公开(公告)号：US5879857A

公开(公告)日：1999-03-09

申请号：US813732

申请日：1997-03-07

申请人： Edwin Arthur Chandross ,  Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

发明人： Edwin Arthur Chandross ,  Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00 ,  G03C1/492

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/111

摘要： A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a polymer in combination with a dissolution inhibitor and a photoacid generator (PAG). The dissolution inhibitor is the condensation reaction product of a saturated polycyclic hydrocarbon compound with at least one hydroxy (OH) substituent and a difunctional saturated linear, branched, or cyclic hydrocarbon compound wherein the functional groups are either carboxylic acid or carboxylic acid chloride groups. The condensation product has at least two polycylic moieties. The polymer optionally has acid labile groups pendant thereto which significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

摘要翻译： 公开了一种在该方法中使用的器件制造和抗蚀材料的方法。 抗蚀剂材料包含与溶解抑制剂和光酸产生剂（PAG）组合的聚合物。 溶解抑制剂是饱和多环烃化合物与至少一种羟基（OH）取代基和双官能饱和直链，支链或环状烃化合物的缩合反应产物，其中官能团是羧酸或羧酰氯基团。 缩合产物具有至少两个多环部分。 聚合物任选地具有垂饰的酸不稳定基团，其显着降低聚合物在碱性水溶液中的溶解度。 抗蚀剂材料的膜形成在基板上并暴露于描绘辐射。 辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。 使用常规技术开发引入抗蚀剂材料的图像，然后将所得到的图案转移到下面的基底中。

公开(公告)号：US5998099A

公开(公告)日：1999-12-07

申请号：US83168

申请日：1998-05-22

申请人： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Thomas Ingolf Wallow

发明人： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Thomas Ingolf Wallow

IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/111 ,  Y10S430/115 ,  Y10S430/12 ,  Y10S430/121

摘要： A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains a substituted amine-containing component and a polymer. The substituted-amine containing component is either a photoacid generator, or an amine additive to the resist material that also contains a photoacid generator. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

摘要翻译： 公开了一种在该方法中使用的器件制造和抗蚀材料的方法。 抗蚀剂材料含有取代的含胺组分和聚合物。 含取代胺的组分是光致酸产生剂，或者还含有光致酸产生剂的抗蚀剂材料的胺添加剂。 抗蚀剂材料包含垂直于聚合物的酸不稳定基团或与聚合物组合的溶解抑制剂。 酸不稳定基团显着降低聚合物在碱性水溶液中的溶解度。 抗蚀剂材料的膜形成在基板上并暴露于描绘辐射。 辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。 使用常规技术开发引入抗蚀剂材料的图像，然后将所得到的图案转移到下面的基底中。

公开(公告)号：US5843624A

公开(公告)日：1998-12-01

申请号：US803703

申请日：1997-02-21

申请人： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

发明人： Francis Michael Houlihan ,  Omkaram Nalamasu ,  Elsa Reichmanis ,  Thomas Ingolf Wallow

IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/114 ,  Y10S430/146

摘要： The present invention is directed to a process for device fabrication and resist materials that are used in the process. The resist material contains a polymer that is the polymerization product of a monomer that contains alicyclic moieties and at least one other monomer. The polymer is formed by free radical polymerization, and the resulting polymer either has alicyclic moieties incorporated into the polymer backbone or pendant to the polymer backbone via saturated hydrocarbon linkages. Other monomers are selected for polymerization with the alicyclic moiety-containing monomer on the basis of the ability of the monomer to copolymerize by free radical polymerization. Although the polymers are contemplated as useful in resist materials that are sensitive to radiation in the ultraviolet, and x-ray wavelengths as well as sensitive to electron beam radiation, the polymers are particularly advantageous for use in process in which the exposing radiation is 193 nm, because the amount of ethylenic unsaturation in these resist materials is low.

摘要翻译： 本发明涉及用于该方法的器件制造和抗蚀剂材料的方法。 抗蚀剂材料含有聚合物，其是含有脂环部分的单体和至少一种其它单体的聚合产物。 聚合物通过自由基聚合形成，并且所得聚合物或者具有引入到聚合物主链中的脂环部分或通过饱和烃键垂饰于聚合物主链。 基于单体通过自由基聚合共聚的能力，选择其它单体与含脂环部分的单体聚合。 虽然聚合物被认为可用于对紫外线和X射线波长以及对电子束辐射敏感的抗辐射材料，但是聚合物特别有利于在曝光辐射为193nm ，因为这些抗蚀剂材料中的烯属不饱和基团的量低。

公开(公告)号：US6159665A

公开(公告)日：2000-12-12

申请号：US79310

申请日：1993-06-17

申请人： Evelyn Chin ,  Francis Michael Houlihan ,  Omkaram Nalamasu

发明人： Evelyn Chin ,  Francis Michael Houlihan ,  Omkaram Nalamasu

IPC分类号： C07C309/67 ,  C07C309/69 ,  C07C309/70 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027 ,  G03C1/492

CPC分类号： G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： Photoacid generators advantageous for use in applications such as photoacid generators used in chemically amplified resists are disclosed. These compounds are based on an ortho nitro benzyl configuration employing an .alpha. substituent having high bulk, steric characteristics, and electron withdrawing ability. The enhanced efficacy is particularly found in compounds both having a suitable .alpha. substituent and a second ortho substituent with large electron withdrawing and steric effects.

