公开(公告)号：US20160049473A1

公开(公告)日：2016-02-18

申请号：US14459006

申请日：2014-08-13

申请人： ERIC J. STEWART ,  HOWELL GEORGE HENRY ,  ROBERT S. HOWELL ,  MATTHEW RUSSELL KING ,  JUSTIN ANDREW PARKE ,  BETTINA NECHAY ,  HARLAN CARL CRAMER

发明人： ERIC J. STEWART ,  HOWELL GEORGE HENRY ,  ROBERT S. HOWELL ,  MATTHEW RUSSELL KING ,  JUSTIN ANDREW PARKE ,  BETTINA NECHAY ,  HARLAN CARL CRAMER

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/205 ,  H01L29/20 ,  H01L29/778 ,  H01L29/66

CPC分类号： H01L29/42316 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783

摘要： A device is provided that comprises a first pillar disposed in a first region and overlying a base structure, and a second pillar disposed in a second region and overlying the base structure and being spaced apart from the first pillar by a device region. A bridge is disposed in the device region with a first end connected to the first pillar and a second end connected to the second pillar. The bridge includes a top, sides, and a bottom. The bridge is formed from one or more heterostructures with an undercut opening extending from the bottom to an underlying structure. A four-sided conductive contact wraps around and substantially surrounds the bridge around its top, its sides, and its bottom along at least a portion of its length between the first and second end.

公开(公告)号：US20200013775A1

公开(公告)日：2020-01-09

申请号：US16577629

申请日：2019-09-20

申请人： JUSTIN ANDREW PARKE ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  HOWELL GEORGE HENRY ,  BETTINA NECHAY ,  HARLAN CARL CRAMER ,  MATTHEW RUSSELL KING ,  SHALINI GUPTA ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

发明人： JUSTIN ANDREW PARKE ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  HOWELL GEORGE HENRY ,  BETTINA NECHAY ,  HARLAN CARL CRAMER ,  MATTHEW RUSSELL KING ,  SHALINI GUPTA ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

IPC分类号： H01L27/088 ,  H01L21/8252 ,  H01L21/308

摘要： A method of forming an integrated circuit can include forming a heterostructure over a substrate structure, wherein the given substrate structure comprises a given semiconductor material. The method can include etching a castellated channel region in an e-mode device area of the heterostructure that defines a plurality of ridge channels interleaved between a plurality of trenches, the ridge channels comprising another semiconductor material. The method can also include forming an isolation region on the heterostructure to electrically isolate the e-mode device area from a d-mode device area of the heterostructure. The method can further include forming a mask with an opening that defines a castellated gate opening overlying the castellated channel region and the mask defines an opening overlaying a single planar gate overlying the d-mode device area of the heterostructure. The method can also include performing a contact fill with conductive material to form a castellated gate contact.

公开(公告)号：US20160104703A1

公开(公告)日：2016-04-14

申请号：US14509750

申请日：2014-10-08

申请人： JUSTIN ANDREW PARKE ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  HOWELL GEORGE HENRY ,  BETTINA NECHAY ,  HARLAN CARL CRAMER ,  MATTHEW RUSSELL KING ,  SHALINI GUPTA ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

发明人： JUSTIN ANDREW PARKE ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  HOWELL GEORGE HENRY ,  BETTINA NECHAY ,  HARLAN CARL CRAMER ,  MATTHEW RUSSELL KING ,  SHALINI GUPTA ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

IPC分类号： H01L27/088 ,  H01L29/201 ,  H01L29/205 ,  H01L29/06 ,  H01L21/02 ,  H01L21/8236 ,  H01L21/306 ,  H01L21/8234 ,  H01L21/308 ,  H01L29/20 ,  H01L21/8252

CPC分类号： H01L27/0883 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7786

摘要： A circuit is provided that includes a castellated channel device that comprises a heterostructure overlying a substrate structure, a castellated channel device area formed in the heterostructure that defines a plurality of ridge channels interleaved between a plurality of trenches, and a three-sided castellated conductive gate contact that extends across the castellated channel device area. The three-sided gate contact substantially surrounds each ridge channel around their tops and their sides to overlap a channel interface of heterostructure of each of the plurality of ridge channels. The three-sided castellated conductive gate contact extends along at least a portion of a length of each ridge channel.

