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    Circular groove pressing mechanism and method for sputtering target manufacturing
    1.
    发明授权
    Circular groove pressing mechanism and method for sputtering target manufacturing 失效
    圆形槽压制机构及其制造方法

    公开(公告)号：US08453487B2

    公开(公告)日：2013-06-04

    申请号：US12998328

    申请日：2009-10-09

    申请人： Eugene Y. Ivanov ,  Erich Theado ,  David B. Smathers

    发明人： Eugene Y. Ivanov ,  Erich Theado ,  David B. Smathers

    IPC分类号： B21D37/00 ,  B21D31/00

    CPC分类号： B21D17/02 ,  B21D13/02 ,  B21D22/02 ,  C23C14/3407

    摘要： A method of making metal target blank using circular groove pressing includes pressing a metal or metal alloy target blank in a first circular grooved pressing die set into a first concentric corrugated shape while maintaining an original diameter of the target blank to create concentric rings of shear deformation in the target blank. Forces are then applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition. The target blank is pressed in a second circular grooved die set into a second concentric corrugated shape while maintaining the original diameter of the target blank, wherein the second die set has a groove pattern offset from a groove pattern of the first die set so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed. Forces are again applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition.

    摘要翻译： 使用圆形凹槽压制制造金属靶坯的方法包括将金属或金属合金靶材坯料压在设置成第一同心波纹形状的第一圆形沟槽压模中，同时保持目标坯料的原始直径以产生剪切变形的同心环 在目标空白。 然后将力施加到同心的波纹状目标坯料上，足以在保持目标坯料的原始直径以将目标坯料恢复到基本平坦的状态的同时用平坦的模具组件基本上平坦化目标坯料。 目标坯料被压在第二圆形槽模具中，同时保持目标坯料的原始直径，其中第二模具组具有从第一模具组的凹槽图案偏移的凹槽图案，以便于 在目标坯料的以前没有变形的区域中产生剪切变形的同心环。 力再次施加到同心的波纹状目标坯料上，足以使平板模具基本上平坦化目标坯料，同时保持目标坯料的原始直径以将目标坯料恢复到基本平坦的状态。

    CIRCULAR GROOVE PRESSING MECHANISM AND METHOD FOR SPUTTERING TARGET MANUFACTURING
    2.
    发明申请
    CIRCULAR GROOVE PRESSING MECHANISM AND METHOD FOR SPUTTERING TARGET MANUFACTURING 失效
    圆锥滚子压力机构及喷射目标制造方法

    公开(公告)号：US20110219847A1

    公开(公告)日：2011-09-15

    申请号：US12998328

    申请日：2009-10-09

    申请人： Eugene Y. Ivanov ,  Erich Theado ,  David B. Smathers

    发明人： Eugene Y. Ivanov ,  Erich Theado ,  David B. Smathers

    IPC分类号： B21D37/00 ,  B21D31/00

    CPC分类号： B21D17/02 ,  B21D13/02 ,  B21D22/02 ,  C23C14/3407

    摘要： A method of making metal target blank using circular groove pressing includes pressing a metal or metal alloy target blank in a first circular grooved pressing die set into a first concentric corrugated shape while maintaining an original diameter of the target blank to create concentric rings of shear deformation in the target blank. Forces are then applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition. The target blank is pressed in a second circular grooved die set into a second concentric corrugated shape while maintaining the original diameter of the target blank, wherein the second die set has a groove pattern offset from a groove pattern of the first die set so as to create concentric rings of shear deformation in areas of the target blank which were not previously deformed. Forces are again applied to the concentric corrugated target blank sufficient to substantially flatten the target blank with a flat die set while maintaining the original diameter of the target blank to restore the target blank to a substantially flat condition.

