公开(公告)号：US20230212457A1

公开(公告)日：2023-07-06

申请号：US18077499

申请日：2022-12-08

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jeong Sik OH ,  Tae Ho KIM ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08 ,  H01L21/311

CPC classification number: C09K13/08 ,  H01L21/31111

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

公开(公告)号：US20200071614A1

公开(公告)日：2020-03-05

申请号：US16557680

申请日：2019-08-30

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun KIM ,  Hyeon Woo PARK ,  Jang Woo CHO ,  Tae Ho KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/06 ,  H01L21/311

Abstract: Provided are a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition, capable of etching the silicon nitride layer at a high selectivity ratio relative to a silicon oxide layer by comprising a polysilicon compound in the etching composition, an etching method of a silicon nitride layer using the same, and a method of manufacturing a semiconductor device.

公开(公告)号：US20220403243A1

公开(公告)日：2022-12-22

申请号：US17739489

申请日：2022-05-09

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jeong Sik OH ,  Tae Ho KIM ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08

Abstract: The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.
The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

公开(公告)号：US20220380670A1

公开(公告)日：2022-12-01

申请号：US17737636

申请日：2022-05-05

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Tae Ho KIM ,  Jeong Sik OH ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08 ,  C07F7/08 ,  C01B33/20

Abstract: The present invention relates to a silicon etching composition, and to a composition for selectively etching silicon with respect to a silicon insulating film.
The etching composition according to the present invention can improve the selective etching ratio of silicon from the surface of the semiconductor on which a silicone oxide film and silicon are exposed.

公开(公告)号：US20230086417A1

公开(公告)日：2023-03-23

申请号：US17871094

申请日：2022-07-22

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Jeong Sik OH ,  Tae Ho KIM ,  Gi Young KIM ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C11D1/00 ,  C11D11/00 ,  C11D3/43 ,  C11D3/18

Abstract: The present invention relates to a composition for treating a semiconductor substrate, and particularly to a composition for treating an edge portion of a wafer coated with polysilazane.
According to the composition for treating a semiconductor substrate according to the present invention, it is possible to uniformly maintain the quality of the composition in terms of management and to uniformly treat the boundary of the wafer in terms of processing. In addition, by improving the straightness of the boundary portion where polysilazane is removed, it is possible to significantly reduce the defect rate of the product and to stably improve the productivity yield.

公开(公告)号：US20230092160A1

公开(公告)日：2023-03-23

申请号：US17903104

申请日：2022-09-06

Applicant: ENF TECHNOLOGY CO., LTD. ,  SK hynix Inc.

Inventor： Jeong Sik OH ,  Tae Ho KIM ,  Gi young KIM ,  Myung Ho LEE ,  Myung Geun SONG ,  Pilgu KANG ,  Youngmee KANG ,  Eunseok OH

IPC: C09K13/08 ,  H01L21/306

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.

公开(公告)号：US20230076065A1

公开(公告)日：2023-03-09

申请号：US17894516

申请日：2022-08-24

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Gi Young KIM ,  Tae Ho KIM ,  Jeong Sik OH ,  Myung Ho LEE ,  Myung Geun SONG

IPC: C09K13/08

Abstract: The present invention relates to a composition for selectively etching silicon on a surface on which a metal film and silicon (Si) are exposed.
According to the present invention, it is possible to improve etch selectivity of silicon on the semiconductor surface on which the metal film and silicon are exposed.