公开(公告)号：US08277560B2

公开(公告)日：2012-10-02

申请号：US10492539

申请日：2003-03-19

申请人： Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Etsuo Wani ,  Kenji Kameda ,  Yuki Mitsui ,  Yutaka Ohira ,  Taisuke Yonemura ,  Akira Sekiya

发明人： Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Etsuo Wani ,  Kenji Kameda ,  Yuki Mitsui ,  Yutaka Ohira ,  Taisuke Yonemura ,  Akira Sekiya

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45593 ,  C23C16/4405 ,  C23C16/4412 ,  H01L21/02046 ,  Y02C20/30 ,  Y02P70/605

摘要： A CVD apparatus cleaning method that efficiently removes by-product such as SiO2 or Si3N4 adhered to and deposited on surfaces of an inner wall, an electrode, and the like in a reaction chamber at a film forming step. In the cleaning method the discharged cleaning gas amount is very small, environmental influences such as global warming can be lessened, and cost can be reduced. A CVD apparatus supplying reactive gas into a reaction chamber and forming a deposited film on a surface of a base material provided in the reaction chamber includes an exhaust gas recycling path recycling an exhaust gas reaching the reaction chamber from downstream of a pump on an exhaust path for exhausting a gas from an inner part of the reaction chamber through the pump.

摘要翻译： 一种CVD装置清洗方法，其在成膜步骤中有效地除去在反应室内附着和沉积在内壁，电极等的表面上的副产物如SiO 2或Si 3 N 4。 在清洁方法中，排出的清洁气体量非常小，可以减少诸如全球变暖的环境影响，并且可以降低成本。 将反应气体供应到反应室中并在设置在反应室中的基材的表面上形成沉积膜的CVD装置包括排气回收路径，从排气路径上的泵下游到达反应室的废气再循环 用于从反应室的内部通过泵排出气体。

公开(公告)号：US20060207630A1

公开(公告)日：2006-09-21

申请号：US10548874

申请日：2004-03-12

申请人： Katsuo Sakai ,  Kaoru Abe ,  Seiji Okura ,  Masaji Sakamura ,  Hitoshi Murata ,  Kenji Kameda ,  Etsuo Wani ,  Akira Sekiya

发明人： Katsuo Sakai ,  Kaoru Abe ,  Seiji Okura ,  Masaji Sakamura ,  Hitoshi Murata ,  Kenji Kameda ,  Etsuo Wani ,  Akira Sekiya

IPC分类号： B08B6/00 ,  B08B9/00 ,  C23F1/00 ,  B05C11/00 ,  C23C16/00

CPC分类号： C23C16/52 ,  C23C16/4405

摘要： An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.

摘要翻译： 一种用于清洁可以有效地除去诸如SiO 2或Si 3 N 4 N 3的副产物的CVD装置的装置，其被粘附并沉积到 在成膜工艺中的反应室中的内壁，电极等的表面，以及CVD装置的清洗方法。 控制器通过光发射光谱监测反应室中F自由基的发光强度数据，并将该数据与校准的预存的发光强度数据进行比较，并且在经过预定时间从达到发光强度饱和点之后结束清洁。 此外，通过傅里叶变换红外光谱法监测从反应室排出的气体中SiF 4的浓度数据，并与SiF 4的预先存储的浓度数据进行比较，以确定 当达到预定的清洁终点浓度时已经过了预定的时间，从而结束清洁。

公开(公告)号：US20060201533A1

公开(公告)日：2006-09-14

申请号：US10548873

申请日：2004-03-12

申请人： Etsuo Wani ,  Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Kenji Kameda

发明人： Etsuo Wani ,  Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Kenji Kameda

IPC分类号： B08B6/00 ,  B08B9/00 ,  C23C16/00 ,  B05C11/00

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  H01J37/32082

摘要： There is provided a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is stuck and deposited onto the surface of an internal wall, an electrode or the like in a CVD chamber in a film forming process, and furthermore, executing cleaning having a small damage over an upper electrode and a counter electrode stage (a lower electrode) and manufacturing a thin film of high quality, and a CVD apparatus cleaning method using the same. In a CVD apparatus cleaning method of introducing a cleaning gas to carry out plasma cleaning over an inside of a CVD chamber after forming a deposited film on a surface of a substrate, a frequency of an RF to be applied to an RF electrode is switched into a first frequency to be applied for forming a film and a second frequency to be applied when executing the plasma cleaning.

