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公开(公告)号：US08778210B2
公开(公告)日：2014-07-15
申请号：US12520138
申请日：2007-12-21
申请人： Emanuel I. Cooper , Eileen R. Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
发明人： Emanuel I. Cooper , Eileen R. Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
CPC分类号： H01L21/31111 , B65D85/70 , C09K13/08 , G03F7/422 , H01L21/0206 , H01L2924/0002 , H01L2924/00
摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.
摘要翻译： 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。
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公开(公告)号：US20100176082A1
公开(公告)日：2010-07-15
申请号：US12520138
申请日：2007-12-21
申请人： Emanuel I. Cooper , Eileen Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
发明人： Emanuel I. Cooper , Eileen Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
IPC分类号： H05K3/00 , C01B33/107 , C09K13/08
CPC分类号： H01L21/31111 , B65D85/70 , C09K13/08 , G03F7/422 , H01L21/0206 , H01L2924/0002 , H01L2924/00
摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.
摘要翻译： 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。
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3.发明申请Copper passivating post-chemical mechanical polishing cleaning composition and method of use 审中-公开铜钝化后化学机械抛光清洗组合物及其使用方法公开(公告)号：US20080076688A1
公开(公告)日：2008-03-27
申请号：US11524619
申请日：2006-09-21
申请人： Jeffrey A. Barnes , Elizabeth Walker , Darryl W. Peters , Kyle Bartosh , Ewa R. Oldak , Kevin P. Yanders
发明人： Jeffrey A. Barnes , Elizabeth Walker , Darryl W. Peters , Kyle Bartosh , Ewa R. Oldak , Kevin P. Yanders
CPC分类号： C11D11/0047 , C11D3/0042 , C11D3/2079 , C11D3/28 , C11D3/30 , C11D3/34 , C11D7/265 , C11D7/32 , C11D7/3209 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D7/36 , H01L21/02063 , H01L21/02074
摘要： Alkaline aqueous cleaning compositions and processes for cleaning post-chemical mechanical polishing (CMP) residue, post-etch residue and/or contaminants from a microelectronic device having said residue and contaminants thereon. The alkaline aqueous cleaning compositions include amine, passivating agent, and water. The composition achieves highly efficacious cleaning of the residue and contaminant material from the microelectronic device while simultaneously passivating the metal interconnect material.
摘要翻译： 碱性水性清洁组合物和用于从具有所述残留物和污染物的微电子装置清洁化学后机械抛光（CMP）残留物，蚀刻后残留物和/或污染物的方法。 碱性水性清洗组合物包括胺，钝化剂和水。 该组合物可实现对微电子器件的残留物和污染物质的高效清洁，同时钝化金属互连材料。
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公开(公告)号：US20100056409A1
公开(公告)日：2010-03-04
申请号：US11814714
申请日：2006-01-26
申请人： Elizabeth Walker , Shahri Naghshineh , Jeffrey A. Barnes , Ewa Oldak , Darryl W. Peters , Kevin P. Yanders
发明人： Elizabeth Walker , Shahri Naghshineh , Jeffrey A. Barnes , Ewa Oldak , Darryl W. Peters , Kevin P. Yanders
IPC分类号： C11D7/32
CPC分类号： H01L21/02071 , C11D7/06 , C11D7/26 , C11D7/264 , C11D7/265 , C11D7/32 , C11D7/3218 , C11D11/0047 , H01L21/02063 , H01L21/02068 , H01L21/02074
摘要： Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of microelectronic device wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen.
摘要翻译： 用于微电子器件制造用于诸如微电子器件前体结构的晶片衬底的表面制备和/或清洁的组合物。 组合物可用于处理具有或将要进一步加工以包括铜金属化的晶片，例如在诸如表面处理，预镀清洗，后蚀刻清洁和后化学机械抛光 清洁微电子器件晶圆。 组合物包含（i）链烷醇胺，（ii）季铵氢氧化物和（iii）络合剂，并且是储存稳定的，以及在暴露于氧气时不变暗和降解。
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5.发明授权Semiconductor wafer cleaning and rinsing techniques using re-ionized water and tank overflow 失效半导体晶圆清洗和冲洗技术使用水和罐溢流
公开(公告)号：US5336371A
公开(公告)日：1994-08-09
申请号：US34938
申请日：1993-03-18
IPC分类号： H01L21/304 , G03F7/42 , H01L21/02 , H01L21/306 , H01L21/3213 , H01L21/00 , B44C1/22 , C03C15/00
CPC分类号： H01L21/02071 , G03F7/422 , H01L21/02052
摘要： In a wafer fabrication process in which a photoresist stripper must be removed from the surface of a semiconductor wafer, the photoresist stripper is rinsed by inserting the wafer in a vessel (23, FIG. 3) filled with water and simultaneously pumping carbon dioxide and water into the vessel to cause the water to overflow the vessel. Preferably, the wafer is contained within the vessel for at least five minutes, and, during the rinsing step, the water completely fills the vessel and overflows at a rate of at least fifty percent of the volume of the vessel each minute. We have found that this method of rinsing photoresist stripper from semiconductor wafers significantly reduces or eliminates the incidence of corrosion pitting on aluminum conductors (12, FIG. 1) of the wafer (11).
