公开(公告)号：US08778210B2

公开(公告)日：2014-07-15

申请号：US12520138

申请日：2007-12-21

申请人： Emanuel I. Cooper ,  Eileen R. Sparks ,  William R. Bowers ,  Mark A. Biscotto ,  Kevin P. Yanders ,  Michael B. Korzenski ,  Prerna Sonthalia ,  Nicole E. Thomas

发明人： Emanuel I. Cooper ,  Eileen R. Sparks ,  William R. Bowers ,  Mark A. Biscotto ,  Kevin P. Yanders ,  Michael B. Korzenski ,  Prerna Sonthalia ,  Nicole E. Thomas

IPC分类号： C03C15/00 ,  C03C25/68 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C09K13/06

CPC分类号： H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.

摘要翻译： 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。

公开(公告)号：US20100176082A1

公开(公告)日：2010-07-15

申请号：US12520138

申请日：2007-12-21

申请人： Emanuel I. Cooper ,  Eileen Sparks ,  William R. Bowers ,  Mark A. Biscotto ,  Kevin P. Yanders ,  Michael B. Korzenski ,  Prerna Sonthalia ,  Nicole E. Thomas

发明人： Emanuel I. Cooper ,  Eileen Sparks ,  William R. Bowers ,  Mark A. Biscotto ,  Kevin P. Yanders ,  Michael B. Korzenski ,  Prerna Sonthalia ,  Nicole E. Thomas

IPC分类号： H05K3/00 ,  C01B33/107 ,  C09K13/08

CPC分类号： H01L21/31111 ,  B65D85/70 ,  C09K13/08 ,  G03F7/422 ,  H01L21/0206 ,  H01L2924/0002 ,  H01L2924/00

摘要： Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100° C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 Å min−1.

摘要翻译： 用于相对于多晶硅，氧化硅材料和/或硅化物材料从其上具有相同的微电子器件选择性去除氮化硅材料的组合物。 除去组合物包括氟硅酸，硅酸和至少一种有机溶剂。 典型的工艺温度小于约100℃，氮化物与氧化物蚀刻的典型选择性为约200:1至约2000:1。 在典型的工艺条件下，镍基硅化物以及钛和钽氮化物在很大程度上不受影响，多晶硅蚀刻速率小于约1埃min -1。

公开(公告)号：US20110117751A1

公开(公告)日：2011-05-19

申请号：US12921262

申请日：2009-03-06

申请人： Prerna Sonthalia ,  Emanuel I. Cooper ,  David Minsek ,  Peng Zhang ,  Melissa A. Petruska ,  Brittany Serke ,  Trace Quentin Hurd

发明人： Prerna Sonthalia ,  Emanuel I. Cooper ,  David Minsek ,  Peng Zhang ,  Melissa A. Petruska ,  Brittany Serke ,  Trace Quentin Hurd

IPC分类号： H01L21/306 ,  C09K13/00 ,  C09K13/06

CPC分类号： C11D7/10 ,  C11D1/62 ,  C11D3/2044 ,  C11D3/2068 ,  C11D3/33 ,  C11D3/3719 ,  C11D7/263 ,  C11D7/3245 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31111

摘要： Composition and method to remove undoped silicon-containing materials from microelectronic devices at rates greater than or equal to the removal of doped silicon-containing materials.

摘要翻译： 从微电子器件以大于或等于去除掺杂含硅材料的速率除去未掺杂的含硅材料的组合物和方法。

公开(公告)号：US20130280123A1

公开(公告)日：2013-10-24

申请号：US13819249

申请日：2011-08-26

申请人： Tianniu Chen ,  Steven Bilodeau ,  Chimin Sheu ,  Mutsumi Nakanishi ,  Masahiro Matsuoka ,  Fumio Nakayama ,  Peng Zhang ,  Michael B. Korzenski ,  Emanuel I. Cooper ,  Kate Veccharelli ,  Makonnen Payne