摘要翻译： 提供了一种CVD装置，其能够有效地除去被粘附并沉积到其上的副产物如SiO 2或Si 3 N 4 N 4 在成膜工艺中在CVD室中的内壁，电极等的表面，此外，执行在上电极和对电极台（下电极）上具有小损伤的清洁并制造薄膜 的高质量的CVD装置清洗方法。 在CVD基板的表面形成沉积膜之后，在CVD装置的清洗方法中，在CVD室内引入清洗气体进行等离子体清洗，将施加到RF电极的RF的频率切换成 用于形成膜的第一频率和在执行等离子体清洗时要施加的第二频率。

公开(公告)号：US20050252451A1

公开(公告)日：2005-11-17

申请号：US10490217

申请日：2003-03-13

申请人： Tatsuro Beppu ,  Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Etsuo Wani ,  Kenji Kameda ,  Yuki Mitsui ,  Yutaka Ohira ,  Taisuke Yonemura ,  Akira Sekiya

发明人： Tatsuro Beppu ,  Katsuo Sakai ,  Seiji Okura ,  Masaji Sakamura ,  Kaoru Abe ,  Hitoshi Murata ,  Etsuo Wani ,  Kenji Kameda ,  Yuki Mitsui ,  Yutaka Ohira ,  Taisuke Yonemura ,  Akira Sekiya

IPC分类号： B08B7/00 ,  C23C16/44 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  H01J37/32357 ,  H01J37/32862 ,  Y02C20/30 ,  Y02P70/605

摘要： It is an object to provide a cleaning method in a CVD apparatus capable of efficiently removing a by-product such as SiO2 or Si3N4 which is adhered to and deposited on the surfaces of an inner wall, an electrode and the like in a reaction chamber at a film forming step. Furthermore, it is an object to provide a cleaning method in which the amount of a cleaning gas to be discharged is very small, an influence on an environment such as global warming is also lessened and a cost can also be reduced. An energy is applied to a fluorine compound to react the fluorine compound, thereby generating a fluorine gas component and a component other than the fluorine gas component. Furthermore, the fluorine gas component and the component other than the fluorine gas component which are generated are separated from each other so that the fluorine gas component is separated and refined. After a film forming process for a base material is carried out by a CVD apparatus, a separated and refined fluorine gas is then converted to a plasma to remove a by-product adhered into the reaction chamber.

摘要翻译： 本发明的目的是提供一种能够有效地除去SiO 2或Si 3 N 4 N 2的副产物的CVD装置中的清洗方法。 >，其在膜形成步骤中在反应室中粘附并沉积在内壁，电极等的表面上。 此外，其目的在于提供一种清理方法，其中排出的清洁气体的量非常小，对全球变暖等环境的影响也减少，成本也降低。 向氟化合物施加能量以使氟化合物反应，从而产生氟气成分和氟气成分以外的成分。 此外，氟气成分和除了产生的氟气成分以外的成分彼此分离，使氟气成分分离精制。 在通过CVD装置进行基材的成膜处理之后，将分离精制的氟气转化为等离子体，除去附着在反应室中的副产物。

公开(公告)号：US08043438B2

公开(公告)日：2011-10-25

申请号：US10548874

申请日：2004-03-12

申请人： Katsuo Sakai ,  Kaoru Abe ,  Seiji Okura ,  Masaji Sakamura ,  Hitoshi Murata ,  Kenji Kameda ,  Etsuo Wani ,  Akira Sekiya

发明人： Katsuo Sakai ,  Kaoru Abe ,  Seiji Okura ,  Masaji Sakamura ,  Hitoshi Murata ,  Kenji Kameda ,  Etsuo Wani ,  Akira Sekiya

IPC分类号： B08B9/00

CPC分类号： C23C16/52 ,  C23C16/4405

摘要： An apparatus for cleaning a CVD apparatus that can efficiently remove a by-product such as SiO2 or Si3N4 stuck and deposited onto the surface of an internal wall, an electrode, or the like in a reaction chamber in a film forming process, and a method for cleaning a CVD apparatus. A control monitors luminous intensity data of an F radical in a reaction chamber by optical emission spectroscopy and compares the data with calibrated prestored luminous intensity data, and ends cleaning after a predetermined time passes from reaching a luminous intensity saturation point. Furthermore, concentration data of SiF4 in a gas discharged from the reaction chamber are monitored by a Fourier transform infrared spectrometry and compared with prestored concentration data of SiF4 to decide that the predetermined time has passed when a predetermined cleaning end point concentration is reached, thereby ending the cleaning.

