rate and a small change in etch selectivity ratio with respect to the silicon nitride layer even when time for using the composition increases or the composition is repeatedly used.

公开(公告)号：US20220089953A1

公开(公告)日：2022-03-24

申请号：US17446435

申请日：2021-08-30

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Sung Jun HONG ,  Myung Ho LEE ,  Myung Geun SONG ,  Hoon Sik KIM ,  Jae Jung KO ,  Myong Euy LEE

IPC: C09K13/06 ,  H01L21/311

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

公开(公告)号：US20220089951A1

公开(公告)日：2022-03-24

申请号：US17446408

申请日：2021-08-30

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Sung Jun HONG ,  Myung Ho LEE ,  Myung Geun SONG ,  Hoon Sik KIM ,  Jae Jung KO ,  Myong Euy LEE ,  Jun Hyeok HWANG

IPC: C09K13/06 ,  H01L21/311

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be highly selectively etched as compared with a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.