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公开(公告)号:US11749964B2
公开(公告)日:2023-09-05
申请号:US16911294
申请日:2020-06-24
发明人: Maik Andre Scheller , Anurag Tyagi
CPC分类号: H01S5/0604 , H01S5/0657 , H01S5/141 , H01S5/1833 , H01S5/18311 , H01S5/18333 , H01S5/18336 , H01S5/2086 , H01S5/423 , H01S5/14 , H01S5/18388 , H01S5/34
摘要: A semiconductor light source including a planar optical component that focuses long-wavelength (e.g., infrared) light emitted in a resonant cavity into a nonlinear crystal, which then converts the long-wavelength light into light having a shorter wavelength (e.g., visible light) by frequency doubling. A wavelength-selective reflection layer on the nonlinear crystal reflects the long-wavelength light back into the resonant cavity to form an external cavity and transmits the light having the shorter wavelength out of the external cavity. The resonant cavity includes an active region that emits the long-wavelength light at a high efficiency. The planar optical component includes a micro-lens formed in semiconductor layers or a gradient refractive index lens formed in the nonlinear crystal.
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公开(公告)号:US20180269653A1
公开(公告)日:2018-09-20
申请号:US15592905
申请日:2017-05-11
IPC分类号: H01S5/065 , H01S5/06 , H01S5/026 , H01S5/062 , H01S5/10 , H01S5/04 , H01S5/042 , H01S5/024 , H01S5/0625
CPC分类号: H01S5/0657 , H01S3/0637 , H01S3/08054 , H01S3/082 , H01S3/1112 , H01S3/1616 , H01S3/1636 , H01S5/02453 , H01S5/026 , H01S5/041 , H01S5/042 , H01S5/0604 , H01S5/06236 , H01S5/06246 , H01S5/06251 , H01S5/0651 , H01S5/1007
摘要: An artificial saturable absorber uses additive pulse mode-locking to enable pulse operation of an on-chip laser operation. Four different artificial saturable absorbers are disclosed. The first includes an integrated coupler, two arms each containing some implementation of the end-reflector, and a phase bias element in one arm. The second includes an integrated directional coupler, two integrated waveguide arms, and another integrated coupler as an output. The third includes an integrated birefringent element, integrated birefringent-free waveguide, and integrated polarizer. And the fourth includes a multimode waveguide that allows for different modes to propagate in such a way that the difference in the spatial distribution of intensity causes a nonlinear phase difference between the modes. These are just some examples of an on-chip fully integrated artificial saturable absorber with instantaneous recovery time that allow for generation of sub-femtosecond optical pulses at high repetition rates using passive mode-locking.
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公开(公告)号:US10020634B2
公开(公告)日:2018-07-10
申请号:US14575430
申请日:2014-12-18
发明人: Michael Wanke , Christopher Nordquist , Mark Lee
CPC分类号: H01S5/0261 , H01L29/20 , H01L29/872 , H01L31/022408 , H01L31/0735 , H01L31/125 , H01S5/0604 , H01S5/2054 , H01S5/22 , H01S5/3211 , H01S5/3401 , H01S5/343 , H01S5/4025 , H01S2301/17 , H01S2301/176 , Y02E10/544
摘要: A Schottky diode is monolithically integrated into the core of an infrared semiconductor laser (e.g., a quantum cascade laser) to create a heterodyned infrared transceiver. The internal mode field of the infrared semiconductor laser couples to an embedded Schottky diode and can mix the infrared fields to generate a response at the difference frequency.
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公开(公告)号:US09941660B2
公开(公告)日:2018-04-10
申请号:US14355734
申请日:2012-11-09
申请人: Macquarie University
IPC分类号: H01S3/108 , H01S3/30 , H01S5/06 , H01S5/183 , H01S3/109 , H01S5/14 , H01S3/08 , H01S3/082 , H01S5/04
CPC分类号: H01S5/0604 , H01S3/08027 , H01S3/082 , H01S3/1086 , H01S3/109 , H01S3/30 , H01S5/041 , H01S5/141 , H01S5/142 , H01S5/183
摘要: A tunable lasing device including a vertical external cavity surface emitting laser, adapted to generate a fundamental laser beam in response to pumping from a pump source, said fundamental laser beam having a fundamental wavelength and a fundamental linewidth; a fundamental resonator cavity adapted to resonate the fundamental beam therein; a first optical element located within the fundamental resonator cavity for control of the fundamental linewidth of the fundamental beam; a Raman resonator located at least partially in said fundamental resonator adapted to receive the fundamental beam and comprising therein, a solid state Raman active medium located therein for generating at least a first Stokes beam from the fundamental beam wherein said Raman resonator cavity is adapted to resonate said Stokes beam therein and further adapted to emit an output beam; and further comprising a nonlinear medium located within the Raman resonator cavity for nonlinear frequency conversion of at least one of the beams present in the fundamental or the Raman resonator cavity; said tunable lasing device further comprising an output coupler adapted to emit an output beam, said output beam comprising at least a portion of said frequency converted beam being derived from at least one of the resonating beams in said fundamental or said Raman resonator cavities.
