公开(公告)号：US06593226B2

公开(公告)日：2003-07-15

申请号：US09906874

申请日：2001-07-17

申请人： Edward O. Travis ,  Aykut Dengi ,  Sejal Chheda ,  Tat-Kwan Yu ,  Mark S. Roberton ,  Ruiqi Tian ,  Robert E. Boone ,  Alfred J. Reich

发明人： Edward O. Travis ,  Aykut Dengi ,  Sejal Chheda ,  Tat-Kwan Yu ,  Mark S. Roberton ,  Ruiqi Tian ,  Robert E. Boone ,  Alfred J. Reich

IPC分类号： H01L214763

CPC分类号： H01L21/31053 ,  H01L21/3212 ,  Y10S438/926

摘要： Selective placement of polishing dummy feature patterns, rather than indiscriminate placement of polishing dummy feature patterns, is used. Both low frequency (hundreds of microns and larger) and high frequency (10 microns and less) of topography changes are examined. The polishing dummy feature patterns can be specifically tailored to a semiconductor device and polishing conditions used in forming the semiconductor device. When designing an integrated circuit, polishing effects for the active features can be predicted. After polishing dummy feature pattern(s) are placed into the layout, the planarity can be examined on a local level (a portion but not all of the device) and a more global level (all of the device, devices corresponding to a reticle field, or even an entire wafer).

公开(公告)号：US06396158B1

公开(公告)日：2002-05-28

申请号：US09340697

申请日：1999-06-29

申请人： Edward O. Travis ,  Aykut Dengi ,  Sejal Chheda ,  Tat-Kwan Yu ,  Mark S. Roberton ,  Ruiqi Tian

发明人： Edward O. Travis ,  Aykut Dengi ,  Sejal Chheda ,  Tat-Kwan Yu ,  Mark S. Roberton ,  Ruiqi Tian

IPC分类号： H01L2348

CPC分类号： H01L21/31053 ,  H01L21/3212 ,  Y10S438/926

摘要： Selective placement of polishing dummy feature patterns, rather than indiscriminate placement of polishing dummy feature patterns, is used. Both low frequency (hundreds of microns and larger) and high frequency (10 microns and less) of topography changes are examined. The polishing dummy feature patterns can be specifically tailored to a semiconductor device and polishing conditions used in forming the semiconductor device. When designing an integrated circuit, polishing effects for the active features can be predicted. After polishing dummy feature pattern(s) are placed into the layout, the planarity can be examined on a local level (a portion but not all of the device) and a more global level (all of the device, devices corresponding to a reticle field, or even an entire wafer).

摘要翻译： 使用抛光哑特征图案的选择性放置，而不是不加选择地放置抛光哑特征图案。 检查低频（几百微米和更大）和高频（10微米以下）的地形变化。 抛光哑特征图案可以专门针对半导体器件和用于形成半导体器件的抛光条件。 在设计集成电路时，可以预测有源特征的抛光效果。 抛光后，将虚拟特征图案放置在布局中，可以在局部级别（部分但不是全部设备）和更全球级别（所有设备，对应于标线区域的设备）检查平面度 ，甚至整个晶片）。

公开(公告)号：US5399234A

公开(公告)日：1995-03-21

申请号：US143020

申请日：1993-09-29

申请人： Chris C. Yu ,  Tat-Kwan Yu ,  Jeffrey L. Klein

发明人： Chris C. Yu ,  Tat-Kwan Yu ,  Jeffrey L. Klein

IPC分类号： B24B49/00 ,  H01L21/00

CPC分类号： B24B37/013 ,  B24B49/00

摘要： A chemical-mechanical-polishing process in which acoustic waves are generated in the polishing slurry (18) to enable detection of an end-point in the polishing process, and to continuously clean the surface of a polishing pad (14) in a polishing apparatus (10). Acoustic waves are generated in the polishing slurry (18) by submerging a transducer (28) in the polishing slurry (18). The transducer (28) is powered by a voltage amplifier (30) coupled to a frequency generator (32). The frequency of the acoustic waves is adjusted by the frequency generator (32) to obtain optimum wave generation in the polishing slurry (18). The end-point of the polishing process is detected by a change in the acoustic wave velocity in the polishing slurry (18), which occurs when the slurry composition changes at end-point. The wave velocity is monitored by a receiver (34) submerged in the polishing slurry (18) at a predetermined distance from the transducer (28). Additionally, the acoustic wave frequency can be adjusted by the frequency generator (32) to induce sonic vibration in the polishing pad (14) such that continuous cleaning action is attained on the surface of the polishing pad (14).

摘要翻译： 一种化学机械抛光工艺，其中在抛光浆料（18）中产生声波以使得能够检测抛光过程中的终点，并且在抛光装置中连续地清洁抛光垫（14）的表面 （10）。 在抛光浆料（18）中通过浸没在抛光浆料（18）中的换能器（28）产生声波。 换能器（28）由耦合到频率发生器（32）的电压放大器（30）供电。 通过频率发生器（32）调整声波的频率，以在抛光浆料（18）中获得最佳的波浪产生。 抛光过程的终点是通过在浆料组合物在端点处变化时发生的抛光浆料（18）中的声波速度的变化来检测的。 波速由接收器（34）监测，该接收器（34）浸没在与传感器（28）预定距离的抛光浆料（18）中。 此外，可以通过频率发生器（32）来调节声波频率，以引起抛光垫（14）中的声音振动，使得在抛光垫（14）的表面上获得连续的清洁动作。