发明人： Tianniu Chen ,  Steven Bilodeau ,  Chimin Sheu ,  Mutsumi Nakanishi ,  Masahiro Matsuoka ,  Fumio Nakayama ,  Peng Zhang ,  Michael B. Korzenski ,  Emanuel I. Cooper ,  Kate Veccharelli ,  Makonnen Payne

IPC分类号： C09C3/08

CPC分类号： C09C3/08 ,  B81C1/00619 ,  B81C1/00928 ,  H01L21/02082 ,  H01L21/302 ,  H01L21/306

摘要： Methods of reducing the capillary forces experienced by fragile high aspect ratio structures during drying to substantially prevent damage to said high aspect ratio structures during drying. They include modifying the surface of the high aspect ratio structures such that the forces are sufficiently minimized and as such less than 10% of the high aspect ratio features will have bent or collapsed during drying of the structure having said features thereon.

摘要翻译： 在干燥期间减少易碎的高纵横比结构所经受的毛细作用力的方法，以基本上防止在干燥过程中对所述高纵横比结构的损坏。 它们包括改变高纵横比结构的表面，使得力被充分地最小化，并且因此在其具有所述特征的结构的干燥期间，小于10％的高纵横比特征将具有弯曲或折叠。

公开(公告)号：US20100163788A1

公开(公告)日：2010-07-01

申请号：US12520121

申请日：2007-12-21

申请人： Pamela Visintin ,  Ping Jiang ,  Michael B. Korzenski ,  David W. Minsek ,  Emanuel I. Cooper ,  Ming-Ann Hsu ,  Kristin A. Fletcher

发明人： Pamela Visintin ,  Ping Jiang ,  Michael B. Korzenski ,  David W. Minsek ,  Emanuel I. Cooper ,  Ming-Ann Hsu ,  Kristin A. Fletcher

IPC分类号： C09K13/08 ,  C09K13/00

CPC分类号： C11D3/0073 ,  C09K13/00 ,  C09K13/08 ,  C11D1/62 ,  C11D3/042 ,  C11D3/245 ,  C11D3/43 ,  C11D7/08 ,  C11D7/28 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02063

摘要： Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.

摘要翻译： 用于从其上具有所述残余物的微电子器件清洁后等离子体蚀刻残留物的清洁组合物和方法。 该组合物可实现对来自微电子器件的残余物质（包括含钛，含铜，含钨和/或含钴）蚀刻后残留物的高效清洁，同时不损坏层间电介质，金属互连材料， 和/或也存在于其上的封盖层。 此外，该组合物可用于从其上具有其的微电子器件去除氮化钛层。

公开(公告)号：US20140038420A1

公开(公告)日：2014-02-06

申请号：US13877777

申请日：2011-10-06

申请人： Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

发明人： Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

IPC分类号： H01L21/8238 ,  H01L21/28

CPC分类号： H01L21/28088 ,  B81C1/00539 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

摘要： A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

摘要翻译： 一种用于从其上具有所述材料的微电子器件相对于第二金属栅极材料（例如，氮化钽）选择性地去除第一金属栅极材料（例如氮化钛）的去除组合物和工艺。 除去组合物可以包括氟化物或者基本上不含氟化物。 衬底优选地包括高k /金属栅极集成方案。

公开(公告)号：US09831088B2

公开(公告)日：2017-11-28

申请号：US13877777

申请日：2011-10-06

申请人： Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

发明人： Tianniu Chen ,  Nicole E. Thomas ,  Steven Lippy ,  Jeffrey A. Barnes ,  Emanuel I. Cooper ,  Peng Zhang

IPC分类号： H01L21/461 ,  H01L21/28 ,  B81C1/00 ,  H01L21/3213 ,  H01L21/8238

CPC分类号： H01L21/28088 ,  B81C1/00539 ,  H01L21/28079 ,  H01L21/32134 ,  H01L21/823842

摘要： A removal composition and process for selectively removing a first metal gate material (e.g., titanium nitride) relative to a second metal gate material (e.g., tantalum nitride) from a microelectronic device having said material thereon. The removal composition can include fluoride or alternatively be substantially devoid of fluoride. The substrate preferably comprises a high-k/metal gate integration scheme.

