摘要:
An optical module is provided for performing a prescribed function such as dispersion compensation, for example. The optical module is to be integrated between stages of a multi-stage rare-earth doped optical amplifier. The module includes an input port for receiving optical energy from one stage of the rare-earth doped optical amplifier and a rare-earth doped planar waveguide coupled to the input port. An optically lossy, passive element is provided for performing the prescribed function. The optically lossy, passive element is coupled to the planar waveguide for receiving optical energy therefrom. An output port is coupled to the optically lossy, passive element for providing optical energy to another stage of the rare-earth doped optical amplifier. The rare-earth doped planar waveguide has a first unsaturated absorption spectrum and the rare-earth doped optical amplifier has a second unsaturated absorption spectrum such that the ratio of the first to the second absorption spectrum is substantially wavelength independent within the spectral range of incoming and outgoing optical energy. The rare-earth doped planar waveguide has a length determined at least in part from a value of optical loss in the passive element and characteristics of the rare-earth doped optical amplifier.
摘要:
An active optical device comprises a glass, waveguiding structure disposed on a substantially planar principal surface of a substrate. The structure includes a silica-based, erbium-doped active core. The active core has an erbium-to-silicon atomic ratio of at least about 0.01, an absolute erbium concentration of at least about 1.4.times.10.sup.20 atoms per cubic centimeter, and a radiative lifetime of the erbium lasing level of at least about 7 milliseconds. Also disclosed is a method for forming an active optical device, including the step of depositing an erbium-doped active core by sputtering.
摘要:
A novel epitaxial phosphor having high luminosity at about 540 nm has the composition (Y.sub.3-x-y Tb.sub.x RE.sub.y)(Al.sub.5-w Ga.sub.w)O.sub.12, with RE being one (or more) 4f-type rare earth(s) other than Tb, 0.09
摘要翻译:在约540nm处具有高发光度的新型外延荧光体具有组成(Y3-x-yTbxREy)(Al5-wGaw)O12,RE为除Tb以外的一种(或多种)4f型稀土, x <0.7和1.5
摘要:
The luminescent screen of a cathode ray tube includes an array of monocrystalline or amorphous phosphor rod-like elements which are covered with a reflective coating except for one end of each element which serves as an output face. The phenomenon of the light trapping is advantageously exploited to achieve enhanced brightness. The screen is illuminated with an electron beam which has an essentially oblong cross section and which is oriented along the elongated dimension of the elements. In one embodiment the elements comprise epitaxial Lu.sub.3 Al.sub.3 Ga.sub.2 O.sub.12 :Ce on the top of a YAG substrate, and a light absorbing layer of Lu.sub.3 Al.sub.3.5 Fe.sub.1.5 O.sub.12 is formed on the bottom of the substrate. A printer utilizing such a CRT is described. Also described is a configuration in which each of the rod-like elements functions as a laser.
摘要:
In a CRT system the luminescent screen includes an ordered array of rows and columns of phosphor elements, illustratively made of single crystal material. Each element is surrounded on all sides (except the light output face) by reflective material. To enhance light extraction efficiency, the output face may be textured. An electron beam is made incident on the output face of selected ones of the elements and scans in two dimensions across the plane of the elements. Also described is an arrangement whereby the electron beam is made incident on the back surface of the elements opposite the output face.
摘要:
An apparatus is provided to compensate for dispersion in a transmission medium. The apparatus includes an input port for receiving a WDM optical signal having a plurality of signal wavelengths and a first Bragg transmission grating receiving the WDM optical signal from the input port. The first Bragg transmission grating has non-zero dispersion at at least one of the signal wavelengths. The first Bragg transmission grating also has a Bragg wavelength that is chosen so that all of the plurality of signal wavelengths lie outside of a reflection band of the first Bragg transmission grating. A second Bragg transmission grating, which is optically coupled to the first Bragg transmission grating, has a non-zero dispersion at at least one of the signal wavelengths. The second Bragg transmission grating also has a Bragg wavelength that is selected so that all of the plurality of signal wavelengths lie outside of a reflection band of the second Bragg transmission grating. Finally, an output port is provided for receiving the optical signal from the second Bragg grating and communicating the optical signal to an external source.
摘要:
In accordance with a specific deposition/etching sequence, a multi-layer metallization system is formed on the non-planar top surface of a semiconductor wafer. In an electrophoretic deposition step, a conformal uniform-thickness layer of a resist material is then formed on the top surface of the metallization system. In turn, the layer of resist material is lithographically patterned to provide an etch-mask for defining features in the underlying metallization system.
摘要:
During formation of solder bumps on the bonding pads of a component, a two-layer dam structure is utilized to block solder from flowing from the pads to adjacent portions of a metallization pattern. After the solder bumps are formed, the top dam layer is dissolved, whereby any solder debris present on the top dam layer is also removed from the structure. The bottom dam layer, which remains intact during the removal step, serves to confine solder movement during a subsequent bonding operation in which the solder bumps are reflowed to cause them to adhere to aligned pads on another component.
摘要:
Plural planar optical devices are simultaneously pumped by a single pumping source. Various arrangements for accomplishing such pumping are disclosed. By utilizing these arrangements, the topology and routing of integrated arrays including optical devices are simplified.
摘要:
We have found that etching of a body that comprises exposed Si as well as a Ti-comprising metal layer (e.g., a patterned Ti/Pt layer) in an amine-based anisotropic etchant for Si (e.g., 100.degree. C. EDP) frequently results in undesirable changes in the Ti-comprising metal layer. We have also found that the changes can be substantially reduced or eliminated by electrolytic means, namely, by making the metal layer the anode in an electrolytic cell that contains the etchant.