公开(公告)号：US20220389314A1

公开(公告)日：2022-12-08

申请号：US17749868

申请日：2022-05-20

申请人： ENTEGRIS, INC.

发明人： Steven M. Bilodeau ,  Claudia Yevenes ,  Juhee Yeo

IPC分类号： C09K13/06 ,  H01L21/306

摘要： The invention relates to compositions and methods for the selective wet etching of a surface of a microelectronic device that contains both silicon nitride (SiN) and polysilicon. An etching composition as described comprises phosphoric acid, certain polysilicon corrosion inhibitors, along with certain silanes. The combination of the two components was found to greatly improve the selectivity of the silicon nitride etching composition in the presence of polysilicon.