公开(公告)号：US08173512B2

公开(公告)日：2012-05-08

申请号：US13080436

申请日：2011-04-05

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/76

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.

摘要翻译： 一种用于形成在衬底上包括松弛或假松弛层的结构的方法。 该方法包括在施主衬底上生长半导体材料的弹性应力层的步骤; 在应力层上形成粘性材料的玻璃状层; 去除供体衬底的一部分以形成包括玻璃层，应力层和供体衬底材料的表面层的结构; 图案化应力层; 并且在至少玻璃质层的粘度温度的温度下对结构进行热处理，以使应力层松弛以形成结构的松弛或假松弛层。

公开(公告)号：US20110217825A1

公开(公告)日：2011-09-08

申请号：US13080436

申请日：2011-04-05

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/762

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.

摘要翻译： 一种用于形成在衬底上包括松弛或假松弛层的结构的方法。 该方法包括在施主衬底上生长半导体材料的弹性应力层的步骤; 在应力层上形成粘性材料的玻璃状层; 去除供体衬底的一部分以形成包括玻璃层，应力层和供体衬底材料的表面层的结构; 图案化应力层; 并且在至少玻璃质层的粘度温度的温度下对结构进行热处理，以使应力层松弛以形成结构的松弛或假松弛层。

公开(公告)号：US07919393B2

公开(公告)日：2011-04-05

申请号：US12769299

申请日：2010-04-28

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.

摘要翻译： 一种用于形成在衬底上包括松弛或假松弛层的结构的方法。 该方法包括在施主衬底上生长半导体材料的弹性应力层的步骤; 在应力层上形成粘性材料的玻璃状层; 去除供体衬底的一部分以形成包括玻璃层，应力层和供体衬底材料的表面层的结构; 图案化应力层; 并且在至少玻璃质层的粘度温度的温度下对结构进行热处理，以使应力层松弛以形成结构的松弛或假松弛层。

公开(公告)号：US07736988B2

公开(公告)日：2010-06-15

申请号：US11345495

申请日：2006-02-02

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/76 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a material that becomes viscous above a certain viscosity temperature to form a first structure. The method further includes detaching the donor substrate from the first structure to form a second structure comprising the receiver substrate, the vitreous layer, and the strained layer, and then heat treating the second structure at a temperature and time sufficient to relax strains in the strained semiconductor layer and to form a relaxed or pseudo-relaxed useful layer on the receiver substrate.

摘要翻译： 描述了在衬底上形成松弛或假松弛有用层的方法。 该方法包括在施主衬底上生长应变半导体层，通过在某一粘度温度下变得粘稠的材料的玻璃质层将接收器衬底接合到应变半导体层以形成第一结构。 该方法还包括从第一结构分离施主衬底以形成包括接受衬底，玻璃体层和应变层的第二结构，然后在足够的温度和时间对第二结构进行热处理以使应变中的应变松弛 并且在接收器基板上形成松弛或假松弛的有用层。

公开(公告)号：US07018909B2

公开(公告)日：2006-03-28

申请号：US10784016

申请日：2004-02-20

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： The invention relates to methods of forming a relaxed or pseudo-relaxed layer on a substrate, wherein the relaxed layer may be a semiconductor material. An implementation of the method includes growing an elastically stressed semiconductor material layer on a donor substrate, forming a glassy layer of a viscous material and bonding it to the stressed layer, removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate, and then heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer. The glassy layer can also be bonded to a receiving substrate so that the structure can be transferred thereto. Implementations also relate to structures obtained from the method.

摘要翻译： 本发明涉及在衬底上形成松弛或假松弛层的方法，其中松弛层可以是半导体材料。 该方法的实现包括在施主衬底上生长弹性应力的半导体材料层，形成粘性材料的玻璃层并将其粘合到应力层，去除供体衬底的一部分以形成包括玻璃层的结构 ，应力层和供体衬底的表面层，然后在至少玻璃质层的粘度温度的温度下对结构进行热处理以使应力层松弛。 玻璃状层也可以结合到接收基板，从而可以将结构转移到其上。 实现也涉及从该方法获得的结构。

公开(公告)号：US20100210090A1

公开(公告)日：2010-08-19

申请号：US12769299

申请日：2010-04-28

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/20

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a structure that includes a relaxed or pseudo-relaxed layer on a substrate. The method includes the steps of growing an elastically stressed layer of semiconductor material on a donor substrate; forming a glassy layer of a viscous material on the stressed layer; removing a portion of the donor substrate to form a structure that includes the glassy layer, the stressed layer and a surface layer of donor substrate material; patterning the stressed layer; and heat treating the structure at a temperature of at least a viscosity temperature of the glassy layer to relax the stressed layer and form the relaxed or pseudo-relaxed layer of the structure.

摘要翻译： 一种用于形成在衬底上包括松弛或假松弛层的结构的方法。 该方法包括在施主衬底上生长半导体材料的弹性应力层的步骤; 在应力层上形成粘性材料的玻璃状层; 去除供体衬底的一部分以形成包括玻璃层，应力层和供体衬底材料的表面层的结构; 图案化应力层; 并且在至少玻璃质层的粘度温度的温度下对该结构进行热处理，以使应力层松弛以形成结构的松弛或假松弛层。

公开(公告)号：US20060128117A1

公开(公告)日：2006-06-15

申请号：US11345495

申请日：2006-02-02

申请人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

发明人： Bruno Ghyselen ,  Carlos Mazure ,  Emmanuel Arene

IPC分类号： H01L21/30

CPC分类号： H01L21/76259 ,  H01L21/324 ,  H01L21/76254 ,  H01L2221/68363

摘要： A method for forming a relaxed or pseudo-relaxed useful layer on a substrate is described. The method includes growing a strained semiconductor layer on a donor substrate, bonding a receiver substrate to the strained semiconductor layer by a vitreous layer of a material that becomes viscous above a certain viscosity temperature to form a first structure. The method further includes detaching the donor substrate from the first structure to form a second structure comprising the receiver substrate, the vitreous layer, and the strained layer, and then heat treating the second structure at a temperature and time sufficient to relax strains in the strained semiconductor layer and to form a relaxed or pseudo-relaxed useful layer on the receiver substrate.

