公开(公告)号：US10559584B2

公开(公告)日：2020-02-11

申请号：US15426797

申请日：2017-02-07

申请人： Eun Yeoung Choi ,  Bio Kim ,  Young Wan Kim ,  Jung Ho Kim ,  Young Seon Son ,  Jae Young Ahn ,  Byong Hyun Jang

发明人： Eun Yeoung Choi ,  Bio Kim ,  Young Wan Kim ,  Jung Ho Kim ,  Young Seon Son ,  Jae Young Ahn ,  Byong Hyun Jang

IPC分类号： H01L27/11582 ,  H01L21/28 ,  H01L29/423

摘要： A semiconductor device including a dielectric layer is provided. The semiconductor device includes a stack structure, and a vertical structure within the stack structure. The vertical structure includes a lower region having a first width and an upper region having a second width, greater than the first width. The vertical structure further includes two dielectric layers of which respective ratios of lower thicknesses in the lower region to upper thicknesses in the upper region are different from each other.

公开(公告)号：US20180012902A1

公开(公告)日：2018-01-11

申请号：US15426797

申请日：2017-02-07

申请人： Eun Yeoung Choi ,  Bio Kim ,  Young Wan Kim ,  Jung Ho Kim ,  Young Seon Son ,  Jae Young Ahn ,  Byong Hyun Jang

发明人： Eun Yeoung Choi ,  Bio Kim ,  Young Wan Kim ,  Jung Ho Kim ,  Young Seon Son ,  Jae Young Ahn ,  Byong Hyun Jang

IPC分类号： H01L29/423 ,  H01L21/28

CPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L29/40117 ,  H01L29/4234 ,  H01L29/42368

摘要： A semiconductor device including a dielectric layer is provided. The semiconductor device includes a stack structure, and a vertical structure within the stack structure. The vertical structure includes a lower region having a first width and an upper region having a second width, greater than the first width. The vertical structure further includes two dielectric layers of which respective ratios of lower thicknesses in the lower region to upper thicknesses in the upper region are different from each other.