摘要翻译： 提供一种电路，该电路包括一个包含覆盖衬底结构的异质结构的cast形沟道器件，形成在该异质结构中的界定沟道器件区域，该区域限定了多个沟槽之间交错的多个脊通道，以及一个三面雉ated的导电栅极 接触延伸穿过城堡通道设备区域。 三面门接触件基本上围绕其顶部及其侧面的每个脊通道覆盖多个脊通道中的每一个的异质结构的通道界面。 三边形的导电栅极接触沿每个脊通道的长度的至少一部分延伸。

公开(公告)号：US20160190267A1

公开(公告)日：2016-06-30

申请号：US15065298

申请日：2016-03-09

申请人： ERIC J. STEWART ,  HOWELL GEORGE HENRY ,  ROBERT S. HOWELL ,  MATTHEW RUSSELL KING ,  JUSTIN ANDREW PARKE ,  BETTINA NECHAY ,  HARLAN CARL CRAMER ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

发明人： ERIC J. STEWART ,  HOWELL GEORGE HENRY ,  ROBERT S. HOWELL ,  MATTHEW RUSSELL KING ,  JUSTIN ANDREW PARKE ,  BETTINA NECHAY ,  HARLAN CARL CRAMER ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

IPC分类号： H01L29/423 ,  H01L29/20 ,  H01L29/778 ,  H01L29/06

CPC分类号： H01L29/42316 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783

摘要： A device is provided that comprises a first pillar disposed in a first region and overlying a base structure, and a second pillar disposed in a second region and overlying the base structure and being spaced apart from the first pillar by a device region. A bridge is disposed in the device region with a first end connected to the first pillar and a second end connected to the second pillar. The bridge includes a top, sides, and a bottom. The bridge is formed from one or more heterostructures with an undercut opening extending from the bottom to an underlying structure. A four-sided conductive contact wraps around and substantially surrounds the bridge around its top, its sides, and its bottom along at least a portion of its length between the first and second end.

摘要翻译： 提供了一种装置，其包括设置在第一区域中并覆盖基部结构的第一柱体，以及设置在第二区域中并且覆盖基部结构并与设备区域与第一柱体间隔开的第二柱体。 桥接器设置在设备区域中，第一端连接到第一柱，第二端连接到第二柱。 桥梁包括顶部，侧面和底部。 该桥由一个或多个异质结构形成，具有从底部延伸到下面的结构的底切开口。 四面导电接触围绕其顶部，其侧面及其底部沿其长度的至少一部分在第一和第二端之间围绕并基本上围绕桥。

公开(公告)号：US20160126340A1

公开(公告)日：2016-05-05

申请号：US14533752

申请日：2014-11-05

申请人： BETTINA A. NECHAY ,  SHALINI GUPTA ,  MATTHEW RUSSELL KING ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  JUSTIN ANDREW PARKE ,  HARLAN CARL CRAMER ,  HOWELL GEORGE HENRY ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

发明人： BETTINA A. NECHAY ,  SHALINI GUPTA ,  MATTHEW RUSSELL KING ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  JUSTIN ANDREW PARKE ,  HARLAN CARL CRAMER ,  HOWELL GEORGE HENRY ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

IPC分类号： H01L29/778 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7785 ,  H01L21/3065 ,  H01L29/0657 ,  H01L29/1029 ,  H01L29/1058 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

摘要： A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.

