公开(公告)号：US08951348B1

公开(公告)日：2015-02-10

申请号：US13370579

申请日：2012-02-10

Applicant: Krishnan Shrinivasan ,  Feng Wang ,  George Kamian ,  Steve Gentile ,  Mark Yam

Inventor： Krishnan Shrinivasan ,  Feng Wang ,  George Kamian ,  Steve Gentile ,  Mark Yam

IPC: C23C16/50 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: C23C16/56 ,  H01L21/67109 ,  H01L21/67115

Abstract: The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.

Abstract translation: 本发明涉及半导体晶片的固化。 更具体地，本发明涉及包含多个固化站的固化室，每个固化站具有一个或多个UV光源。 通过在每个站中顺序地暴露于光源来固化晶片。 在一些实施例中，晶片在曝光期间相对于光源保持静止。 在其它实施例中，在曝光期间在光源和晶片之间存在相对运动。 本发明还提供了可以通过提供对晶片温度和UV强度的独立控制来独立地调节固化材料的交联，密度和增加应力的室。

公开(公告)号：US07327948B1

公开(公告)日：2008-02-05

申请号：US11184101

申请日：2005-07-18

Applicant: Krishnan Shrinivasan ,  Stephen Gentile ,  Peter Woytowitz ,  Sassan Roham ,  George Kamian

Inventor： Krishnan Shrinivasan ,  Stephen Gentile ,  Peter Woytowitz ,  Sassan Roham ,  George Kamian

IPC: A21B2/00 ,  C23C16/00

CPC classification number: C23C16/56 ,  H01L21/67109 ,  H01L21/67115

Abstract: The present invention provides a heat transfer assembly that, when coupled to an object, is capable of keeping the object at a uniform elevated temperature while removing large amounts of heat from an external source. The assembly may be contained in a pedestal for use in a UV-cure chamber. The heat transfer assembly includes a heating element to control the wafer temperature and a cooling element to remove incident IR heat from the wafer and pedestal. A heat resistant layer having a calibrated heat resistance is located between the heating and cooling elements and between the wafer and the cooling elements. The heat resistant layer is able to sustain high temperature gradient from the wafer to the coolant so that the coolant does not boil while permitting enough heat to be conducted away from the wafer to maintain the desired set-point temperature.

Abstract translation: 本发明提供了一种传热组件，当与物体相连时，能够将物体保持在均匀的高温，同时从外部源除去大量的热量。 组件可以容纳在用于UV固化室中的基座中。 传热组件包括用于控制晶片温度的加热元件和用于从晶片和基座移除入射的IR热的冷却元件。 具有校准的耐热性的耐热层位于加热和冷却元件之间以及晶片和冷却元件之间。 耐热层能够承受从晶片到冷却剂的高温梯度，使得冷却剂不沸腾，同时允许足够的热量从晶片导出以保持所需的设定点温度。

公开(公告)号：US06848458B1

公开(公告)日：2005-02-01

申请号：US10067520

申请日：2002-02-05

Applicant: Krishnan Shrinivasan ,  Souvik Banerjee ,  Francisco Juarez ,  Karen A. Reinhardt ,  Sanjay Gopinath

Inventor： Krishnan Shrinivasan ,  Souvik Banerjee ,  Francisco Juarez ,  Karen A. Reinhardt ,  Sanjay Gopinath

IPC: B08B7/00 ,  H01L21/00 ,  B08B3/00

CPC classification number: H01L21/67057 ,  B08B7/0021 ,  Y10S134/902

Abstract: The present invention pertains to a system for cleaning wafers that includes specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems, as well as methods for implementing wafer cleaning using such a system. A solvent delivery mechanism converts a liquid-state sub-critical solution to a supercritical cleaning solution and introduces it into a process vessel that contains a wafer or wafers. The supercritical cleaning solution is recirculated through the process vessel by a recirculation system. An additive delivery system introduces chemical additives to the supercritical cleaning solution via the solvent delivery mechanism, the process vessel, or the recirculation system. Addition of chemical additives to the sub-critical solution may also be performed. The recirculation system provides efficient mixing of chemical additives, efficient cleaning, and process uniformity. A depressurization system provides dilution and removal of cleaning solutions under supercritical conditions. A recapture-recycle system introduces captured-purified solvents into the solvent delivery mechanism.

