CASIMIR EFFECT MEMORY CELL
    3.
    发明申请
    CASIMIR EFFECT MEMORY CELL 有权
    CASIMIR效应记忆细胞

    公开(公告)号:US20170076822A1

    公开(公告)日:2017-03-16

    申请号:US14853044

    申请日:2015-09-14

    Applicant: Elwha LLC

    CPC classification number: G11C23/00 G11C11/21 G11C11/50 H01H57/00

    Abstract: A digital memory device includes a moveable element that is configured to move between a first stable position and a second stable position, where the moveable element comprises a first conducting area. The digital memory device further includes a second conducting area on the surface of a substrate. At the first stable position of the moveable element, a first gap exists between the first conducting area and the second conducting area. At the second stable position of the moveable element, a second gap that is smaller than the first gap exists between the first conducting area and the second conducting area. In at least the second stable position, an attractive Casimir force between the moveable element and the substrate holds the moveable element in the stable position.

    Abstract translation: 数字存储装置包括被配置为在第一稳定位置和第二稳定位置之间移动的可移动元件,其中可移动元件包括第一导电区域。 数字存储器件还包括在衬底的表面上的第二导电区域。 在可移动元件的第一稳定位置处,在第一导电区域和第二导电区域之间存在第一间隙。 在可移动元件的第二稳定位置处,在第一导电区域和第二导电区域之间存在小于第一间隙的第二间隙。 在至少第二稳定位置中,可移动元件和基板之间的有吸引力的卡西米尔力将可移动元件保持在稳定位置。

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