摘要翻译： 提供了一种晶体管器件，其包括基底结构和覆盖在基底结构上的超晶格结构，并且包括具有倾斜侧壁的多通道脊。 多通道脊包括多个异质结构，每个异质结构形成多通道脊的通道，其中至少一个异质结构的参数相对于多个异质结构中的其它异质结构而变化。 晶体管器件还包括三边形栅极接触，其沿着其深度的至少一部分包围并基本上围绕多通道脊的顶部和侧面。

公开(公告)号：US20170288045A1

公开(公告)日：2017-10-05

申请号：US15624445

申请日：2017-06-15

申请人： BETTINA A. NECHAY ,  SHALINI GUPTA ,  MATTHEW RUSSELL KING ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  JUSTIN ANDREW PARKE ,  HARLAN CARL CRAMER ,  HOWELL GEORGE HENRY ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

发明人： BETTINA A. NECHAY ,  SHALINI GUPTA ,  MATTHEW RUSSELL KING ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  JUSTIN ANDREW PARKE ,  HARLAN CARL CRAMER ,  HOWELL GEORGE HENRY ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/205 ,  H01L29/15 ,  H01L29/20

CPC分类号： H01L29/7785 ,  H01L21/3065 ,  H01L29/0657 ,  H01L29/1029 ,  H01L29/1058 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

摘要： A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.

公开(公告)号：US20160315152A1

公开(公告)日：2016-10-27

申请号：US15186193

申请日：2016-06-17

申请人： KAREN M. RENALDO ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  HOWELL GEORGE HENRY ,  HARLAN CARL CRAMER ,  JUSTIN ANDREW PARKE ,  MATTHEW RUSSELL KING

发明人： KAREN M. RENALDO ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  HOWELL GEORGE HENRY ,  HARLAN CARL CRAMER ,  JUSTIN ANDREW PARKE ,  MATTHEW RUSSELL KING

IPC分类号： H01L29/15 ,  H01L29/06 ,  H01L29/66 ,  H01L29/205 ,  H01L29/417 ,  H01L21/3065 ,  H01L21/768 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L29/155 ,  H01L21/0254 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/7605 ,  H01L21/76224 ,  H01L21/76877 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/518 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

摘要： An integrated circuit is disclosed that includes a single channel device having a first portion of a single shared heterostructure overlying a substrate structure in a single channel device area, and a gate contact that is in contact with the first portion of the single shared heterostructure. The integrated circuit also includes a multichannel device comprising a second portion of the single shared heterostructure overlying the substrate structure in a multichannel device area, a barrier layer overlying the second portion of the single shared heterorstructure, and a superlattice structure overlying the barrier layer, the superlattice structure comprising a plurality of heterostructures. An isolation region in the single shared heterostructure electrical isolates the single channel device from the multichannel device.

摘要翻译： 公开了一种集成电路，其包括具有在单通道器件区域中覆盖衬底结构的单个共享异质结构的第一部分的单通道器件，以及与单个共用异质结构的第一部分接触的栅极接触。 集成电路还包括多通道器件，其包括覆盖多通道器件区域中的衬底结构的单个共享异质结构的第二部分，覆盖在单个共享异质结构的第二部分上的阻挡层，以及覆盖在阻挡层上的超晶格结构， 超晶格结构包括多个异质结构。 单个共享异质结构中的隔离区域将单通道器件与多通道器件隔离。

公开(公告)号：US20160049504A1

公开(公告)日：2016-02-18

申请号：US14458906

申请日：2014-08-13

申请人： KAREN M. RENALDO ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  HOWELL GEORGE HENRY ,  HARLAN CARL CRAMER ,  JUSTIN ANDREW PARKE ,  MATTHEW RUSSELL KING

发明人： KAREN M. RENALDO ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  HOWELL GEORGE HENRY ,  HARLAN CARL CRAMER ,  JUSTIN ANDREW PARKE ,  MATTHEW RUSSELL KING

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L29/06 ,  H01L21/302 ,  H01L21/02 ,  H01L21/76

CPC分类号： H01L29/155 ,  H01L21/0254 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/7605 ,  H01L21/76224 ,  H01L21/76877 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/085 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/518 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

摘要： An integrated circuit is disclosed that includes a single channel device having a first portion of a single shared heterostructure overlying a substrate structure in a single channel device area, and a gate contact that is in contact with the first portion of the single shared heterostructure. The integrated circuit also includes a multichannel device comprising a second portion of the single shared heterostructure overlying the substrate structure in a multichannel device area, a barrier layer overlying the second portion of the single shared heterostructure, and a superlattice structure overlying the barrier layer, the superlattice structure comprising a plurality of heterostructures. An isolation region in the single shared heterostructure electrical isolates the single channel device from the multichannel device.

