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    Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
    1.
    发明授权
    Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material 失效
    能量敏感抗蚀剂材料和使用能量敏感抗蚀剂材料的器件制造方法

    公开(公告)号：US5879857A

    公开(公告)日：1999-03-09

    申请号：US813732

    申请日：1997-03-07

    申请人： Edwin Arthur Chandross ,  Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

    发明人： Edwin Arthur Chandross ,  Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

    IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00 ,  G03C1/492

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/111

    摘要： A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a polymer in combination with a dissolution inhibitor and a photoacid generator (PAG). The dissolution inhibitor is the condensation reaction product of a saturated polycyclic hydrocarbon compound with at least one hydroxy (OH) substituent and a difunctional saturated linear, branched, or cyclic hydrocarbon compound wherein the functional groups are either carboxylic acid or carboxylic acid chloride groups. The condensation product has at least two polycylic moieties. The polymer optionally has acid labile groups pendant thereto which significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

    摘要翻译： 公开了一种在该方法中使用的器件制造和抗蚀材料的方法。 抗蚀剂材料包含与溶解抑制剂和光酸产生剂（PAG）组合的聚合物。 溶解抑制剂是饱和多环烃化合物与至少一种羟基（OH）取代基和双官能饱和直链，支链或环状烃化合物的缩合反应产物，其中官能团是羧酸或羧酰氯基团。 缩合产物具有至少两个多环部分。 聚合物任选地具有垂饰的酸不稳定基团，其显着降低聚合物在碱性水溶液中的溶解度。 抗蚀剂材料的膜形成在基板上并暴露于描绘辐射。 辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。 使用常规技术开发引入抗蚀剂材料的图像，然后将所得到的图案转移到下面的基底中。

    Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
    2.
    发明授权
    Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material 失效
    能量敏感抗蚀剂材料和使用能量敏感抗蚀剂材料的器件制造方法

    公开(公告)号：US5843624A

    公开(公告)日：1998-12-01

    申请号：US803703

    申请日：1997-02-21

    申请人： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

    发明人： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

    IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00

    CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/114 ,  Y10S430/146

    摘要： The present invention is directed to a process for device fabrication and resist materials that are used in the process. The resist material contains a polymer that is the polymerization product of a monomer that contains alicyclic moieties and at least one other monomer. The polymer is formed by free radical polymerization, and the resulting polymer either has alicyclic moieties incorporated into the polymer backbone or pendant to the polymer backbone via saturated hydrocarbon linkages. Other monomers are selected for polymerization with the alicyclic moiety-containing monomer on the basis of the ability of the monomer to copolymerize by free radical polymerization. Although the polymers are contemplated as useful in resist materials that are sensitive to radiation in the ultraviolet, and x-ray wavelengths as well as sensitive to electron beam radiation, the polymers are particularly advantageous for use in process in which the exposing radiation is 193 nm, because the amount of ethylenic unsaturation in these resist materials is low.

    摘要翻译： 本发明涉及用于该方法的器件制造和抗蚀剂材料的方法。 抗蚀剂材料含有聚合物，其是含有脂环部分的单体和至少一种其它单体的聚合产物。 聚合物通过自由基聚合形成，并且所得聚合物或者具有引入到聚合物主链中的脂环部分或通过饱和烃键垂饰于聚合物主链。 基于单体通过自由基聚合共聚的能力，选择其它单体与含脂环部分的单体聚合。 虽然聚合物被认为可用于对紫外线和X射线波长以及对电子束辐射敏感的抗辐射材料，但是聚合物特别有利于在曝光辐射为193nm ，因为这些抗蚀剂材料中的烯属不饱和基团的量低。

    Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
    3.
    发明授权
    Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material 失效
    能量敏感抗蚀剂材料和使用能量敏感抗蚀剂材料的器件制造方法

    公开(公告)号：US5998099A

    公开(公告)日：1999-12-07

    申请号：US83168

    申请日：1998-05-22

    申请人： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Thomas Ingolf Wallow

    发明人： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Thomas Ingolf Wallow

    IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/121

    摘要： A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a substituted amine-containing component and a polymer. The substituted-amine containing component is either a photoacid generator, or an amine additive to the resist material that also contains a photoacid generator. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

    摘要翻译： 公开了一种在该方法中使用的器件制造和抗蚀材料的方法。 抗蚀剂材料含有取代的含胺组分和聚合物。 含取代胺的组分是光致酸产生剂，或者还含有光致酸产生剂的抗蚀剂材料的胺添加剂。 抗蚀剂材料包含垂直于聚合物的酸不稳定基团或与聚合物组合的溶解抑制剂。 酸不稳定基团显着降低聚合物在碱性水溶液中的溶解度。 抗蚀剂材料的膜形成在基板上并暴露于描绘辐射。 辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。 使用常规技术开发引入抗蚀剂材料的图像，然后将所得到的图案转移到下面的基底中。