公开(公告)号：US6080617A

公开(公告)日：2000-06-27

申请号：US950920

申请日：1997-10-15

申请人： Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Shinitirou Hayashi ,  Tooru Nasu ,  Koichi Arita ,  Atsuo Inoue ,  Akihiro Matsuda ,  Masaki Kibe ,  Tatsuo Ootsuki

发明人： Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Shinitirou Hayashi ,  Tooru Nasu ,  Koichi Arita ,  Atsuo Inoue ,  Akihiro Matsuda ,  Masaki Kibe ,  Tatsuo Ootsuki

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/06 ,  H01L27/115 ,  H01L29/92

CPC分类号： H01L27/11502 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/1085 ,  H01L27/11507 ,  H01L28/40 ,  H01L28/55

摘要： A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.

摘要翻译： 一种包括集成电路和电容器的半导体器件。 在该电容器中，在层间绝缘膜上形成独立于集成电路的底电极，电介质膜和顶电极，并且顶电极和底电极通过在保护膜中开口的接触孔与金属互连连接 用于保护电容器的表面。 在这种结构中，顶部电极或底部电极与集成电路的偏置线连接，另一个连接到接地线，使得可以减少外部发射而不必将电容器连接到外部。

公开(公告)号：US06126752A

公开(公告)日：2000-10-03

申请号：US947712

申请日：1997-10-09

申请人： Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Shinitirou Hayashi ,  Tooru Nasu ,  Koichi Arita ,  Atsuo Inoue ,  Akihiro Matsuda ,  Masaki Kibe ,  Tatsuo Ootsuki

发明人： Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Shinitirou Hayashi ,  Tooru Nasu ,  Koichi Arita ,  Atsuo Inoue ,  Akihiro Matsuda ,  Masaki Kibe ,  Tatsuo Ootsuki

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/06 ,  H01L27/115 ,  H01L29/92 ,  B05B5/057

CPC分类号： H01L27/11502 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/1085 ,  H01L27/11507 ,  H01L28/40 ,  H01L28/55

摘要： A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.

摘要翻译： 一种包括集成电路和电容器的半导体器件。 在该电容器中，在层间绝缘膜上形成独立于集成电路的底电极，电介质膜和顶电极，并且顶电极和底电极通过在保护膜中开口的接触孔与金属互连连接 用于保护电容器的表面。 在这种结构中，顶部电极或底部电极与集成电路的偏置线连接，另一个连接到接地线，使得可以减少外部发射而不必将电容器连接到外部。

公开(公告)号：US5717233A

公开(公告)日：1998-02-10

申请号：US778953

申请日：1997-01-06

申请人： Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Shinitirou Hayashi ,  Tooru Nasu ,  Koichi Arita ,  Atsuo Inoue ,  Akihiro Matsuda ,  Masaki Kibe ,  Tatsuo Ootsuki

发明人： Eiji Fujii ,  Yasuhiro Shimada ,  Yasuhiro Uemoto ,  Shinitirou Hayashi ,  Tooru Nasu ,  Koichi Arita ,  Atsuo Inoue ,  Akihiro Matsuda ,  Masaki Kibe ,  Tatsuo Ootsuki

IPC分类号： H01L21/02 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/06 ,  H01L27/115 ,  H01L29/92 ,  H01L29/76

CPC分类号： H01L27/11502 ,  H01L27/0629 ,  H01L27/0688 ,  H01L27/1085 ,  H01L27/11507 ,  H01L28/40 ,  H01L28/55

摘要： A semiconductor device comprising an integrated circuit and a capacitor. In this capacitor, a bottom electrode, a dielectric film and a top electrode are formed, independently of the integrated circuit, on the interlayer insulating film, and the top electrode and bottom electrode are connected with metal interconnections through contact holes opened in the protective film for protecting the surface of the capacitor. In this constitution, either the top electrode or the bottom electrode is connected the bias line of the integrated circuit, and the other is connected to the ground line, so that extraneous emission may be reduced without having to connect the capacitor outside.

摘要翻译： 一种包括集成电路和电容器的半导体器件。 在该电容器中，在层间绝缘膜上形成独立于集成电路的底电极，电介质膜和顶电极，并且顶电极和底电极通过在保护膜中开口的接触孔与金属互连连接 用于保护电容器的表面。 在这种结构中，顶部电极或底部电极与集成电路的偏置线连接，另一个连接到接地线，使得可以减少外部发射而不必将电容器连接到外部。