摘要翻译： 公开了用于化学放大抗蚀剂中使用的光酸产生剂的光酸发生器。 这些化合物基于采用具有高体积，空间特征和吸电能力的α取代基的邻硝基苄基构型。 在具有合适的α取代基的化合物和具有大的吸电子和立体效应的第二邻位取代基的化合物中，特别发现增强的功效。

公开(公告)号：US5958654A

公开(公告)日：1999-09-28

申请号：US918781

申请日：1997-08-25

申请人： Mary Ellen Galvin-Donoghue ,  Francis Michael Houlihan ,  Janet Mihoko Kometani ,  Omkaram Nalamasu ,  Thomas Xavier Neenan

发明人： Mary Ellen Galvin-Donoghue ,  Francis Michael Houlihan ,  Janet Mihoko Kometani ,  Omkaram Nalamasu ,  Thomas Xavier Neenan

IPC分类号： G03F7/004 ,  G03F7/039 ,  G03F7/30 ,  H01L21/027 ,  G03F7/00

CPC分类号： G03F7/039 ,  G03F7/0045

摘要： A process for device fabrication is disclosed. In the process, an energy sensitive material is formed on a substrate. The energy sensitive resist material contains a polymer or a polymer blend in combination with an energy-sensitive material such as a photoacid generator. At least three substituents are distributed on the polymer blend. The first of these substituents is a hydroxyl (OH) group. The second of these substituents is an acid-sensitive or acid labile group which is cleaved in the presence of acid and replaced by an OH group. The third of these substituents forms hydrogen bonds with the first group. The ratio of the number of OH substituents relative to the number of substituents that hydrogen bond to the OH substituents (mole percent) is about 40:1 to at least about 1:1. The relative amounts of the first and third substituents is selected to provide a resist material with a glass transition temperature of at least about 60.degree.. After a layer of the energy sensitive resist material is formed on the substrate, an image of a pattern is introduced into the energy-sensitive material via a patternwise exposure to radiation. The image is thereafter developed into a pattern, and transferred into the underlying substrate.

公开(公告)号：US5830619A

公开(公告)日：1998-11-03

申请号：US777008

申请日：1997-01-07

申请人： Evelyn Chin ,  Francis Michael Houlihan ,  Omkaram Nalamasu

发明人： Evelyn Chin ,  Francis Michael Houlihan ,  Omkaram Nalamasu

IPC分类号： C07C309/67 ,  C07C309/69 ,  C07C309/70 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027

CPC分类号： G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： Photoacid generators advantageous for use in applications such as photoacid generators used in chemically amplified resists are disclosed. These compounds are based on an ortho nitro benzyl configuration employing an .alpha. substituent having high bulk, steric characteristics, and electron withdrawing ability. The enhanced efficacy is particularly found in compounds both having a suitable .alpha. substituent and a second ortho substituent with large electron withdrawing and steric effects.

摘要翻译： 公开了用于化学放大抗蚀剂中使用的光酸产生剂的光酸发生器。 这些化合物基于采用具有高体积，空间特征和吸电能力的α取代基的邻硝基苄基构型。 在具有合适的α取代基的化合物和具有大的吸电子和立体效应的第二邻位取代基的化合物中，特别发现增强的功效。

公开(公告)号：US06296984B1

公开(公告)日：2001-10-02

申请号：US09268448

申请日：1999-03-12

申请人： Allen H. Gabor ,  Francis Michael Houlihan ,  Omkaram Nalamasu

发明人： Allen H. Gabor ,  Francis Michael Houlihan ,  Omkaram Nalamasu

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/115

摘要： A process for device fabrication and resist materials that are used in the process are disclosed. The resist material contains acid labile groups either pendant to the polymer or to a dissolution inhibitor that is combined with the polymer. The acid labile groups significantly decrease the solubility of the polymer in a solution of aqueous base. The resist material also contains a photoacid generator and a radical scavenger. The radical scavenger reduces the amount of aromatic compounds outgassed from the resist during the lithographic process. A film of the resist material is formed on a substrate and exposed to delineating radiation. The radiation induces a chemical change in the resist material rendering the exposed resist material substantially more soluble in aqueous base solution than the unexposed portion of the resist material. The image introduced into the resist material is developed using conventional techniques, and the resulting pattern is then transferred into the underlying substrate.