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公开(公告)号:US20180069374A1
公开(公告)日:2018-03-08
申请号:US15693601
申请日:2017-09-01
发明人: Tsutomu KAKUNO , Shinji SAITO , Osamu YAMANE
CPC分类号: H01S5/0604 , H01S5/0206 , H01S5/02415 , H01S5/028 , H01S5/0425 , H01S5/0612 , H01S5/06258 , H01S5/1096 , H01S5/12 , H01S5/1203 , H01S5/22 , H01S5/3402 , H01S5/34313
摘要: A terahertz quantum cascade laser device includes a substrate, q semiconductor stacked body and a first electrode. The semiconductor stacked body includes an active layer and a first clad layer. The active layer is provided on the substrate and is configured to emit infrared laser light by an intersubband optical transition. The first clad layer is provided on the active layer. A ridge waveguide is provided in the semiconductor stacked body. A first distributed feedback region and a second distributed feedback region are provided at an upper surface of the first clad layer to be separated from each other along an extension direction of the ridge waveguide. The first electrode is provided at the upper surface of the first clad layer. A planar size of the first distributed feedback region is smaller than a planar size of the second distributed feedback region.
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公开(公告)号:US20170323716A1
公开(公告)日:2017-11-09
申请号:US15659981
申请日:2017-07-26
发明人: Yung-Ho Alex Chuang , J. Joseph Armstrong , Yujun Deng , Vladimir Dribinski , John Fielden , Jidong Zhang
CPC分类号: H01F17/0006 , G01N21/9501 , G01N21/956 , G01N2021/95676 , G02B21/10 , G02B21/16 , G02B21/361 , G02F1/353 , G02F2001/3507 , G02F2001/354 , H01F17/04 , H01F27/292 , H01S3/0092 , H01S3/10007 , H01S3/10084 , H01S3/1083 , H01S3/109 , H01S5/0071 , H01S5/0085 , H01S5/0604 , H01S5/4012
摘要: A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light. At least one of the frequency mixing, frequency conversion or harmonic generation utilizes an annealed, deuterium-treated or hydrogen-treated CLBO crystal.
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公开(公告)号:US09800018B2
公开(公告)日:2017-10-24
申请号:US15048440
申请日:2016-02-19
IPC分类号: H01S5/06 , H01S5/022 , H01S5/024 , H01S5/028 , H01S5/042 , H01S5/0683 , H01S5/10 , H01S5/125 , H01S5/343 , H01S5/40 , H01S3/23 , H01S5/00 , H01S5/068 , H01S5/50 , H01S5/026 , H01S5/22 , H01S5/187 , H01S5/20
CPC分类号: H01S5/0604 , H01S3/2383 , H01S5/0092 , H01S5/0228 , H01S5/02453 , H01S5/0261 , H01S5/0264 , H01S5/028 , H01S5/0287 , H01S5/0425 , H01S5/06821 , H01S5/0683 , H01S5/1014 , H01S5/1028 , H01S5/1064 , H01S5/125 , H01S5/187 , H01S5/2013 , H01S5/22 , H01S5/34333 , H01S5/4025 , H01S5/4031 , H01S5/50 , H01S2301/166
摘要: A chip scale ultra violet laser source includes a plurality of laser elements on a substrate each including a back cavity mirror, a tapered gain medium, an outcoupler, a nonlinear crystal coupled to the outcoupler with a front facet that has a first coating that is anti-reflectivity (AR) to a fundamental wavelength of the laser element and high reflectivity (HR) to ultra violet wavelengths, and has an exit facet that has a second coating that has HR to a fundamental wavelength of the laser element and AR to the ultra violet wavelengths, a photodetector coupled to the outcoupler, a phase modulator coupled to the photodetector and coupled to the back cavity mirror, and a master laser diode on the substrate coupled to the phase modulator of each laser element. Each laser element emits an ultra violet beamlet and is frequency and phase locked to the master laser diode.