    摘要翻译： 使用圆形凹槽压制制造金属靶坯的方法包括将金属或金属合金靶材坯料压在设置成第一同心波纹形状的第一圆形沟槽压模中，同时保持目标坯料的原始直径以产生剪切变形的同心环 在目标空白。 然后将力施加到同心的波纹状目标坯料上，足以在保持目标坯料的原始直径以将目标坯料恢复到基本平坦的状态的同时用平坦的模具组件基本上平坦化目标坯料。 目标坯料被压在第二圆形槽模具中，同时保持目标坯料的原始直径，其中第二模具组具有从第一模具组的凹槽图案偏移的凹槽图案，以便于 在目标坯料的以前没有变形的区域中产生剪切变形的同心环。 力再次施加到同心的波纹状目标坯料上，足以使平板模具基本上平坦化目标坯料，同时保持目标坯料的原始直径以将目标坯料恢复到基本平坦的状态。

    Diffusion-bonded sputter target assembly and method of manufacturing
    3.
    发明授权
    Diffusion-bonded sputter target assembly and method of manufacturing 有权
    扩散焊接溅射靶组件及其制造方法

    公开(公告)号：US09546418B2

    公开(公告)日：2017-01-17

    申请号：US13984961

    申请日：2012-02-09

    申请人： Weifang Miao ,  David B. Smathers ,  Eugene Y. Ivanov ,  Erich Theado ,  Robert S. Bailey ,  Jeff Hart

    发明人： Weifang Miao ,  David B. Smathers ,  Eugene Y. Ivanov ,  Erich Theado ,  Robert S. Bailey ,  Jeff Hart

    IPC分类号： C23C14/24 ,  C23C14/34 ,  H01J37/34

    CPC分类号： H01J37/3426 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3423 ,  H01J37/3435

    摘要： A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al interlayer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

    摘要翻译： 提供制造扩散接合溅射靶组件的方法。 包括第一金属或合金的目标坯料具有限定溅射表面的第一表面和第二表面。 第二个金属或合金被放置在靶坯周围。 靠近位于第二目标表面旁边的第二金属或合金提供背板。 然后将该组件扩散接合，并且去除覆盖靶的溅射表面的第二金属的一部分以露出靶溅射表面。 W靶或W合金靶/ Ti或Ti合金背板组件设置有位于W或W合金靶和背衬板之间的Al中间层。 该组件的粘合强度超过50MPa。

    DIFFUSION-BONDED SPUTTER TARGET ASSEMBLY AND METHOD OF MANUFACTURING
    4.
    发明申请
    DIFFUSION-BONDED SPUTTER TARGET ASSEMBLY AND METHOD OF MANUFACTURING 有权
    扩散接头的溅射器目标组件及其制造方法

    公开(公告)号：US20140034490A1

    公开(公告)日：2014-02-06

    申请号：US13984961

    申请日：2012-02-09

    申请人： Weifang Miao ,  David B. Smathers ,  Eugene Y. Ivanov ,  Erich Theado ,  Robert S. Bailey ,  Jeff Hart

    发明人： Weifang Miao ,  David B. Smathers ,  Eugene Y. Ivanov ,  Erich Theado ,  Robert S. Bailey ,  Jeff Hart

    IPC分类号： C23C14/34

    CPC分类号： H01J37/3426 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3423 ,  H01J37/3435

    摘要： A method of making a diffusion bonded sputter target assembly is provided. A target blank comprising a first metal or alloy has a first surface defining a sputtering surface and a second surface. A second metal or alloy is placed around the target blank. A backing plate is provided adjacent the second metal or alloy that is positioned alongside of the second target surface. This assembly is then diffusion bonded, and a portion of the second metal overlying the sputtering surface of the target is removed to expose the target sputtering surface. W target or W alloy target/Ti or Ti alloy backing plate assemblies are provided with an Al inter-layer positioned intermediate the W or W alloy target and backing plate. The assembly has a bond strength exceeding 50 MPa.

    摘要翻译： 提供制造扩散接合溅射靶组件的方法。 包括第一金属或合金的目标坯料具有限定溅射表面的第一表面和第二表面。 第二个金属或合金被放置在靶坯周围。 靠近位于第二目标表面旁边的第二金属或合金提供背板。 然后将该组件扩散接合，并且去除覆盖靶的溅射表面的第二金属的一部分以露出靶溅射表面。 W靶或W合金靶/ Ti或Ti合金背板组件设置有位于W或W合金靶和衬板之间的Al层间。 该组件的粘合强度超过50MPa。

    Sputtering Target with an Insulating Ring and a Gap Between the Ring and the Target
    6.
    发明申请
    Sputtering Target with an Insulating Ring and a Gap Between the Ring and the Target 有权
    溅射靶与绝缘环和环与目标之间的间隙

    公开(公告)号：US20080164146A1

    公开(公告)日：2008-07-10

    申请号：US11884799

    申请日：2006-02-28

    申请人： Eugene Y. Ivanov ,  Erich Theado ,  Harry W. Conard ,  John E. Poole

    发明人： Eugene Y. Ivanov ,  Erich Theado ,  Harry W. Conard ,  John E. Poole

    IPC分类号： C23C14/34

    CPC分类号： H01J37/34 ,  H01J37/3414

    摘要： A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target.

