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    Wafer cleaning apparatus and related method
    5.
    发明申请
    Wafer cleaning apparatus and related method 审中-公开
    晶圆清洗装置及相关方法

    公开(公告)号：US20070181148A1

    公开(公告)日：2007-08-09

    申请号：US11642893

    申请日：2006-12-21

    申请人： Min-Sang Yun ,  Kwon Son ,  Jae-Hyung Jung ,  Hee-Chan Jung ,  Ki-Ryong Choi ,  Byung-Joo Park ,  Kang-Young Kim

    发明人： Min-Sang Yun ,  Kwon Son ,  Jae-Hyung Jung ,  Hee-Chan Jung ,  Ki-Ryong Choi ,  Byung-Joo Park ,  Kang-Young Kim

    IPC分类号： C23G1/00 ,  B08B3/00 ,  B08B7/00

    CPC分类号： H01L21/67051 ,  H01L21/02052

    摘要： Embodiments of the invention provide a semiconductor wafer cleaning apparatus and a related method. In one embodiment, the invention provides a semiconductor wafer cleaning apparatus comprising a wafer stage adapted to support a wafer; a first cleaning unit adapted to spray a first cleaning solution onto the wafer to remove particles from the wafer, wherein the first cleaning solution prevents static electricity from being generated on the surface of the wafer; and a second cleaning unit adapted to provide a second cleaning solution onto the wafer and oscillate a quartz rod to remove particles from the wafer, wherein the second cleaning solution makes a surface of the wafer hydrophilic.

    摘要翻译： 本发明的实施例提供一种半导体晶片清洗装置及相关方法。 在一个实施例中，本发明提供一种半导体晶片清洁设备，其包括适于支撑晶片的晶片台; 第一清洁单元，其适于将第一清洁溶液喷射到所述晶片上以从所述晶片去除颗粒，其中所述第一清洁溶液防止在所述晶片的表面上产生静电; 以及第二清洁单元，其适于将第二清洁溶液提供到所述晶片上并振荡石英棒以从所述晶片去除颗粒，其中所述第二清洁溶液使所述晶片的表面具有亲水性。

    Method for fabricating mixed signal semiconductor device
    6.
    发明授权
    Method for fabricating mixed signal semiconductor device 失效
    混合信号半导体器件的制造方法

    公开(公告)号：US06337242B1

    公开(公告)日：2002-01-08

    申请号：US09551527

    申请日：2000-04-18

    申请人： Byung-Joo Park

    发明人： Byung-Joo Park

    IPC分类号： H01L218246

    CPC分类号： H01L27/0629

    摘要： A method for fabricating a mixed signal semiconductor device is disclosed. This method includes a step for dividing a semiconductor substrate into an active region and a field region, step for forming a gate oxide film on an upper surface of the semiconductor substrate, a step for forming a first polysilicon film on an upper surface of the gate oxide film, a step for forming a silicon nitride film on an upper surface of the gate oxide film, a step for patterning the silicon nitride film and exposing a first polysilicon corresponding to the upper portion of the field region, a step for implanting an impurity ion into the first polysilicon film, a step for forming a capacitor oxide film on an upper and lateral surface of the patterned silicon nitride film and on an upper surface of the exposed first polysilicon film, a step for forming a second polysilicon film on an upper surface of the capacitor oxide film, a step for removing the second polysilicon film and the capacitor oxide film formed on the upper surface of the silicon nitride film and planerizing the remaining second polysilicon film, capacitor oxide film and silicon nitride film, a step for patterning the silicon nitride film, first polysilicon film and second polysilicon film, a step for etching the silicon nitride film, and a step for forming a LDD(Lightly Doped Drain) in the active region, for thereby implementing a simpler fabrication process and decreasing a failed product.

    摘要翻译： 公开了一种制造混合信号半导体器件的方法。 该方法包括将半导体衬底分成有源区和场区的步骤，在半导体衬底的上表面上形成栅极氧化膜的步骤，在栅极的上表面上形成第一多晶硅膜的步骤 氧化膜，在栅极氧化膜的上表面上形成氮化硅膜的步骤，对氮化硅膜进行图案化和曝光对应于场区的上部的第一多晶硅的工序，用于注入杂质的工序 离子注入到第一多晶硅膜中，在图案化氮化硅膜的上表面和外表面上以及暴露的第一多晶硅膜的上表面上形成电容器氧化膜的步骤，在上部形成第二多晶硅膜的步骤 电容器氧化膜的表面，去除形成在氮化硅膜的上表面上的第二多晶硅膜和电容器氧化膜的步骤，并且使r 形成第二多晶硅膜，电容器氧化膜和氮化硅膜，用于图案化氮化硅膜，第一多晶硅膜和第二多晶硅膜的步骤，用于蚀刻氮化硅膜的步骤，以及用于形成LDD（轻掺杂漏极 ），从而实现更简单的制造过程并减少失败的产品。