摘要翻译： 一种用于清洁CVD装置的装置，其可以有效地除去在成膜过程中在反应室中粘附并沉积到反应室内的表面上的诸如SiO 2或Si 3 N 4的副产物，以及方法 用于清洁CVD装置。 控制器通过光发射光谱监测反应室中F自由基的发光强度数据，并将该数据与校准的预存的发光强度数据进行比较，并且在经过预定时间从达到发光强度饱和点之后结束清洁。 此外，通过傅里叶变换红外光谱法监测从反应室排出的气体中SiF 4的浓度数据，并与SiF 4的预先存储的浓度数据进行比较，以确定在达到预定清洗终点浓度时经过了预定时间，从而结束 清洁。

公开(公告)号：US08703772B2

公开(公告)日：2014-04-22

申请号：US13217636

申请日：2011-08-25

申请人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

发明人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

IPC分类号： A61K31/497 ,  C07D401/12

CPC分类号： C07D215/227

摘要： The present invention provides low hygroscopic forms of aripiprazole and processes for the preparation thereof which will not convert to a hydrate or lose their original solubility even when a medicinal preparation containing the aripiprazole anhydride crystals is stored for an extended period.

摘要翻译： 本发明提供低吸湿形式的阿立哌唑及其制备方法，即使当含有阿立哌唑酐晶体的药物制剂长时间储存​​时，其也不会转化为水合物或丧失其原始溶解度。

公开(公告)号：US20120280614A1

公开(公告)日：2012-11-08

申请号：US13551713

申请日：2012-07-18

申请人： Toshiaki Imai ,  Kaoru Abe ,  Shinji Kubota ,  Shinichiro Morikawa ,  Teiichiro Nishimura

发明人： Toshiaki Imai ,  Kaoru Abe ,  Shinji Kubota ,  Shinichiro Morikawa ,  Teiichiro Nishimura

IPC分类号： H05B33/12

CPC分类号： H01L51/5256

摘要： A display device including an organic electroluminescence device provided on a substrate and protected by a protective film characterized in that the protective film is composed of silicon nitride films formed in layers by a chemical vapor deposition method using an ammonia gas, a high-density silicon nitride film being provided in a surface layer of the protective film, and a low-density silicon nitride film having a lower density than that of the high-density silicon nitride film being provided below it.

摘要翻译： 一种显示装置，包括设置在基板上并被保护膜保护的有机电致发光元件，其特征在于，所述保护膜由通过使用氨气的化学气相沉积法形成的氮化硅膜构成，高密度氮化硅 膜设置在保护膜的表面层中，并且在其下方设置密度低于高密度氮化硅膜的密度的低密度氮化硅膜。

公开(公告)号：US20120268073A1

公开(公告)日：2012-10-25

申请号：US13440588

申请日：2012-04-05

申请人： Tokuhiro Morioka ,  Hitoshi Watanabe ,  Kaoru Abe ,  Akihisa Sakamoto ,  Takakazu Hirose ,  Kenichi Kawase

发明人： Tokuhiro Morioka ,  Hitoshi Watanabe ,  Kaoru Abe ,  Akihisa Sakamoto ,  Takakazu Hirose ,  Kenichi Kawase

IPC分类号： H02J7/00 ,  B21D33/00 ,  H01M10/05 ,  H01M4/64 ,  H01M2/02

CPC分类号： H01M4/70 ,  B21D13/04 ,  B21D13/10 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M4/5825 ,  H01M4/587 ,  H01M10/0587 ,  Y10T29/301

摘要： A nonaqueous electrolyte battery provided with a rolled electrode assembly, in which a positive electrode including a positive electrode active material layer disposed on a positive electrode collector formed from metal foil and a negative electrode including a negative electrode active material layer disposed on a negative electrode collector formed from metal foil are stacked with a separator therebetween and are rolled, and an electrolyte, wherein at least one of the positive electrode collector and the negative electrode collector has a compressed pattern portion which is disposed as a part of the metal foil and which has a thickness smaller than that of the other portion through compression, and the compressed pattern portion from one end parallel to the rolling direction of the metal foil to the other end opposite to the one end is not disposed continuously in the direction orthogonal to the rolling direction of the metal foil.

