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公开(公告)号：US08120155B2
公开(公告)日：2012-02-21
申请号：US12183601
申请日：2008-07-31
Applicant: Earl V. Atnip , Simon Joshua Jacobs
Inventor： Earl V. Atnip , Simon Joshua Jacobs
CPC classification number: H01L23/26 , B81C1/00285 , H01L21/54 , H01L23/10 , H01L2924/0002 , H01L2924/16195 , H01L2924/00
Abstract: A MEMS device is packaged in a process which hydrogen (H) deuterium (D) for reduced stiction. H is exchanged with D by exposing the MEMS device with a deuterium source, such as deuterium gas or heavy water vapor, optionally with the assistance of a direct or downstream plasma.
Abstract translation: 一个MEMS器件被封装在氢（H）氘（D）的过程中，用于降低静电。 可以通过直接或下游等离子体的辅助，通过用诸如氘气或重水蒸汽的氘源将MEMS器件暴露在内来将H与D交换。
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Patent Agency Ranking
公开(公告)号：US20100025832A1
公开(公告)日：2010-02-04
申请号：US12183601
申请日：2008-07-31
Applicant: Earl V. Atnip , Simon Joshua Jacobs
Inventor： Earl V. Atnip , Simon Joshua Jacobs
CPC classification number: H01L23/26 , B81C1/00285 , H01L21/54 , H01L23/10 , H01L2924/0002 , H01L2924/16195 , H01L2924/00
Abstract: A MEMS device is packaged in a process which hydrogen (H) deuterium (D) for reduced stiction. H is exchanged with D by exposing the MEMS device with a deuterium source, such as deuterium gas or heavy water vapor, optionally with the assistance of a direct or downstream plasma.
Abstract translation: 一个MEMS器件被封装在氢（H）氘（D）的过程中，用于降低静电。 可以通过直接或下游等离子体的辅助，通过用诸如氘气或重水蒸汽的氘源将MEMS器件暴露在内来将H与D交换。
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公开(公告)号：US20090243011A1
公开(公告)日：2009-10-01
申请号：US12055419
申请日：2008-03-26
Applicant: Earl V. Atnip , William R. Morrison
Inventor： Earl V. Atnip , William R. Morrison
IPC: H01L31/0232 , G02B26/08
CPC classification number: G02B26/0841
Abstract: In accordance with the teachings of one embodiment of the present disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.
Abstract translation: 根据本公开的一个实施例的教导，半导体器件的制造方法包括从衬底向外形成支撑结构。 支撑结构具有第一厚度和不与基板平行的第一外侧壁表面。 第一外侧壁表面具有第一最小折射率。 第一抗反射层从支撑结构向外形成并且从衬底向外形成。 第二抗反射层从第一抗反射层向外形成。 第一和第二抗反射层各自包含选自以下的至少两种元素的各自的化合物：硅; 氮; 和氧气。
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公开(公告)号：US08736936B2
公开(公告)日：2014-05-27
申请号：US13437670
申请日：2012-04-02
Applicant: Earl V. Atnip , William R. Morrison
Inventor： Earl V. Atnip , William R. Morrison
IPC: G02B26/08
CPC classification number: G02B26/0841
Abstract: In accordance with the teachings of one embodiment of this disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.
Abstract translation: 根据本公开的一个实施例的教导，半导体器件的制造方法包括从衬底向外形成支撑结构。 支撑结构具有第一厚度和不与基板平行的第一外侧壁表面。 第一外侧壁表面具有第一最小折射率。 第一抗反射层从支撑结构向外形成并且从衬底向外形成。 第二抗反射层从第一抗反射层向外形成。 第一和第二抗反射层各自包含选自以下的至少两种元素的各自的化合物：硅; 氮; 和氧气。
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公开(公告)号：US20120307342A1
公开(公告)日：2012-12-06
申请号：US13437670
申请日：2012-04-02
Applicant: Earl V. Atnip , William R. Morrison
Inventor： Earl V. Atnip , William R. Morrison
CPC classification number: G02B26/0841
Abstract: In accordance with the teachings of one embodiment of this disclosure, a method for manufacturing a semiconductor device includes forming a support structure outwardly from a substrate. The support structure has a first thickness and a first outer sidewall surface that is not parallel with the substrate. The first outer sidewall surface has a first minimum refractive index. A first anti-reflective layer is formed outwardly from the support structure and outwardly from the substrate. A second anti-reflective layer is formed outwardly from the first anti-reflective layer. The first and second anti-reflective layers each includes respective compounds of at least two elements selected from the group consisting of: silicon; nitrogen; and oxygen.
Abstract translation: 根据本公开的一个实施例的教导，半导体器件的制造方法包括从衬底向外形成支撑结构。 支撑结构具有第一厚度和不与基板平行的第一外侧壁表面。 第一外侧壁表面具有第一最小折射率。 第一抗反射层从支撑结构向外形成并且从衬底向外形成。 第二抗反射层从第一抗反射层向外形成。 第一和第二抗反射层各自包含选自以下的至少两种元素的各自的化合物：硅; 氮; 和氧气。
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公开(公告)号：US6030754A
公开(公告)日：2000-02-29
申请号：US985593
申请日：1997-12-05
Applicant: Earl V. Atnip
Inventor： Earl V. Atnip
CPC classification number: G03F7/427 , Y10S438/906
Abstract: A method of removing photoresist material from a semiconductor wafer is disclosed. The method includes rinsing the semiconductor wafer in an organic solvent selected to dissolve the photoresist material. The method next rinses the semiconductor wafer in a light alcohol such as isopropyl alcohol. The method next subjects the semiconductor wafer to an alcohol vapor dry operation. An oxygen plasma ashing operation is then used to oxidize organic material on the semiconductor wafer. This is followed by another rinse. This post ash rinse includes only the light alcohol without the organic solvent. The post ash rinse may include dipping the semiconductor wafers into one or two isopropyl alcohol tanks. Finally is another alcohol vapor dry operation. The elimination of organic solvent use during the post ash rinse operation following the oxygen plasma ashing: reduces the organic solvent costs of acquisition, handling and disposal; reduces the length of time needed for the post ash rinse; reduces the capital equipment costs for the post ash rinse; and it is believed eliminates yield loss due to contaminants in the organic solvent.
Abstract translation: 公开了从半导体晶片去除光致抗蚀剂材料的方法。 该方法包括在选择用于溶解光致抗蚀剂材料的有机溶剂中冲洗半导体晶片。 该方法接着在诸如异丙醇的轻质醇中冲洗半导体晶片。 该方法接着使半导体晶片进行醇蒸气干燥操作。 然后使用氧等离子体灰化操作来氧化半导体晶片上的有机材料。 之后是另一次冲洗。 该灰分漂洗仅包含没有有机溶剂的轻质醇。 后灰分漂洗可包括将半导体晶片浸入一个或两个异丙醇罐中。 最后是另一种酒精蒸汽干燥操作。 在氧等离子体灰化后的灰分后漂洗操作中消除有机溶剂的使用：降低了获取，处理和处置的有机溶剂成本; 减少后灰分冲洗所需的时间长短; 降低了灰分冲洗的资本设备成本; 并且据信消除了由于有机溶剂中的污染物导致的产率损失。
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