公开(公告)号：US20130185928A1

公开(公告)日：2013-07-25

申请号：US13796018

申请日：2013-03-12

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jaewoo LEE ,  Chang Han JE ,  Woo Seok YANG ,  Jongdae KIM

IPC: H04R31/00

CPC classification number: H04R31/00 ,  H04R19/005 ,  H04R19/02

Abstract: Provided is an acoustic sensor. The acoustic sensor includes: a substrate including sidewall portions and a bottom portion extending from a bottom of the sidewall portions; a lower electrode fixed at the substrate and including a concave portion and a convex portion, the concave portion including a first hole on a middle region of the bottom, the convex portion including a second hole on an edge region of the bottom; diaphragms facing the concave portion of the lower electrode, with a vibration space therebetween; diaphragm supporters provided on the lower electrode at a side of the diaphragm and having a top surface having the same height as the diaphragm; and an acoustic chamber provided in a space between the bottom portion and the sidewall portions below the lower electrode.

Abstract translation: 提供了一种声学传感器。 声学传感器包括：基底，其包括侧壁部分和从侧壁部分的底部延伸的底部部分; 固定在所述基板上的下部电极，具有凹部和凸部，所述凹部包括在所述底部的中间区域的第一孔，所述凸部包括在所述底部的边缘区域上的第二孔; 隔膜面向下电极的凹部，其间具有振动空间; 隔膜支撑体设置在隔膜侧面的下电极上，具有与隔膜相同高度的顶表面; 以及设置在下部电极下方的底部和侧壁部之间的空间中的声学室。

公开(公告)号：US20140091388A1

公开(公告)日：2014-04-03

申请号：US14100780

申请日：2013-12-09

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Gi KIM ,  Jin-Gun KOO ,  Seong Wook YOO ,  Jong-Moon PARK ,  Jin Ho LEE ,  KYOUNG IL NA ,  Yil Suk Yang ,  Jongdae KIM

IPC: H01L29/78 ,  H01L29/10

CPC classification number: H01L29/7813 ,  H01L21/2255 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

Abstract: Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the trench; forming a doping region by diffusing the dopant in the trench dopant containing layer into the semiconductor substrate; and removing the trench dopant containing layer.

Abstract translation: 提供半导体器件及其制造方法。 该方法包括：在第一导电类型的半导体衬底中形成沟槽; 在所述沟槽的侧壁和底表面上形成包含第二导电类型的掺杂剂的沟槽掺杂剂层; 通过将所述沟槽掺杂剂含量层中的掺杂剂扩散到所述半导体衬底中来形成掺杂区域; 并去除含沟槽掺杂剂层。