公开(公告)号：US11374146B2

公开(公告)日：2022-06-28

申请号：US16875354

申请日：2020-05-15

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Yuan-Ting Lin

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/62 ,  H01L33/30 ,  H01L33/10

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.

公开(公告)号：US12136683B2

公开(公告)日：2024-11-05

申请号：US18213304

申请日：2023-06-23

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Yuan-Ting Lin

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/10 ,  H01L33/30 ,  H01L33/62

Abstract: A semiconductor device is provided, which includes an active structure, a first semiconductor layer, a second semiconductor layer, an intermediate layer, a transition layer and a contact layer. The active structure has two sides and includes an active region. The first semiconductor layer and the second semiconductor layer respectively located on the two sides of the active structure. The intermediate layer is located between the second semiconductor layer and the active structure. The transition layer is located on the second semiconductor layer. The contact layer is located on the transition layer.

公开(公告)号：US11728456B2

公开(公告)日：2023-08-15

申请号：US17750232

申请日：2022-05-20

Applicant: EPISTAR CORPORATION

Inventor： Meng-Yang Chen ,  Yuan-Ting Lin

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/62 ,  H01L33/30 ,  H01L33/10

CPC classification number: H01L33/002 ,  H01L33/04 ,  H01L33/10 ,  H01L33/305 ,  H01L33/62

Abstract: A semiconductor device is provided, which includes an active structure and a first semiconductor layer. The active structure includes an active region having a topmost surface and a bottommost surface, and a first dopant distributing from the topmost surface to the bottommost surface. The first semiconductor layer is located under the active structure and includes a second dopant. The active region includes a semiconductor material including As.