摘要翻译： 公开了一种在该方法中使用的器件制造和抗蚀材料的方法。 抗蚀剂材料包含垂直于聚合物的酸不稳定基团或与聚合物组合的溶解抑制剂。 酸不稳定基团显着降低聚合物在碱性水溶液中的溶解度。 抗蚀剂材料还含有光致酸产生剂和自由基清除剂。 自由基清除剂减少了在光刻过程中从抗蚀剂中脱气的芳族化合物的量。 抗蚀剂材料的膜形成在基板上并暴露于描绘辐射。 辐射引起抗蚀剂材料中的化学变化，使得暴露的抗蚀剂材料比抗蚀剂材料的未曝光部分基本上更溶于碱性水溶液。 使用常规技术开发引入抗蚀剂材料的图像，然后将所得到的图案转移到下面的基底中。

公开(公告)号：US08603195B2

公开(公告)日：2013-12-10

申请号：US12858531

申请日：2010-08-18

申请人： Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

发明人： Victor L. Pushparaj ,  Pravin K. Narwankar ,  Omkaram Nalamasu

IPC分类号： H01M4/13 ,  H01M4/58 ,  H01M4/60 ,  H01M4/82 ,  H01M6/12 ,  H01M6/46 ,  B05D5/12

CPC分类号： H01M4/661 ,  H01G9/0029 ,  H01G9/0032 ,  H01G9/155 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M10/0525 ,  H01M10/0565 ,  H01M10/0585 ,  Y02E60/13 ,  Y10T29/49115

摘要： Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300° C. and about 600° C., and depositing a conformal layer of cathodic material over the conformal polymeric layer.

摘要翻译： 提供了形成储能装置的方法和装置。 在一个实施例中，提供了一种生产能量存储装置的方法。 该方法包括将阳极集电器定位到处理区域中，在阳极集电器的表面上沉积由有限距离分隔的一个或多个三维电极，使得阳极集电器的表面的一部分保持暴露， 使用iCVD技术使阳极集电器和一个或多个三维电极上的共形聚合物层包括使气态单体流入加工区域，将气态引发剂通过加热的细丝流入加工区域以形成反应性气体混合物 气态单体和气态引发剂，其中将加热的长丝加热至约300℃至约600℃之间的温度，以及在共形聚合物层上沉积保形层的阴极材料。

公开(公告)号：US08409895B2

公开(公告)日：2013-04-02

申请号：US13036273

申请日：2011-02-28

申请人： Mingwei Zhu ,  Vivek Agrawal ,  Nag B. Patibandla ,  Omkaram Nalamasu

发明人： Mingwei Zhu ,  Vivek Agrawal ,  Nag B. Patibandla ,  Omkaram Nalamasu

IPC分类号： H01L33/005

CPC分类号： H01L21/0254 ,  C23C14/0641 ,  C23C14/568 ,  C23C16/34 ,  C23C28/04 ,  C23C28/044 ,  C30B23/02 ,  C30B25/08 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/0095

摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.

摘要翻译： 描述了具有形成氮化铝缓冲层的物理气相沉积（PVD）的氮化镓基发光二极管（LED）的制造。

公开(公告)号：US20120322011A1

公开(公告)日：2012-12-20

申请号：US13455784

申请日：2012-04-25

申请人： Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

发明人： Banqiu Wu ,  Ajay Kumar ,  Kartik Ramaswamy ,  Omkaram Nalamasu

IPC分类号： G03F7/36

CPC分类号： G03F7/36 ,  G03F7/40

摘要： The present invention provides methods and an apparatus controlling and minimizing process defects in a development process, and modifying line width roughness (LWR) of a photoresist layer after the development process, and maintaining good profile control during subsequent etching processes. In one embodiment, a method for forming features on a substrate includes developing and removing exposed areas in the photosensitive layer disposed on the substrate in the electron processing chamber by predominantly using electrons, removing contaminants from the substrate by predominantly using electrons, and etching the non-photosensitive polymer layer exposed by the developed photosensitive layer in the electron processing chamber by predominantly using electrons.

摘要翻译： 本发明提供了控制和最小化显影过程中的工艺缺陷的方法和装置，并且在显影过程之后修改光致抗蚀剂层的线宽粗糙度（LWR），并且在随后的蚀刻工艺期间保持良好的轮廓控制。 在一个实施例中，用于在衬底上形成特征的方法包括通过主要使用电子来显影和去除设置在电子处理室中的衬底上的感光层中的暴露区域，通过主要使用电子从衬底去除污染物， 通过主要使用电子在电子处理室中由显影的感光层曝光的光敏聚合物层。