公开(公告)号：US11220659B2

公开(公告)日：2022-01-11

申请号：US16555183

申请日：2019-08-29

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Du Won Lee ,  Sang Dae Lee ,  Myung Ho Lee ,  Myung Geun Song

IPC: C11D7/50 ,  G03F7/42 ,  H01L21/027 ,  C11D11/00

Abstract: A thinner composition is capable of reducing the amount of photoresist used in a reducing resist consumption (RRC) coating process, an edge bead removed (EBR) process or the like, and removing unnecessary photoresist on an edge portion or a backside portion of the wafer. The thinner composition includes C1-C10 alkyl C1-C10 alkoxy propionate, propylene glycol C1-C10 alkyl ether, and propylene glycol C1-C10 alkyl ether acetate.

公开(公告)号：US11149201B2

公开(公告)日：2021-10-19

申请号：US16416089

申请日：2019-05-17

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun Kim ,  Hyeon Woo Park ,  Du Won Lee ,  Jang Woo Cho ,  Myung Ho Lee ,  Myung Geun Song

IPC: C09K13/06 ,  H01L21/311 ,  C09K13/08

Abstract: Provided is a silicon nitride layer etching composition, and more specifically, a silicon nitride layer etching composition including two different silicon-based compounds in an etching composition to be capable of selectively etching a silicon nitride layer relative to a silicon oxide layer with a remarkable etch selectivity ratio and providing remarkable effects of suppressing generation of precipitates and reducing the abnormal growth of other layers existing in the vicinity, including the silicon oxide layer when the silicon nitride layer etching composition is used for an etching process and a semiconductor manufacturing process.

公开(公告)号：US10920142B2

公开(公告)日：2021-02-16

申请号：US16435315

申请日：2019-06-07

Applicant: ENF TECHNOLOGY CO., LTD.

Inventor： Dong Hyun Kim ,  Hyeon Woo Park ,  Du Won Lee ,  Jang Woo Cho ,  Myung Ho Lee

IPC: C09K13/06 ,  H01L21/311 ,  C08G77/28 ,  C09K13/08 ,  C08G77/30 ,  C08G77/04 ,  C08G77/26

Abstract: Provided are a polysiloxane-based compound, a selective etching composition with respect to a silicon nitride layer including the polysiloxane-based compound, and a method of manufacturing a semiconductor device including the etching composition. The silicon nitride layer etching composition including the polysiloxane-based compound may selectively etch the silicon nitride layer relative to a silicon oxide layer, and have a significantly excellent etch selectivity ratio, and a small change in etch rate and a small change in etch selectivity ratio with respect to the silicon nitride layer even when time for using the composition increases or the composition is repeatedly used.