公开(公告)号：US10920087B2

公开(公告)日：2021-02-16

申请号：US16098728

申请日：2017-03-27

Applicant: ENTEGRIS, INC.

Inventor： Steven Bishop ,  Sharad N. Yedave ,  Oleg Bly ,  Joseph Sweeney ,  Ying Tang

IPC: C09D1/00 ,  H01J37/08 ,  C01B35/06 ,  H01J37/317 ,  H01J37/32

Abstract: A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.

公开(公告)号：US11299802B2

公开(公告)日：2022-04-12

申请号：US17055885

申请日：2019-03-15

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph Sweeney ,  Sharad N. Yedave

IPC: C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during an ion implantation procedure.

公开(公告)号：US20190136069A1

公开(公告)日：2019-05-09

申请号：US16098728

申请日：2017-03-27

Applicant: ENTEGRIS, INC.

Inventor： Steven Bishop ,  Sharad N. Yedave ,  Oleg Bly ,  Joseph Sweeney ,  Ying Tang

IPC: C09D1/00 ,  H01J37/08 ,  H01J37/317

Abstract: A hydrogenated isotopically enriched boron trifluoride (BF3) dopant source gas composition. The composition contains (i) boron trifluoride isotopically enriched above natural abundance in boron of atomic mass 11 (UB), and (ii) hydrogen in an amount of from 2 to 6.99 vol. %, based on total volume of boron trifluoride and hydrogen in the composition. Also described are methods of use of such dopant source gas composition, and associated apparatus therefor.