摘要:
Automatic exposure adjusting device considers the image on a pixel-by-pixel basis. Each pixel is characterized according to its most significant bits. After the pixels are characterized, the number of pixels in any particular group is counted. That counting is compared with thresholds which set whether the image is over exposed, under exposed, and can optionally also determine if the image is seriously over exposed or seriously under exposed. Adjustment of the exposure is carried out to bring the image to a more desired state.
摘要:
A CMOS imager includes an array of active pixel sensors, wherein each pixel is associated with a respective column in the array. The imager also includes multiple circuits for reading out values of pixels from the active sensor array. Each readout circuit can be associated with a respective pair of columns in the array and can include first and second sample-and-hold circuits. The first and second sample-and-hold circuits are associated, respectively, with first and second columns of pixels in the array. Each readout circuit also includes an operational amplifier-based charge sensing circuit that selectively provides an amplified differential output signal based on signals sampled either by the first sample-and-hold circuit or the second sample-and-hold circuit. The readout circuit also has an analog-to-digital converter for converting the differential output to a corresponding digital signal using a successive approximation technique. Use of the readout circuit can increase the parallel structure of the overall chip, thereby reducing the bandwidth which each readout circuit must be capable of handling.
摘要:
A pixel includes a photodiode and a readout node for receiving charge transferred from the photodiode. The readout node is configured to have a variable capacitance that is non-linear with respect to a voltage at the readout node. The readout node is resettable. The readout node may be configured to have a lower capacitance when reset to a reset voltage than when getting filled with charge from the photodiode. The readout node may be configured such that the capacitance of the readout node continuously increases as additional charge is received by the readout node after the readout node is reset. The readout node may be configured such that the capacitance of the readout node jumps from a first capacitance to a second capacitance after the readout node has been filled with a certain amount of charge. An image sensor includes a pixel array with a plurality of the pixels.
摘要:
A pixel includes a photodiode and a readout node for receiving charge transferred from the photodiode. The readout node is configured to have a variable capacitance that is non-linear with respect to a voltage at the readout node. The readout node is resettable. The readout node may be configured to have a lower capacitance when reset to a reset voltage than when getting filled with charge from the photodiode. The readout node may be configured such that the capacitance of the readout node continuously increases as additional charge is received by the readout node after the readout node is reset. The readout node may be configured such that the capacitance of the readout node jumps from a first capacitance to a second capacitance after the readout node has been filled with a certain amount of charge. An image sensor includes a pixel array with a plurality of the pixels.
摘要:
A pixel includes a photodiode, a first transfer gate, a second transfer gate, and a floating diffusion. The pixel may include a storage gate, and the first transfer gate may be controllable to transfer charge from the photodiode to an area under the storage gate. The storage gate is controllable to store the charge in the area under the storage gate and to transfer the charge from the area under the storage gate. The first transfer gate may be controllable among a first biasing condition in which charge is transferable to an area under the first transfer gate, a second biasing condition in which the charge is storable in the area under the first transfer gate, and a third biasing condition in which the charge is transferable out of the area under the first transfer gate. The second transfer gate is controllable to transfer charge to the floating diffusion.
摘要:
An image sensor includes a pixel array, a plurality of memory blocks, a plurality of phase-locked loops, and a plurality of serializers. The pixel array includes a plurality of pixels. The plurality of memory blocks store digital pixel data converted from analog pixel signals output from the pixel array, and are located to a particular side of the pixel array. The plurality of phase-locked loops are located to the particular side of the pixel array. The plurality of serializers are located to the particular side of the pixel array. Each serializer of the plurality of serializers is connected to receive parallel data input from one or more corresponding memory blocks of the plurality of memory blocks and is configured to convert the parallel data input to serial data output using a corresponding plurality of clock signals from a corresponding phase-locked loop of the plurality of phase-locked loops.
摘要:
A pipelined readout method in an image sensor includes receiving one or more signals from a pixel of a row of a pixel array into a column storage at least partially during a time that a previously sampled amplified output of the column storage that is based on signals provided by a previous pixel of a previously read out row of the pixel array is converted from analog to digital by an analog-to-digital conversion circuit. The method further includes performing, by the analog-to-digital conversion circuit, analog-to-digital conversion of a sampled amplified output of the column storage that is based on the one or more signals from the pixel at least partially during a time that the column storage receives at least one signal from a another pixel of a subsequently read out row of the pixel array.
摘要:
An image sensor includes a plurality of pixels and a row driver. Each pixel includes a photodiode, a first transfer gate, a second transfer gate, a first storage node, and a second storage node. The row driver is configured to provide signals to the first transfer gate and the second transfer gate of each pixel such that charge is transferred from the photodiode to the first storage node through the first transfer gate while a signal representing charge stored at the second storage node is output from the pixel to a column readout line. The row driver is also configured to provide signals to the first transfer gate and the second transfer gate such that charge is transferred from the photodiode to the second storage node through the second transfer gate while a signal representing charge stored at the first storage node is output from the pixel.
摘要:
A high dynamic range imager operates pixels utilizing at least a short integration period and a long integration period. The pixel reading circuits of the imager are adapted to process pixel signals corresponding to the integration periods in parallel. The pixel signals are converted into digital values in parallel. The digital values are each linear functions of the incident light and therefore suitable for use with conventional color processing algorithms. A pipelined rolling shutter operation may be employed where the short integration period of one row of pixels is performed simultaneously with the long integration period of another row of pixels.
摘要:
A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to look for that pattern. The time when the pattern is received indicates the time of flight. A CMOS active pixel image sensor includes a plurality of pinned photodiode photodetectors that share buffer transistors. In one configuration, the charge from two or more pinned photodiodes may be binned together and applied to the gate of a shared buffer transistor.