公开(公告)号：US12012540B2

公开(公告)日：2024-06-18

申请号：US17749868

申请日：2022-05-20

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes ,  Juhee Yeo

IPC: C09K13/06 ,  B81C1/00 ,  C09K13/04 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/06 ,  B81C1/00539 ,  C09K13/04 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/32134

Abstract: The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.

公开(公告)号：US20230365863A1

公开(公告)日：2023-11-16

申请号：US18144502

申请日：2023-05-08

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes

IPC: C09K13/06 ,  H01L21/311

CPC classification number: C09K13/06 ,  H01L21/31111

Abstract: Provided are compositions and methods for the wet etching of a surface of a microelectronic device substrate which contains surfaces comprising silicon nitride, silicon oxide, and polysilicon. The method of the invention involves a passivation step and a silicon nitride etching step, as more fully described below. The combination of the two steps was found to greatly improve the selectivity of the silicon nitride etching operation in the presence of polysilicon.

公开(公告)号：US20240150653A1

公开(公告)日：2024-05-09

申请号：US18376226

申请日：2023-10-03

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes

IPC: C09K13/06

CPC classification number: C09K13/06

Abstract: Etchant compositions for selective etching of silicon nitride in the presence of silicon oxide and polysilicon are provided. The etchant compositions may achieve passivation of at least one of silicon oxide, polysilicon, or any combination thereof, while selectively etching silicon nitride, in a single step by applying the etchant composition to a substrate. The etchant compositions may comprise at least 60% by weight of phosphoric acid based on a total weight of the etchant composition; at least 1% by weight of water based on the total weight of the etchant composition; and no greater than 2% by weight of a metal oxidizer based on the total weight of the etchant composition.

公开(公告)号：US20220389314A1

公开(公告)日：2022-12-08

申请号：US17749868

申请日：2022-05-20

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Claudia Yevenes ,  Juhee Yeo

IPC: C09K13/06 ,  H01L21/306

Abstract: The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.