公开(公告)号：US20130303420A1

公开(公告)日：2013-11-14

申请号：US13878684

申请日：2011-10-13

申请人： Emanuel I. Cooper ,  George Gabriel Totir ,  Makonnen Payne

发明人： Emanuel I. Cooper ,  George Gabriel Totir ,  Makonnen Payne

IPC分类号： C11D3/00

CPC分类号： C11D3/0073 ,  C11D3/046 ,  C11D3/26 ,  C11D3/3942 ,  C11D3/3947 ,  C11D11/0047 ,  G03F7/423 ,  G03F7/425 ,  H01L21/02063 ,  H01L21/02074 ,  H01L21/76814

摘要： Cleaning compositions and processes for cleaning residue from a microelectronic device having said residue thereon. The composition comprises at least one amine, at least one oxidizing agent, water, and at least one borate species and achieves highly efficacious cleaning of the residue material, including post-ash residue, post-etch residue, post-CMP residue, particles, organic contaminants, metal ion contaminants, and combinations thereof from the microelectronic device while simultaneously not damaging the titanium nitride layers and low-k dielectric materials also present on the device.

摘要翻译： 用于从其上具有所述残余物的微电子器件清洁残留物的清洁组合物和方法。 组合物包含至少一种胺，至少一种氧化剂，水和至少一种硼酸盐物质，并且实现残余物质的高效清洁，包括后灰渣残留物，蚀刻后残留物，CMP后残留物，颗粒， 有机污染物，金属离子污染物及其组合，同时不损坏也存在于该装置上的氮化钛层和低k电介质材料。

公开(公告)号：US20120135590A1

公开(公告)日：2012-05-31

申请号：US13306616

申请日：2011-11-29

申请人： Bryan C. Hendrix ,  Emanuel I. Cooper

发明人： Bryan C. Hendrix ,  Emanuel I. Cooper

IPC分类号： H01L21/28

CPC分类号： H01L29/66545 ,  H01L21/32135

摘要： A method of fabricating a semiconductor device, comprising carrying out a gate last process including forming a dummy gate of polysilicon, and thereafter removing the dummy gate for replacement by a metal gate, wherein the dummy gate is removed by XeF2 etch removal.

摘要翻译： 一种制造半导体器件的方法，包括执行包括形成多晶硅的虚拟栅极的栅极最后工艺，然后通过金属栅极去除用于替换的虚拟栅极，其中通过XeF2蚀刻去除去除伪栅极。

公开(公告)号：US07868410B2

公开(公告)日：2011-01-11

申请号：US12040350

申请日：2008-02-29

申请人： Philippe M. Vereecken ,  Veeraraghavan S. Basker ,  Cyril Cabral, Jr. ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Martin M. Frank ,  Rajarao Jammy ,  Vamsi Krishna Paruchuri ,  Katherine L. Saenger ,  Xiaoyan Shao

发明人： Philippe M. Vereecken ,  Veeraraghavan S. Basker ,  Cyril Cabral, Jr. ,  Emanuel I. Cooper ,  Hariklia Deligianni ,  Martin M. Frank ,  Rajarao Jammy ,  Vamsi Krishna Paruchuri ,  Katherine L. Saenger ,  Xiaoyan Shao

IPC分类号： H01L21/70

CPC分类号： H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

摘要： A method is provided for electroplating a gate metal or other conducting or semiconducting material directly on a dielectric such as a gate dielectric. The method involves selecting a substrate, dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be passed from the substrate through the dielectric layer into the electrolyte solution or melt. Methods are also provided for electrochemical modification of dielectrics utilizing through-dielectric current flow.

摘要翻译： 提供了一种用于将栅极金属或其它导电或半导体材料直接电镀在诸如栅极电介质的电介质上的方法。 该方法包括选择衬底，电介质层和电解质溶液或熔体，其中衬底，电介质层和电解质溶液或熔体的组合允许电化学电流从衬底通过电介质层进入电解质溶液或 熔化。 还提供了利用电介质电流流动的电介质电化学修饰方法。