摘要翻译： 在其中必须从半导体晶片的表面去除光致抗蚀剂剥离器的晶片制造工艺中，通过将晶片插入装满水的容器（23，图3）中并同时泵送二氧化碳和水来冲洗光致抗蚀剂剥离器 进入船只以使水溢出船只。 优选地，将晶片包含在容器内至少五分钟，并且在漂洗步骤期间，水完全填充容器并以每分钟至少容积百分之五十的容器的速率溢流。 我们已经发现，从半导体晶片冲洗光致抗蚀剂剥离剂的这种方法显着地减少或消除了晶片（11）的铝导体（图1）上的腐蚀点蚀的发生。
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公开(公告)号：US07922823B2
公开(公告)日：2011-04-12
申请号：US11814714
申请日：2006-01-26
申请人： Elizabeth Walker , Shahri Naghshineh , Jeffrey A. Barnes , Ewa Oldak , Darryl W. Peters , Kevin P. Yanders
发明人： Elizabeth Walker , Shahri Naghshineh , Jeffrey A. Barnes , Ewa Oldak , Darryl W. Peters , Kevin P. Yanders
IPC分类号： C11D7/32
CPC分类号： H01L21/02071 , C11D7/06 , C11D7/26 , C11D7/264 , C11D7/265 , C11D7/32 , C11D7/3218 , C11D11/0047 , H01L21/02063 , H01L21/02068 , H01L21/02074
摘要： Compositions useful in microelectronic device manufacturing for surface preparation and/or cleaning of wafer substrates such as microelectronic device precursor structures. The compositions can be employed for processing of wafers that have, or are intended to be further processed to include, copper metallization, e.g., in operations such as surface preparation, pre-plating cleaning, post-etching cleaning, and post-chemical mechanical polishing cleaning of microelectronic device wafers. The compositions contain (i) alkanolamine, (ii) quaternary ammonium hydroxide and (iii) a complexing agent, and are storage-stable, as well as non-darkening and degradation-resistant in exposure to oxygen.
摘要翻译： 用于微电子器件制造用于诸如微电子器件前体结构的晶片衬底的表面制备和/或清洁的组合物。 组合物可用于处理具有或将要进一步加工以包括铜金属化的晶片，例如在诸如表面处理，预镀清洗，后蚀刻清洁和后化学机械抛光 清洁微电子器件晶圆。 组合物包含（i）链烷醇胺，（ii）季铵氢氧化物和（iii）络合剂，并且是储存稳定的，以及在暴露于氧气时不变暗和降解。
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公开(公告)号：US20080200361A1
公开(公告)日：2008-08-21
申请号：US12111469
申请日：2008-04-29
IPC分类号： C11D3/30
CPC分类号： H01L21/02074 , C11D7/06 , C11D7/3209 , C11D7/3218 , C11D11/0047 , C23F1/34 , C23G1/18 , G03F7/425
摘要： A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10.
摘要翻译： 提供清洁溶液用于清洗含金属的微电子基板，特别是用于后蚀刻，经由形成和后CMP清洁。 清洗溶液由季铵氢氧化物，有机胺和水组成。 优选的清洁溶液由四甲基氢氧化铵，单乙醇胺和水组成。 清洗液的pH值大于10。
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8.发明授权Aqueous cleaner with low metal etch rate comprising alkanolamine and tetraalkylammonium hydroxide 有权具有低金属蚀刻速率的水性清洁剂，其包含链烷醇胺和四烷基氢氧化铵公开(公告)号：US07365045B2
公开(公告)日：2008-04-29
申请号：US11094113
申请日：2005-03-30
CPC分类号： H01L21/02074 , C11D7/06 , C11D7/3209 , C11D7/3218 , C11D11/0047 , C23F1/34 , C23G1/18 , G03F7/425
摘要： A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10.
摘要翻译： 提供清洁溶液用于清洗含金属的微电子基板，特别是用于后蚀刻，经由形成和后CMP清洁。 清洗溶液由季铵氢氧化物，有机胺和水组成。 优选的清洁溶液由四甲基氢氧化铵，单乙醇胺和水组成。 清洗液的pH值大于10。
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