专利检索 ap:("Eiji KITAGAWA" OR "Tadaomi DAIBOU" OR "Kenji NOMA" OR "Tadashi KAI" OR "Koji YAMAKAWA" OR "Toshihiko NAGASE" OR "Katsuya NISHIYAMA" OR "Koji UEDA" OR "Daisuke WATANABE" OR "Hiroaki YODA" OR "Satoru SANO" OR "Yoshihiro NISHIMURA" OR "Takayuki WATANABE" OR "Yuzo KATO" OR "Akira UEKI") AND inv:"Satoru SANO" 第 1 页

1.

发明申请
SPUTTERING TARGET AND METHOD OF MANUFACTURING MAGNETIC MEMORY USING THE SAME 审中-公开
标题翻译：溅射目标和使用其制造磁记忆的方法

公开(公告)号：US20130056349A1

公开(公告)日：2013-03-07

申请号：US13600812

申请日：2012-08-31

申请人： Eiji KITAGAWA , Tadaomi DAIBOU , Kenji NOMA , Tadashi KAI , Koji YAMAKAWA , Toshihiko NAGASE , Katsuya NISHIYAMA , Koji UEDA , Daisuke WATANABE , Hiroaki YODA , Satoru SANO , Yoshihiro NISHIMURA , Takayuki WATANABE , Yuzo KATO , Akira UEKI

发明人： Eiji KITAGAWA , Tadaomi DAIBOU , Kenji NOMA , Tadashi KAI , Koji YAMAKAWA , Toshihiko NAGASE , Katsuya NISHIYAMA , Koji UEDA , Daisuke WATANABE , Hiroaki YODA , Satoru SANO , Yoshihiro NISHIMURA , Takayuki WATANABE , Yuzo KATO , Akira UEKI

IPC分类号： C23C14/08 , C23C14/35

CPC分类号： C23C14/082 , C23C14/3414 , G11C11/161 , H01L27/228 , H01L43/12

摘要： Provided are a sputtering target including a target main body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and a method of manufacturing a magnetic memory using the sputtering target which improves an MR ratio.

摘要翻译： 提供一种溅射靶，其包括具有MgO作为主要成分并且厚度为3mm以下的靶主体10以及使用该溅射靶的磁性存储器的制造方法，其提高MR比。