公开(公告)号：US10892137B2

公开(公告)日：2021-01-12

申请号：US16564965

申请日：2019-09-09

申请人： ENTEGRIS, INC.

发明人： Joseph D. Sweeney ,  Joseph R. Despres ,  Ying Tang ,  Sharad N. Yedave ,  Edward E. Jones ,  Oleg Byl

IPC分类号： H01J37/08 ,  H01J37/317

摘要： An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.

公开(公告)号：US20180211839A1

公开(公告)日：2018-07-26

申请号：US15928645

申请日：2018-03-22

申请人： Entegris, Inc.

发明人： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC分类号： H01L21/265 ,  H01L33/00 ,  H01L31/18 ,  H01J37/08 ,  H01J37/317

CPC分类号： H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01L31/18 ,  H01L33/005

摘要： Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

公开(公告)号：US09960042B2

公开(公告)日：2018-05-01

申请号：US14378963

申请日：2013-02-13

申请人： Entegris, Inc.

发明人： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC分类号： H01L21/425 ,  H01L21/265 ,  H01J37/08 ,  H01J37/317 ,  H01L31/18 ,  H01L33/00

CPC分类号： H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01L31/18 ,  H01L33/005

摘要： Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

公开(公告)号：US09685304B2

公开(公告)日：2017-06-20

申请号：US14861844

申请日：2015-09-22

申请人： Entegris, Inc.

发明人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC分类号： H01J37/317 ,  C01B35/00 ,  C01B35/06 ,  H01L21/265

CPC分类号： H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

公开(公告)号：US20170069499A1

公开(公告)日：2017-03-09

申请号：US15354076

申请日：2016-11-17

申请人： Entegris, Inc.

发明人： Joseph D. Sweeney ,  Oleg Byl ,  Robert Kaim

IPC分类号： H01L21/265 ,  C23C14/48 ,  C23C14/06 ,  H01J37/317

CPC分类号： H01L21/265 ,  C23C14/06 ,  C23C14/0605 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/2236

摘要： A method of implanting carbon ions into a target substrate, including: ionizing a carbon containing dopant material to produce a plasma having ions; optionally co-flowing an additional gas or series of gases with the carbon-containing dopant material; and implanting the ions into the target substrate. The carbon-containing dopant material is of the formula CwFxOyHz wherein if w=1, then x>0 and y and z can take any value, and wherein if w>1 then x or y is >0, and z can take any value. Such method significantly improves the efficiency of an ion implanter tool, in relation to the use of carbon source gases such as carbon monoxide or carbon dioxide.

摘要翻译： 一种将碳离子注入目标衬底的方法，包括：使含碳的掺杂剂材料电离以产生具有离子的等离子体; 任选地将另外的气体或一系列气体与含碳掺杂剂材料共流动; 并将离子注入目标衬底。 含碳掺杂剂材料为CwFxOyHz，其中如果w = 1，则x> 0，y和z可以取任何值，并且其中如果w> 1，则x或y> 0，并且z可以取任何值 。 相对于碳源气体如一氧化碳或二氧化碳的使用，这种方法显着地提高了离子注入机工具的效率。

公开(公告)号：US20160211137A1

公开(公告)日：2016-07-21

申请号：US14912380

申请日：2014-08-14

申请人： ENTEGRIS, INC.

发明人： Ying Tang ,  Joseph D. Sweeney ,  Tianniu Chen ,  James J. Mayer ,  Richard S. Ray ,  Oleg Byl ,  Sharad N. Yedave ,  Robert Kaim

IPC分类号： H01L21/265 ,  H01J37/317

CPC分类号： H01L21/265 ,  H01J37/3171 ,  H01J37/32412 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/26506 ,  H01L21/26546

摘要： Compositions, systems, and methods are described for implanting silicon and/or silicon ions in a substrate, involving generation of silicon and/or silicon ions from corresponding silicon precursor compositions, and implantation of the silicon and/or silicon ions in the substrate.

摘要翻译： 描述了用于在衬底中注入硅和/或硅离子的组合物，系统和方法，包括从相应的硅前体组合物产生硅和/或硅离子，以及在衬底中注入硅和/或硅离子。

公开(公告)号：US20160085246A1

公开(公告)日：2016-03-24

申请号：US14891352

申请日：2014-05-15

申请人： Entegris, Inc.

发明人： Oleg Byl ,  Joseph D. Sweeney

IPC分类号： G05D11/13 ,  F25J3/02

CPC分类号： G05D11/133 ,  F17C2221/03 ,  F17C2223/035 ,  F17C2225/035 ,  F17C2227/04 ,  F17C2270/0518 ,  F25J3/0252 ,  G05D11/134 ,  G05D11/135 ,  G05D11/139 ,  Y02E60/324

摘要： Methods are described for filling gas mixture supply vessels with constituent gases to achieve precision compositions of the gas mixture, wherein the gas mixture comprises at least two constituent gases. Cascading fill techniques may be employed, involving flowing of gases from single source vessels to multiple target vessels, or from multiple source vessels to a single target vessel. The methods may be employed to form dopant gas mixtures, e.g., of boron trifluoride and hydrogen, for ion implantation applications.

摘要翻译： 描述了用于将气体混合物供应容器与构成气体填充以实现气体混合物的精密组成的方法，其中气体混合物包括至少两种构成气体。 可以采用级联填充技术，包括将气体从单一源血管流动到多个靶血管，或从多个源血管流到单个靶血管。 可以采用这些方法来形成用于离子注入应用的掺杂剂气体混合物，例如三氟化硼和氢气。

公开(公告)号：US20160020102A1

公开(公告)日：2016-01-21

申请号：US14378963

申请日：2013-02-13

申请人： Entegris, Inc

发明人： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC分类号： H01L21/265 ,  H01L33/00 ,  H01J37/317 ,  H01L31/18

CPC分类号： H01L21/265 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/022 ,  H01L31/18 ,  H01L33/005

摘要： Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

摘要翻译： 描述了离子注入工艺和系统，其中使用碳掺杂剂源材料来实现碳掺杂。 描述了各种气体混合物，包括碳掺杂剂源材料，以及用于这种碳掺杂的气体的共流组合。 描述了在碳掺杂剂源材料中提供原位清洁剂，以及碳掺杂剂源气体，氢化物气体，氟化物气体，惰性气体，氧化物气体和其它气体的特定组合。

公开(公告)号：US11827973B2

公开(公告)日：2023-11-28

申请号：US17688613

申请日：2022-03-07

申请人： ENTEGRIS, INC.

发明人： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Sharad N. Yedave

IPC分类号： C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

CPC分类号： C23C14/48 ,  C23C14/564 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022

摘要： The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.

公开(公告)号：US11621148B2

公开(公告)日：2023-04-04

申请号：US17024261

申请日：2020-09-17

申请人： ENTEGRIS, INC.

发明人： Ying Tang ,  Bryan C. Hendrix ,  Oleg Byl ,  Sharad N. Yedave

IPC分类号： H01J37/32 ,  C23C14/48 ,  C23C14/06

摘要： Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.