High speed thermo-optic phase shifter and devices comprising same
    2.
    发明授权
    High speed thermo-optic phase shifter and devices comprising same 有权
    高速热电相移器及包括其的装置

    公开(公告)号:US06925232B2

    公开(公告)日:2005-08-02

    申请号:US10448711

    申请日:2003-05-30

    摘要: In accordance with the invention, a high speed thermo-optic phase shifter comprises a length of optical waveguide including a waveguiding core of a first material having an index of refraction n1 and a first order temperature dependence |dn1/dT| and, optically coupled to the core, a length of a second material having an index n2 preferably greater than the core (n2>n1) and a first order temperature dependence |dn2/dT| than the core (|dn2/dT|>|dn1/dT|). Advantageously, the length of second material is adiabatically tapered at both ends. Upon heating, as by a resistance heater, the second material changes the optical pathlength by an amount predominantly determined by |dn2/dT| providing faster switching speed. In a preferred embodiment, the core comprises silica, and the second material comprises silicon to produce switching speeds up to a few hundred MHz.

    摘要翻译: 根据本发明,高速热光移相器包括一段光波导,其包括具有折射率n 1的第一材料的波导芯和一阶温度依赖性| dn 1 / dT | 并且光学地耦合到所述芯,具有优选地大于所述芯的指数n 2的第二材料的长度(n <2) >)和一阶温度依赖性| dn <2 / dT | (| dn 2 / dT |> | dn <1> / dT |)。 有利地,第二材料的长度在两端是绝热的锥形。 在加热时,如电阻加热器那样,第二材料将光程长度改变主要由| dn2 / dT | 提供更快的切换速度。 在优选实施例中,芯包括二氧化硅,第二材料包括硅以产生高达几百MHz的切换速度。

    Compact mach-zehnder interferometer and wavelength reference employing
same
    4.
    发明授权
    Compact mach-zehnder interferometer and wavelength reference employing same 失效
    紧凑型Mach-Zehnder干涉仪和使用其的波长参考

    公开(公告)号:US6115520A

    公开(公告)日:2000-09-05

    申请号:US35317

    申请日:1998-03-05

    IPC分类号: G02B6/12 G02B6/26 G01B9/02

    摘要: The present invention includes a MZI comprising a pair of folded waveguides disposed between a pair of couplers. Each folded waveguide comprises a pair of segments intersecting at a reflector. The respective reflectors are different distances from the couplers to provide a major portion of the differential path length between the two arms. In a preferred embodiment, the reflectors are polysilicon mirrors and can be formed by etching through the intersecting waveguides and depositing polysilicon. The result is a compact MZI that can be used as a multiwavelength reference for a laser light source on a common silicon optical bench chip.

    摘要翻译: 本发明包括一个MZI,包括设置在一对耦合器之间的一对折叠波导。 每个折叠的波导包括在反射器处相交的一对段。 各个反射器是与耦合器不同的距离,以提供两个臂之间的差动路径长度的主要部分。 在优选实施例中,反射器是多晶硅反射镜,并且可以通过蚀刻穿过相交的波导并沉积多晶硅来形成。 结果是紧凑的MZI,可以用作普通硅光学台式芯片上激光光源的多波长参考。

    Optimized waveguide structure
    5.
    发明授权
    Optimized waveguide structure 失效
    优化波导结构

    公开(公告)号:US5719976A

    公开(公告)日:1998-02-17

    申请号:US547767

    申请日:1995-10-24

    摘要: An optimized waveguide structure enables the functional integration of various passive optic components on a single substrate. The optimized waveguide structure is characterized by a thicker core layer than used for square core waveguides and a core width that changes according to different functional regions of the optic circuit within which it is incorporated. The height (H) of the waveguide core is determined by the thickness of the core layer defined during the fabrication process and is ideally uniform across the circuit. The width (W) of the core, however, is changed between functional regions by the photo-lithographic mask and the chemical etching during the fabrication process. By way of example, an optimized waveguide structure for a P-doped silica planar waveguide with a .DELTA. approximately 0.6% for wavelength .lambda.=1.2-1.7 .mu.m, has a single uniform height of H=6.7 .mu.m and a width that changes between W=4 .mu.m in a coupler region, W=5.5 .mu.m in a bend region, W=9 .mu.m in a fiber coupling region, and W=10 .mu.m in a phase grating region of a Dragone router. Adiabatic tapers are used as transition regions between regions of different core widths.

    摘要翻译: 优化的波导结构使得能够在单个基板上的各种无源光学元件的功能集成。 优化的波导结构的特征在于比用于方芯波导的核心层更厚,并且根据其所结合的光电路的不同功能区域而变化的芯宽度。 波导芯的高度(H)由在制造过程中限定的芯层的厚度确定,并且在整个电路上理想地是均匀的。 然而,通过光刻掩模和制造过程中的化学蚀刻在功能区域之间改变芯的宽度(W)。 作为示例,用于波长λ=1.2-1.7μm的DELTA约0.6%的P掺杂二氧化硅平面波导的优化波导结构具有H =6.7μm的单一均匀高度,并且宽度在 在耦合器区域中W =4μm,在弯曲区域中W =5.5μm,在光纤耦合区域中W =9μm,在Dragone路由器的相位光栅区域中W =10μm。 绝热锥度用作不同芯宽的区域之间的过渡区域。