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公开(公告)号:US09748729B2
公开(公告)日:2017-08-29
申请号:US14872890
申请日:2015-10-01
发明人: Yung-Ho Alex Chuang , J. Joseph Armstrong , Yujun Deng , Vladimir Dribinski , John Fielden , Jidong Zhang
IPC分类号: G02F1/39 , H01S3/109 , G02B21/10 , G02B21/16 , G02B21/36 , H01S3/10 , H01S3/108 , H01S5/00 , H01S5/06 , H01S5/40 , G01N21/95 , G01N21/956
CPC分类号: H01F17/0006 , G01N21/9501 , G01N21/956 , G01N2021/95676 , G02B21/10 , G02B21/16 , G02B21/361 , G02F1/353 , G02F2001/3507 , G02F2001/354 , H01F17/04 , H01F27/292 , H01S3/0092 , H01S3/10007 , H01S3/10084 , H01S3/1083 , H01S3/109 , H01S5/0071 , H01S5/0085 , H01S5/0604 , H01S5/4012
摘要: A laser assembly for generating laser output light at an output wavelength of approximately 183 nm includes a fundamental laser, an optical parametric system (OPS), a fifth harmonic generator, and a frequency mixing module. The fundamental laser generates fundamental light at a fundamental frequency. The OPS generates a down-converted signal at a down-converted frequency. The fifth harmonic generator generates a fifth harmonic of the fundamental light. The frequency mixing module mixes the down-converted signal and the fifth harmonic to produce the laser output light at a frequency equal to a sum of the fifth harmonic frequency and the down-converted frequency. The OPS generates the down-converted signal by generating a down-converted seed signal at the down-converted frequency, and then mixing the down-converted seed signal with a portion of the fundamental light. At least one of the frequency mixing, frequency conversion or harmonic generation utilizes an annealed, deuterium-treated or hydrogen-treated CLBO crystal.
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公开(公告)号:US09543731B2
公开(公告)日:2017-01-10
申请号:US14660231
申请日:2015-03-17
发明人: Ricardo Rosales , Dieter Bimberg
CPC分类号: H01S3/0057 , H01S3/067 , H01S5/0287 , H01S5/0604 , H01S5/06216 , H01S5/0657 , H01S5/2036 , H01S5/3213 , H01S5/3216 , H01S2301/166 , H01S2301/18
摘要: An embodiment of the invention relates to a method for generating short optical pulses comprising the steps of: operating a single section semiconductor laser in a nonlinear regime to emit chirped optical pulses at an output facet of the laser cavity, and compressing the chirped optical pulses outside the laser cavity using a dispersive element in order to generate the short optical pulses.
摘要翻译: 本发明的实施例涉及一种用于产生短光脉冲的方法,包括以下步骤:以非线性方式操作单段半导体激光器,以在激光腔的输出端发射啁啾的光脉冲,并将啁啾的光脉冲压缩在外 激光腔使用分散元件以产生短的光脉冲。
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公开(公告)号:US09484715B2
公开(公告)日:2016-11-01
申请号:US14888999
申请日:2014-05-19
发明人: Kazuue Fujita , Tadataka Edamura , Naota Akikusa
CPC分类号: H01S5/3402 , H01S5/0208 , H01S5/0604 , H01S5/1096 , H01S5/12 , H01S5/309 , H01S2302/02
摘要: A quantum cascade laser is configured with a semiconductor substrate and first and second active layers provided in series on the substrate. A unit laminate structure of the first active layer has a subband level structure having an emission upper level and an emission lower level, and is configured so as to be able to generate light of a first frequency ω1, a unit laminate structure of the second active layer has a subband level structure having a first emission upper level, a second emission upper level, and a plurality of emission lower levels, and is configured so as to be able to generate light of a second frequency ω2, and light of a difference frequency ω is generated by difference frequency generation from the light of the first frequency ω1 and the light of the second frequency ω2.
摘要翻译: 量子级联激光器被配置为具有半导体衬底和在衬底上串联设置的第一和第二有源层。 第一有源层的单元层叠结构具有发射上限和发射较低电平的子带电平结构,并且被配置为能够产生第一频率ω1的光,第二有源层的单位层叠结构 层具有具有第一发射上限电平,第二发射上电平和多个发射较低电平的子带电平结构,并且被配置为能够产生第二频率ω2的光,以及差频率 ω由第一频率ω1的光和第二频率ω2的光的差频产生产生。
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