公开(公告)号：US5674352A

公开(公告)日：1997-10-07

申请号：US456278

申请日：1995-05-15

申请人： Chris Chang Yu ,  Tat-Kwan Yu

发明人： Chris Chang Yu ,  Tat-Kwan Yu

IPC分类号： B24B1/00 ,  B24B37/26 ,  B24D11/00 ,  H01L21/304 ,  H01L21/306

CPC分类号： B24B37/26

摘要： The present invention includes a modified polishing pad and methods on how to form and use the polishing pad. In one embodiment, a modified polishing pad is formed similar to polishing substrates except that the modifying pressure should be large enough to mechanically deform part of the polishing pad. The modifying pressure is typically at least 10 pounds per square inch. The materials used to modify the pad should be hard with a smooth surface. Examples of these materials are metals, dielectrics, and semiconductors. After modifying the polishing pad, it may be used to polish semiconductor substrates. Compared to a fresh pad, the modified polishing pad should have a higher planarization efficiency and be less likely to cause corner rounding of a patterned layer adjacent to an opening.

摘要翻译： 本发明包括改进的抛光垫以及如何形成和使用抛光垫的方法。 在一个实施例中，类似于抛光基板形成改进的抛光垫，除了改进压力应该足够大以使抛光垫的一部分机械地变形。 修改压力通常为至少10磅/平方英寸。 用于修改垫的材料应该很硬，表面光滑。 这些材料的实例是金属，电介质和半导体。 修改抛光垫后，可用于抛光半导体衬底。 与新垫相比，改性抛光垫应具有更高的平坦化效率，并且不太可能导致与开口相邻的图案化层的圆角。

公开(公告)号：US5441598A

公开(公告)日：1995-08-15

申请号：US167008

申请日：1993-12-16

申请人： Tat-Kwan Yu ,  Chris C. Yu

发明人： Tat-Kwan Yu ,  Chris C. Yu

IPC分类号： B23H5/08 ,  B24B37/26 ,  B24D13/14 ,  H01L21/461

CPC分类号： B24B37/26 ,  B23H5/08

摘要： A mold is used to form a polishing pad, wherein the surface of the polishing side of the polishing pad is determined by a primary surface of the mold. Features along the polishing side of a polishing pad may take any one of several different shapes. Channels along the polishing side of the polishing pad allow a smaller pore size to be used. The mold allows more control over the surface of the polishing side, which in turn give more control over polishing characteristics.

摘要翻译： 使用模具来形成抛光垫，其中抛光垫的抛光侧的表面由模具的主表面确定。 沿着抛光垫的抛光侧的特征可以采用几种不同形状中的任一种。 沿着抛光垫的抛光侧的通道允许使用较小的孔径。 该模具允许更多地控制抛光侧的表面，这反过来又对抛光特性提供了更多的控制。

公开(公告)号：US5628862A

公开(公告)日：1997-05-13

申请号：US444172

申请日：1995-05-18

申请人： Tat-Kwan Yu ,  Chris C. Yu

发明人： Tat-Kwan Yu ,  Chris C. Yu

IPC分类号： B23H5/08 ,  B24B37/26 ,  B24D13/14 ,  H01L21/461

CPC分类号： B24B37/26 ,  B23H5/08

摘要： A mold is used to form a polishing pad, wherein the surface of the polishing side of the polishing pad is determined by a primary surface of the mold. Features along the polishing side of a polishing pad may take any one of several different shapes. Channels along the polishing side of the polishing pad allow a smaller pore size to be used. The mold allows more control over the surface of the polishing side, which in turn give more control over polishing characteristics.

摘要翻译： 使用模具来形成抛光垫，其中抛光垫的抛光侧的表面由模具的主表面确定。 沿着抛光垫的抛光侧的特征可以采用几种不同形状中的任一种。 沿着抛光垫的抛光侧的通道允许使用较小的孔径。 该模具允许更多地控制抛光侧的表面，这反过来又对抛光特性提供了更多的控制。

公开(公告)号：US5531861A

公开(公告)日：1996-07-02

申请号：US373804

申请日：1995-01-17

申请人： Chris C. Yu ,  Tat-Kwan Yu

发明人： Chris C. Yu ,  Tat-Kwan Yu

IPC分类号： B24B49/00 ,  H01L21/306 ,  B08B3/12 ,  B08B5/02 ,  H01L21/304

CPC分类号： B24B49/00 ,  B24B37/013 ,  Y10S438/959

摘要： A chemical-mechanical-polishing process in which energy is imparted to a polishing pad (18) dislodging particles (46), which are removed by vacuum withdrawal to continuously clean the surface of the polishing pad (14). Energy is imparted to polishing pad (18) by either sonic energy from acoustic waves, or by physical impaction. The acoustic waves are generated by submerging a transducer (28) in the polishing slurry (18). The transducer (28) is powered by a voltage amplifier (30) coupled to a computer controlled-frequency generator (32). The acoustic wave frequency is adjusted by the frequency generator (32) to induce sonic vibration in the polishing pad (14) such that particles (46) are continuously dislodged from polishing pad (14). Physical impaction is performed by an impaction tool (48) coupled to a vacuum head (33).

摘要翻译： 一种化学机械抛光工艺，其中赋予抛光垫（18）能量移除颗粒（46），颗粒（46）通过真空抽出除去以连续清洁抛光垫（14）的表面。 通过来自声波的声能或通过物理碰撞将能量赋予抛光垫（18）。 通过将探测器（28）浸没在抛光浆料（18）中来产生声波。 换能器（28）由耦合到计算机控制频率发生器（32）的电压放大器（30）供电。 通过频率发生器（32）调节声波频率，以引起抛光垫（14）中的声波振动，使得颗粒（46）从抛光垫（14）连续移开。 通过耦合到真空头（33）的冲击工具（48）来执行物理冲击。