Abstract translation: 本发明涉及用于清洁晶片的系统，其包括专门的加压，处理容器，再循环，化学添加，减压和再捕集循环子系统，以及使用这种系统实现晶片清洗的方法。 溶剂递送机构将液态亚临界溶液转化为超临界清洗溶液并将其引入含有晶片或晶片的处理容器中。 超临界清洗溶液通过再循环系统再循环通过处理容器。 添加剂输送系统通过溶剂输送机构，处理容器或再循环系统将化学添加剂引入超临界清洗溶液。 也可以向亚临界溶液中添加化学添加剂。 再循环系统提供化学添加剂的有效混合，高效的清洗和工艺的均匀性。 减压系统在超临界条件下提供清洗溶液的稀释和去除。 回收再循环系统将捕获的纯化溶剂引入溶剂输送机构。

公开(公告)号：US08980769B1

公开(公告)日：2015-03-17

申请号：US11977792

申请日：2007-10-25

Applicant: Jason Haverkamp ,  Dennis Hausmann ,  Kevin McLaughlin ,  Krishnan Shrinivasan ,  Michael Rivkin ,  Eugene Smargiassi ,  Mohamed Sabri

Inventor： Jason Haverkamp ,  Dennis Hausmann ,  Kevin McLaughlin ,  Krishnan Shrinivasan ,  Michael Rivkin ,  Eugene Smargiassi ,  Mohamed Sabri

IPC: H01L21/00 ,  H01L21/331

CPC classification number: C23C16/56 ,  C23C16/345 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771

Abstract: The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.

Abstract translation: 本发明提供了在衬底上制备低k介电材料的改进方法。 该方法涉及多种操作紫外线固化方法，其中UV强度，晶片衬底温度，UV光谱分布和其它条件可以在每个操作中独立调制。 可以将脉冲或甚至同时施​​加到同一晶片上。 在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。 在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。

公开(公告)号：US08889233B1

公开(公告)日：2014-11-18

申请号：US11369311

申请日：2006-03-06

Applicant: Maxim Kelman ,  Krishnan Shrinivasan ,  Feng Wang ,  Victor Lu ,  Sean Chang ,  Guangquan Lu

Inventor： Maxim Kelman ,  Krishnan Shrinivasan ,  Feng Wang ,  Victor Lu ,  Sean Chang ,  Guangquan Lu

IPC: C08F2/48

CPC classification number: C23C16/56 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771

Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multi-step ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated at each step. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first step to facilitate removal of the porogen and create a porous dielectric film. In a second step, the film is exposed to UV radiation to increase crosslinking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Abstract translation: 本发明提供了在衬底上制备低k电介质材料的改进方法。 该方法涉及多步紫外线固化方法，其中UV强度，晶片衬底温度和其它条件可以在每个步骤中独立调制。 在某些实施方案中，包含结构形成剂和致孔剂的膜在第一步骤中暴露于UV辐射以便于除去致孔剂并产生多孔介电膜。 在第二步中，将膜暴露于UV辐射以增加多孔膜内的交联。 在某些实施例中，固化发生在多工位UV室中，其中UV强度和衬底温度可以在每个工位单独控制。

公开(公告)号：US07941039B1

公开(公告)日：2011-05-10

申请号：US11851310

申请日：2007-09-06

Applicant: Krishnan Shrinivasan ,  Stephen V. Gentile ,  Peter Woytowitz ,  Sassan Roham ,  George Kamian ,  Michael Rivkin

Inventor： Krishnan Shrinivasan ,  Stephen V. Gentile ,  Peter Woytowitz ,  Sassan Roham ,  George Kamian ,  Michael Rivkin

IPC: A21B2/00 ,  C23C16/00

CPC classification number: C23C16/56 ,  H01L21/67103 ,  H01L21/67115

Abstract: Provided herein are assemblies that, when coupled to an object, are capable of keeping the object at a uniform elevated temperature while removing large amounts of heat from an external source. Applications include various integrated circuit fabrication processes that use such external sources to expose wafers to radiation. In certain embodiments, the assemblies include a pedestal for supporting the wafer or other object. In certain embodiments, the assemblies include a calibrated heat resistance that allows heat be conducted away from the pedestal and wafer to maintain the desired set-point temperature. In certain embodiments, the pedestal may have one or more protrusions used to dissipate or transfer heat from the pedestal to a heat sink. Also, in certain embodiments, the pedestal surface is configured to have a spectral reflectivity of desired values in such way as to reflect the wavelengths that are emitted by an external radiant heat source.