摘要翻译： 描述了在衬底上形成松弛或假松弛有用层的方法。 该方法包括在施主衬底上生长应变半导体层，通过在某一粘度温度下变得粘稠的材料的玻璃质层将接收器衬底接合到应变半导体层以形成第一结构。 该方法还包括从第一结构分离施主衬底以形成包括接受衬底，玻璃体层和应变层的第二结构，然后在足够的温度和时间对第二结构进行热处理，以缓解应变中的应变 并且在接收器基板上形成松弛或假松弛的有用层。

公开(公告)号：US20060286770A1

公开(公告)日：2006-12-21

申请号：US11509047

申请日：2006-08-24

申请人： Bruno Ghyselen ,  Cecile Aulnette ,  Benoit Bataillou ,  Carlos Mazure ,  Hubert Moriceau

发明人： Bruno Ghyselen ,  Cecile Aulnette ,  Benoit Bataillou ,  Carlos Mazure ,  Hubert Moriceau

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.

摘要翻译： 一种用于制造半导体结构的方法，所述半导体结构在衬底上包括至少一个有用层。 该方法包括提供源极基底中的弱化区域，其在弱化区域和源极基底的前面之间限定相对较厚的有用层; 将源极基板的正面粘合到支撑基板上，并在弱化区域将有用层与源极基板分离，以将有用层转移到支撑基板; 将原子物质植入有用层的自由面中，以在其中形成受控的平均注入深度，以在限定前后有用层的有用层内形成弱化区，其中后部有用层与源极基底和前部有用层接触 含有较大浓度的缺陷; 在加入原子物质之后将加强基底粘合到前有用层的自由面上; 并且沿着弱化区从后部有用层分离前部有用层，以形成包括支撑基板和其上的后部有用层的半导体结构。 所获得的结构可用于电子学，光电子学或光学领域。

公开(公告)号：US07407867B2

公开(公告)日：2008-08-05

申请号：US11509047

申请日：2006-08-24

申请人： Bruno Ghyselen ,  Cécile Aulnette ,  Benoĩt Bataillou ,  Carlos Mazure ,  Hubert Moriceau

发明人： Bruno Ghyselen ,  Cécile Aulnette ,  Benoĩt Bataillou ,  Carlos Mazure ,  Hubert Moriceau

IPC分类号： H01L21/20

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.

摘要翻译： 一种用于制造半导体结构的方法，所述半导体结构在衬底上包括至少一个有用层。 该方法包括提供源极基底中的弱化区域，其在弱化区域和源极基底的前面之间限定相对较厚的有用层; 将源极基板的正面粘合到支撑基板上，并在弱化区域将有用层与源极基板分离，以将有用层转移到支撑基板; 将原子物质植入有用层的自由面中，以在其中形成受控的平均注入深度，以在限定前后有用层的有用层内形成弱化区，其中后部有用层与源极基底和前部有用层接触 含有较大浓度的缺陷; 在加入原子物质之后将加强基底粘合到前有用层的自由面上; 并且沿着弱化区从后部有用层分离前部有用层，以形成包括支撑基板和其上的后部有用层的半导体结构。 所获得的结构可用于电子学，光电子学或光学领域。

公开(公告)号：US06964914B2

公开(公告)日：2005-11-15

申请号：US10349295

申请日：2003-01-22

申请人： Bruno Ghyselen ,  Fabrice Letertre ,  Carlos Mazure

发明人： Bruno Ghyselen ,  Fabrice Letertre ,  Carlos Mazure

IPC分类号： C30B29/38 ,  C23C16/01 ,  C23C16/34 ,  C30B25/02 ,  C30B29/04 ,  H01L21/20 ,  H01L21/762 ,  H01L21/30 ,  H01L21/46 ,  H01L21/76

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaxy on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature. The coefficients of thermal expansion of the second and third materials are selected to be different from each other by a thermal expansion differential, determined as a function of the epitaxial growth temperature or subsequent application of external mechanical stresses, such that, as the second assembly cools from the epitaxial growth temperature, stresses are induced in the removable bonding interface to facilitate detachment of the nucleation layer from the substrate.

摘要翻译： 一种制造由半导体材料制成的自立式基板的方法。 提供了第一组件，并且其包括第一材料的相对更薄的成核层，第二材料的支撑体和限定在成核层和支撑体的相对表面之间的可去除的结合界面。 通过在成核层上外延生长相对较厚的第三材料层的衬底，以形成第二组件，其中衬底获得足够的厚度以使其独立。 第三种材料优选是单晶材料。 而且，至少将衬底加热到​​外延生长温度来保存接合界面的可去除特性。 第二和第三材料的热膨胀系数被选择为相互不同的热膨胀差异，其被确定为外延生长温度的函数或随后的外部机械应力的应用，使得当第二组件冷却时 从外延生长温度，在可除去的结合界面中诱发应力以促进成核层与基底的分离。