公开(公告)号：US20220363990A1

公开(公告)日：2022-11-17

申请号：US17743080

申请日：2022-05-12

Applicant: ENTEGRIS, INC.

Inventor： Hsing-Chen Wu ,  Min-Chieh Yang ,  Ming-Chi Liao ,  Wen Hua Tai ,  Wei-Ling Lan

IPC: C09K13/06 ,  H01L21/306

Abstract: The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.

公开(公告)号：US12129418B2

公开(公告)日：2024-10-29

申请号：US17743080

申请日：2022-05-12

Applicant: ENTEGRIS, INC.

Inventor： Hsing-Chen Wu ,  Min-Chieh Yang ,  Ming-Chi Liao ,  Wen Hua Tai ,  Wei-Ling Lan

IPC: C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  H01L21/02 ,  H01L21/306 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  H01L21/0217 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31105 ,  H01L21/32134

Abstract: The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.