摘要翻译： 一种非水电解质电池，其设置有卷绕电极组件，其中包括设置在由金属箔形成的正极集电体上的正极活性物质层的正极和设置在负极集电体上的负极活性物质层的负极 由金属箔形成的层叠体，分离器之间进行卷绕，电解液，其中正极集电体和负极集电体中的至少一个具有作为金属箔的一部分配置的压缩图案部， 通过压缩的厚度小于另一部分的厚度，并且压缩图案部分从与金属箔的滚动方向平行的一端到与一端相反的另一端的压缩图案部分不沿与轧制方向正交的方向 的金属箔。

公开(公告)号：US07910589B2

公开(公告)日：2011-03-22

申请号：US11790606

申请日：2007-04-26

申请人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

发明人： Takuji Bando ,  Satoshi Aoki ,  Junichi Kawasaki ,  Makoto Ishigami ,  Youichi Taniguchi ,  Tsuyoshi Yabuuchi ,  Kiyoshi Fujimoto ,  Yoshihiro Nishioka ,  Noriyuki Kobayashi ,  Tsutomu Fujimura ,  Masanori Takahashi ,  Kaoru Abe ,  Tomonori Nakagawa ,  Koichi Shinhama ,  Naoto Utsumi ,  Michiaki Tominaga ,  Yoshihiro Ooi ,  Shohei Yamada ,  Kenji Tomikawa

IPC分类号： A61K31/497 ,  C07D401/12

CPC分类号： C07D215/227 ,  C07B2200/13 ,  C07D215/22 ,  Y10T428/2982

摘要： The present invention provides low hygroscopic forms of aripiprazole and processes for the preparation thereof which will not convert to a hydrate or lose their original solubility even when a medicinal preparation containing the anhydrous aripiprazole crystals is stored for an extended period.

摘要翻译： 本发明提供低吸湿形式的阿立哌唑及其制备方法，即使当含有无水阿立哌唑晶体的药物制剂长时间储存​​时，其也不会转化为水合物或失去其原始溶解度。

公开(公告)号：US20090309486A1

公开(公告)日：2009-12-17

申请号：US12096487

申请日：2006-12-07

申请人： Toshiaki Imai ,  Kaoru Abe ,  Shinji Kubota ,  Shinichiro Morikawa ,  Teiichiro Nishimura

发明人： Toshiaki Imai ,  Kaoru Abe ,  Shinji Kubota ,  Shinichiro Morikawa ,  Teiichiro Nishimura

IPC分类号： H01L51/50

CPC分类号： H01L51/5256

摘要： There is provided a display capable of protecting a light-emitting device by a protective film having good sealing characteristics and sidewall step coverage and preventing deterioration of the light-emitting device, thereby maintaining good display characteristics. A display device 1 including an organic electroluminescence device 3 provided on a substrate 2 and protected by a protective film 4 is characterized in that the protective film 4 is composed of silicon nitride films 4a, 4b, and 4c formed in layers by a chemical vapor deposition method using an ammonia gas, the high-density silicon nitride film 4c is provided in a surface layer of the protective film 4, and the low-density silicon nitride film 4b having a lower density than that of the high-density silicon nitride film 4c is provided below it.

摘要翻译： 提供一种能够通过具有良好的密封特性和侧壁台阶覆盖的保护膜来保护发光装置并防止发光装置的劣化的显示器，从而保持良好的显示特性。 包括设置在基板2上并被保护膜4保护的有机电致发光器件3的显示装置1的特征在于，保护膜4由通过化学气相沉积形成的氮化硅膜4a，4b和4c构成 使用氨气的方法，在保护膜4的表面层上设置高密度氮化硅膜4c，密度低于高密度氮化硅膜4c的低密度氮化硅膜4b 在它下方提供。