摘要:
The invention relates to a method of automatically shifting from the fabrication of an EPROM cell to the fabrication of a ROM cell, which method is specifically intended for semiconductor electronic circuits having a resident memory and is of the type wherein the structure of at least one memory cell transistor is defined on a semiconductor substrate using photolithographic techniques including an active area and a channel region, the cell being adapted to acquire a logic state selected by the user. Advantageously, the conductivity of the active area is changed to suit the logical contents that the cell is intended to contain.
摘要:
A braking band with a remarkable capacity for improved cooling, for use in disk-brake disks, comprises two plates coaxial with an axis, facing one another, and spaced apart to form a space in which an air-flow takes place from the axis towards the outer side of the band, the plates having facing surfaces from which pillar-like elements extend, transversely, to connect the plates, the pillar-like elements being distributed in circular rings or rows concentric with the plates so as to be distributed uniformly in the space, those pillar-like elements which are disposed in inside rows of the braking band having rhombic cross-sections. The rhombic cross-sections of the pillar-like elements which are in inside rows of the band are symmetrical with respect to an axis transverse the direction of flow and each element for connection between the plates extends from one plate to the other whilst remaining within the space.
摘要:
The circuit includes an input register (RI); an output register (RU); an AND plane; and an OR plane. The AND plane has vertical lines (Y), which are controlled by the input register, and horizontal lines (L), which include transistors (TA) arranged in series and controlled by respective vertical lines. The horizontal lines are connected to ground by normally-off transistors (TV) and to the power supply by normally-on transistors (TP). These transistors (TV, TP) are controlled by a first clock signal (CK1.about.). The OR plane has horizontal lines (S) and vertical lines (U). The vertical lines (U) of the OR plane contain normally-off transistors (TO) which are controlled by respective horizontal lines of the OR plane. Horizontal lines of the AND plane and horizontal lines of the OR plane are connected by respective pairs of normally-on transistors (TB) and normally-off transistors (TC) arranged in series between the power supply and ground. In each pair, the normally-on transistor is controlled by a horizontal line of the AND plane, and the normally-off transistor is controlled by a second clock signal (CK2). A horizontal line of the OR plane is connected to the node between the pair. The vertical lines of the OR plane are connected to the power supply by respective transistors (TR), which are controlled by a third clock signal (CK2.about.), and to the output register by pass transistors (P), which are controlled by a fourth clock signal (CK3.about.).
摘要:
The invention relates to a method and tools for producing a braking band of a disk-brake disk by casting, in which the disk comprises at least two plates connected to one another by connecting elements forming an internal air-duct for the cooling of the braking band. With the method and the tools, a disk is produced in which at least one of the plates has, in its surface defining the air-ducts, at least one groove having a cross-section which becomes wider towards the air-duct.
摘要:
The invention relates to a method and tools for producing a braking band (2) of a disk-brake disk (1) by casting, in which the disk comprises at least two plates (3, 3′) connected to one another by connecting elements (4) forming an internal air-duct (7) for the cooling of the braking band (2). With the method and the tools, a disk is produced in which at least one of the plates (3, 3′) has, in its surface (8, 8′) defining the air-ducts (7), at least one groove (10, 10′) having a cross-section which becomes wider towards the air-duct.
摘要:
ROM memories made in MOS or CMOS technology with LDD cells may be programmed advantageously in a relatively advanced stage of fabrication by decoupling an already formed drain region from the channel region of cells to be permanently made nonconductive (programmed) by implanting a dopant in an amount sufficient to invert the type of conductivity in a portion of the drain region adjacent to the channel region. In CMOS processes, the programming mask may be a purposely modified mask commonly used for implanting source/drain regions of transistors of a certain type of conductivity. By using high-energy implantation and a dedicated mask, the programming may be effected at even later stages of the fabrication process.
摘要:
ROM memories made in MOS or CMOS technology with LDD cells may be programmed advantageously in a relatively advanced stage of fabrication by decoupling an already formed drain region from the channel region of cells to be permanently made nonconductive (programmed) by implanting a dopant in an amount sufficient to invert the type of conductivity in a portion of the drain region adjacent to the channel region. In CMOS processes, the programming mask may be a purposely modified mask commonly used for implanting source/drain regions of transistors of a certain type of conductivity. By using high-energy implantation and a dedicated mask, the programming may be effected at even later stages of the fabrication process.
摘要:
A braking band for a disk-brake disk which is capable of exceptionally quiet braking comprises at least two plates connected to one another by connecting elements, in which the space between the plates forms an internal air-duct for the cooling of the braking band. At least one of the plates has, in one of its surfaces defining the air-ducts, at least one groove which extends along at least a portion of an orbit around the axis of symmetry of the disk and the cross-section of which becomes wider towards the air-duct.