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公开(公告)号：US20100176082A1
公开(公告)日：2010-07-15
申请号：US12520138
申请日：2007-12-21
申请人： Emanuel I. Cooper , Eileen Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
发明人： Emanuel I. Cooper , Eileen Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
IPC分类号： H05K3/00 , C01B33/107 , C09K13/08
CPC分类号： H01L21/31111 , B65D85/70 , C09K13/08 , G03F7/422 , H01L21/0206 , H01L2924/0002 , H01L2924/00
摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.
摘要翻译： 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。
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公开(公告)号：US08778210B2
公开(公告)日：2014-07-15
申请号：US12520138
申请日：2007-12-21
申请人： Emanuel I. Cooper , Eileen R. Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
发明人： Emanuel I. Cooper , Eileen R. Sparks , William R. Bowers , Mark A. Biscotto , Kevin P. Yanders , Michael B. Korzenski , Prerna Sonthalia , Nicole E. Thomas
CPC分类号： H01L21/31111 , B65D85/70 , C09K13/08 , G03F7/422 , H01L21/0206 , H01L2924/0002 , H01L2924/00
摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.
摘要翻译： 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。
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公开(公告)号：US20140038420A1
公开(公告)日：2014-02-06
申请号：US13877777
申请日：2011-10-06
申请人： Tianniu Chen , Nicole E. Thomas , Steven Lippy , Jeffrey A. Barnes , Emanuel I. Cooper , Peng Zhang
发明人： Tianniu Chen , Nicole E. Thomas , Steven Lippy , Jeffrey A. Barnes , Emanuel I. Cooper , Peng Zhang
IPC分类号： H01L21/8238 , H01L21/28
CPC分类号： H01L21/28088 , B81C1/00539 , H01L21/28079 , H01L21/32134 , H01L21/823842
摘要： A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.
摘要翻译： 一种用于从其上具有所述材料的微电子器件相对于第二金属栅极材料（例如，氮化钽）选择性地去除第一金属栅极材料（例如氮化钛）的去除组合物和工艺。 除去组合物可以包括氟化物或者基本上不含氟化物。 衬底优选地包括高k /金属栅极集成方案。
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公开(公告)号：US09831088B2
公开(公告)日：2017-11-28
申请号：US13877777
申请日：2011-10-06
申请人： Tianniu Chen , Nicole E. Thomas , Steven Lippy , Jeffrey A. Barnes , Emanuel I. Cooper , Peng Zhang
发明人： Tianniu Chen , Nicole E. Thomas , Steven Lippy , Jeffrey A. Barnes , Emanuel I. Cooper , Peng Zhang
IPC分类号： H01L21/461 , H01L21/28 , B81C1/00 , H01L21/3213 , H01L21/8238
CPC分类号： H01L21/28088 , B81C1/00539 , H01L21/28079 , H01L21/32134 , H01L21/823842
摘要： A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.
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