Abstract translation: 本文提供的是当与物体耦合时能够将物体保持在均匀升高的温度同时从外部源除去大量热量的组件。 应用包括使用这种外部源将晶片暴露于辐射的各种集成电路制造工艺。 在某些实施例中，组件包括用于支撑晶片或其它物体的基座。 在某些实施例中，组件包括校准的耐热性，其允许热量从基座和晶片导出以保持所需的设定点温度。 在某些实施例中，基座可以具有用于将热量从基座散热或传递到散热器的一个或多个突起。 而且，在某些实施例中，基座表面被配置为具有期望值的光谱反射率，以便反射由外部辐射热源发射的波长。

公开(公告)号：US20080264443A1

公开(公告)日：2008-10-30

申请号：US10752168

申请日：2004-01-05

Applicant: Krishnan Shrinivasan ,  Wilbert G.M. van den Hoek ,  Patrick Joyce ,  Thomas Pratt ,  Tim Thomas

Inventor： Krishnan Shrinivasan ,  Wilbert G.M. van den Hoek ,  Patrick Joyce ,  Thomas Pratt ,  Tim Thomas

IPC: C23G1/00 ,  B08B3/00

CPC classification number: B08B7/0021 ,  H01L21/67057

Abstract: The present invention pertains to a system for processing semiconductor wafers. The processing may involve the removal of material from the wafers or deposition of material on the wafers. Various aspects of the invention include specialized pressurization, process vessel, recirculation, chemical addition, depressurization, and recapture-recycle subsystems. A solvent delivery mechanism can convert a liquid-state sub-critical solution to a supercritical processing solution and introduce it into a process vessel that contains a batch of wafers. The wafers may be rotated within the supercritical processing solution. The supercritical processing solution is preferably recirculated through the process vessel by a recirculation system. When chemical additives are added to a supercritical solvent, the momentum of the chemical additives are preferably matched to the momentum of the supercritical solvent. Additives may be added at a higher initial flow rate, then ramped down a lower flow rate, e.g., a steady-state flow rate.

Abstract translation: 本发明涉及一种用于处理半导体晶片的系统。 该处理可能涉及从晶片去除材料或将材料沉积在晶片上。 本发明的各个方面包括专门的加压，加工容器，再循环，化学添加，减压和再捕获循环子系统。 溶剂递送机构可以将液态亚临界溶液转化为超临界处理溶液并将其引入含有一批晶片的处理容器中。 晶片可以在超临界处理溶液内旋转。 超临界处理溶液优选通过再循环系统再循环通过处理容器。 当将化学添加剂加入到超临界溶剂中时，化学添加剂的动量优选与超临界溶剂的动量匹配。 添加剂可以以更高的初始流速加入，然后降低较低的流速，例如稳态流速。

公开(公告)号：US06905556B1

公开(公告)日：2005-06-14

申请号：US10306677

申请日：2002-11-27

Applicant: Raashina Humayun ,  Patrick C. Joyce ,  Adrianne Kay Tipton ,  Krishnan Shrinivasan ,  Dennis W. Hess ,  Satyanarayana Myneni ,  Souvik Banerjee

Inventor： Raashina Humayun ,  Patrick C. Joyce ,  Adrianne Kay Tipton ,  Krishnan Shrinivasan ,  Dennis W. Hess ,  Satyanarayana Myneni ,  Souvik Banerjee