摘要翻译： 公开了一种集成电路，其包括具有在单通道器件区域中覆盖衬底结构的单个共享异质结构的第一部分的单通道器件，以及与单个共用异质结构的第一部分接触的栅极接触。 集成电路还包括多通道器件，其包括覆盖多通道器件区域中的衬底结构的单个共享异质结构的第二部分，覆盖在单个共用异质结构的第二部分上的阻挡层，以及覆盖在阻挡层上的超晶格结构， 超晶格结构包括多个异质结构。 单个共享异质结构中的隔离区域将单通道器件与多通道器件隔离。

公开(公告)号：US20160336425A1

公开(公告)日：2016-11-17

申请号：US15222039

申请日：2016-07-28

申请人： BETTINA A. NECHAY ,  SHALINI GUPTA ,  MATTHEW RUSSELL KING ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  JUSTIN ANDREW PARKE ,  HARLAN CARL CRAMER ,  HOWELL GEORGE HENRY ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

发明人： BETTINA A. NECHAY ,  SHALINI GUPTA ,  MATTHEW RUSSELL KING ,  ERIC J. STEWART ,  ROBERT S. HOWELL ,  JUSTIN ANDREW PARKE ,  HARLAN CARL CRAMER ,  HOWELL GEORGE HENRY ,  RONALD G. FREITAG ,  KAREN MARIE RENALDO

IPC分类号： H01L29/66 ,  H01L29/205 ,  H01L21/3065 ,  H01L29/10

CPC分类号： H01L29/7785 ,  H01L21/3065 ,  H01L29/0657 ,  H01L29/1029 ,  H01L29/1058 ,  H01L29/157 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7783

摘要： A transistor device is provided that comprises a base structure, and a superlattice structure overlying the base structure and comprising a multichannel ridge having sloping sidewalls. The multichannel ridge comprises a plurality of heterostructures that each form a channel of the multichannel ridge, wherein a parameter of at least one of the heterostructures is varied relative to other heterostructures of the plurality of heterostructures. The transistor device further comprises a three-sided gate contact that wraps around and substantially surrounds the top and sides of the multichannel ridge along at least a portion of its depth.

公开(公告)号：US20200235202A1

公开(公告)日：2020-07-23

申请号：US16252952

申请日：2019-01-21

申请人： JOSEPHINE BEA CHANG ,  ERIC J. STEWART ,  KEN ALFRED NAGAMATSU ,  ROBERT S. HOWELL ,  SHALINI GUPTA

发明人： JOSEPHINE BEA CHANG ,  ERIC J. STEWART ,  KEN ALFRED NAGAMATSU ,  ROBERT S. HOWELL ,  SHALINI GUPTA

IPC分类号： H01L29/06 ,  H01L29/08 ,  H01L23/29 ,  H01L23/31 ,  H01L29/15 ,  H01L29/423 ,  H01L21/02 ,  H01L21/306 ,  H01L29/778 ,  H01L29/66

摘要： A transistor is provided that comprises a source region overlying a base structure, a drain region overlying the base structure, and a block of semiconducting material overlying the base structure and being disposed between the source region and the drain region. The block of semiconducting material comprises a gate controlled region adjacent the source region, and a drain access region disposed between the gate controlled region and the drain region. The drain access region is formed of a plurality of semiconducting material ridges spaced apart from one another by non-channel trench openings, wherein at least a portion of the non-channel trench openings being filled with a doped material to provide a depletion region to improve breakdown voltage of the transistor.