    摘要翻译： 用于等离子体气相沉积（PVD）的溅射等离子体反应器，其具有PVD靶，陶瓷环和PVD室壁之间改进的界面。 反应器包括PVD室壁和PVD靶，其中与PVD室壁结合的目标物形成真空室，并且其中至少面对真空室的靶的部分由待溅射的材料组成。 反应器还包括定位在靶和PVD室壁之间的绝缘陶瓷环。 设置第一O形环以在靶和绝缘环之间建立真空密封，并且提供第二O形环以在绝缘环和PVD室壁之间建立真空密封。 至少一个间隔件定位在目标和绝缘环之间以保持绝缘环和靶之间的间隙G. 间隔件由合适的低摩擦系数材料制成，并且可以抑制否则沿陶瓷环和靶之间的界面发生的黑色标记，划痕等。

    SPUTTERING TARGET WITH AN INSULATING RING AND A GAP BETWEEN THE RING AND THE TARGET
    8.
    发明申请
    SPUTTERING TARGET WITH AN INSULATING RING AND A GAP BETWEEN THE RING AND THE TARGET 审中-公开
    具有绝缘环的喷射目标和环与目标之间的差距

    公开(公告)号：US20110139614A1

    公开(公告)日：2011-06-16

    申请号：US13031459

    申请日：2011-02-21

    申请人： Eugene Y. Ivanov ,  Erich Theado ,  Harry W. Conard ,  John E. Poole

    发明人： Eugene Y. Ivanov ,  Erich Theado ,  Harry W. Conard ,  John E. Poole

    IPC分类号： C23C14/34

    CPC分类号： H01J37/34 ,  H01J37/3414

    摘要： A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target.

    摘要翻译： 用于等离子体气相沉积（PVD）的溅射等离子体反应器，其具有PVD靶，陶瓷环和PVD室壁之间改进的界面。 反应器包括PVD室壁和PVD靶，其中与PVD室壁结合的目标物形成真空室，并且其中至少面对真空室的靶的部分由待溅射的材料组成。 反应器还包括定位在靶和PVD室壁之间的绝缘陶瓷环。 设置第一O形环以在靶和绝缘环之间建立真空密封，并且提供第二O形环以在绝缘环和PVD室壁之间建立真空密封。 至少一个间隔件定位在目标和绝缘环之间以保持绝缘环和靶之间的间隙G. 间隔件由合适的低摩擦系数材料制成，并且可以抑制否则沿陶瓷环和靶之间的界面发生的黑色标记，划痕等。

    Sputtering target with an insulating ring and a gap between the ring and the target
    9.
    发明授权
    Sputtering target with an insulating ring and a gap between the ring and the target 有权
    溅射靶与绝缘环和环与目标之间的间隙

    公开(公告)号：US07922881B2

    公开(公告)日：2011-04-12

    申请号：US11884799

    申请日：2006-02-28

    申请人： Eugene Y. Ivanov ,  Erich Theado ,  Harry W. Conard ,  John E. Poole

    发明人： Eugene Y. Ivanov ,  Erich Theado ,  Harry W. Conard ,  John E. Poole

    IPC分类号： C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/00

    CPC分类号： H01J37/34 ,  H01J37/3414

    摘要： A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target.

    摘要翻译： 用于等离子体气相沉积（PVD）的溅射等离子体反应器，其具有PVD靶，陶瓷环和PVD室壁之间改进的界面。 反应器包括PVD室壁和PVD靶，其中与PVD室壁结合的目标物形成真空室，并且其中至少面对真空室的靶的部分由待溅射的材料组成。 反应器还包括定位在靶和PVD室壁之间的绝缘陶瓷环。 设置第一O形环以在靶和绝缘环之间建立真空密封，并且提供第二O形环以在绝缘环和PVD室壁之间建立真空密封。 至少一个间隔件定位在目标和绝缘环之间以保持绝缘环和靶之间的间隙G. 间隔件由合适的低摩擦系数材料制成，并且可以抑制否则沿陶瓷环和靶之间的界面发生的黑色标记，划痕等。