IPC: B08B7/00 ,  C11D7/02 ,  C11D7/12 ,  C11D11/00 ,  H01L21/306 ,  H01L21/311 ,  B08B3/00

CPC classification number: H01L21/02101 ,  B08B7/0021 ,  C11D7/02 ,  C11D7/12 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31116 ,  H01L21/31133

Abstract: A method of delivering a reagent to a wafer is provided. A solvent is provided. A set of conditions of temperature and pressure is provided to the solvent, which is sufficient to bring the solvent to supercritical conditions. A reagent is provided. A surfactant is provided, where the surfactant has a first moiety with an affinity for the solvent and a second moiety with an affinity for the reagent, where the surfactant increases the concentration of the reagent that may be carried by the solvent. The solvent, surfactant, and reagent are combined to form a solution. The solution is delivered to a supercritical process chamber, wherein a wafer is exposed to the solution in the process chamber.

Abstract translation: 提供了将试剂递送到晶片的方法。 提供溶剂。 向溶剂提供一组温度和压力的条件，这足以使溶剂达到超临界条件。 提供试剂。 提供了表面活性剂，其中表面活性剂具有对溶剂具有亲和性的第一部分和对试剂具有亲和力的第二部分，其中表面活性剂增加可由溶剂承载的试剂的浓度。 溶剂，表面活性剂和试剂组合形成溶液。 将溶液输送到超临界处理室，其中晶片暴露于处理室中的溶液。

公开(公告)号：US06550484B1

公开(公告)日：2003-04-22

申请号：US10011499

申请日：2001-12-07

Applicant: Sanjay Gopinath ,  Patrick A. Van Cleemput ,  Francisco Juarez ,  Krishnan Shrinivasan

Inventor： Sanjay Gopinath ,  Patrick A. Van Cleemput ,  Francisco Juarez ,  Krishnan Shrinivasan

IPC: B08B600

CPC classification number: H01L21/68735 ,  H01L21/67126

Abstract: The present invention pertains to apparatus and methods for maintaining wafer back side, bevel, and front side edge exclusion during supercritical fluid processing. Apparatus of the invention include a pedestal and an exclusion ring. When the exclusion ring is engaged with the pedestal a channel is formed. A reactant-free supercritical fluid is passed through the channel and over a circumferential front edge of a wafer. The flow of reactant-free supercritical fluid protects the bevel and circumferential front edge of the wafer from exposure to reactants in a supercritical processing medium. The back side of the wafer is protected by contact with the pedestal and the flow of reactant-free supercritical fluid. Exclusion rings of the invention, when engaged with their corresponding pedestals make no or very little physical contact with the wafer front side.

Abstract translation: 本发明涉及用于在超临界流体处理期间保持晶片背面，斜面和前侧边缘排除的装置和方法。 本发明的装置包括基座和排阻环。 当排除环与基座接合时，形成通道。 无反应物的超临界流体通过通道并在晶片的周向前边缘上方。 无反应物的超临界流体的流动保护晶片的斜面和周向前边缘暴露于超临界处理介质中的反应物。 通过与基座接触和无反应物的超临界流体的流动来保护晶片的背面。 当与其对应的基座接合时，本发明的排除环与晶片正面没有任何或很少的物理接触。

公开(公告)号：US08629068B1

公开(公告)日：2014-01-14

申请号：US13886694

申请日：2013-05-03

Applicant: Krishnan Shrinivasan ,  Michael Rivkin ,  Eugene Smargiassi ,  Mohamed Sabri

Inventor： Krishnan Shrinivasan ,  Michael Rivkin ,  Eugene Smargiassi ,  Mohamed Sabri

IPC: H01L21/00 ,  H01L21/331 ,  C08F2/46 ,  B05D3/06

CPC classification number: H01L21/02348 ,  C23C16/345 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/3105 ,  H01L21/67115 ,  H01L21/68764 ,  H01L21/68771

Abstract: The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.

Abstract translation: 本发明提供了在衬底上制备低k电介质材料的改进方法。 该方法涉及多次操作紫外线固化过程，其中UV强度，晶片衬底温度和其它条件可在每次操作中独立调制。 在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。 在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。 在某些实施例中，固化发生在多工位UV室中，其中UV强度和衬底温度可以在每个工位单独控制。