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公开(公告)号：US20210135096A1
公开(公告)日：2021-05-06
申请号：US17120959
申请日：2020-12-14
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
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2.发明申请公开(公告)号：US20200295255A1
公开(公告)日：2020-09-17
申请号：US16890215
申请日：2020-06-02
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (1) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may he disposed on the first layer.
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公开(公告)号：US20210111223A1
公开(公告)日：2021-04-15
申请号：US17131926
申请日：2020-12-23
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Sanjeev AGGARWAL , Han-Jong CHIA , Jon M. SLAUGHTER , Renu WHIG
Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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Patent Agency Ranking
4.发明申请公开(公告)号：US20190123266A1
公开(公告)日：2019-04-25
申请号：US16225670
申请日：2018-12-19
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
CPC classification number: H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
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公开(公告)号：US20230225135A1
公开(公告)日：2023-07-13
申请号：US18185725
申请日：2023-03-17
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Sanjeev AGGARWAL , Han-Jong CHIA , Jon M. SLAUGHTER , Renu WHIG
Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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公开(公告)号：US20200266235A1
公开(公告)日：2020-08-20
申请号：US16870099
申请日：2020-05-08
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Sanjeev AGGARWAL , Han-Jong CHIA , Jon M. SLAUGHTER , Renu WHIG
Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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公开(公告)号：US20200043979A1
公开(公告)日：2020-02-06
申请号：US16601848
申请日：2019-10-15
Applicant: Everspin Technologies, Inc.
Inventor： Jijun SUN , Sanjeev AGGARWAL , Han-Jong CHIA , Jon M. SLAUGHTER , Renu WHIG
Abstract: A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
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8.发明申请公开(公告)号：US20180026180A1
公开(公告)日：2018-01-25
申请号：US15722191
申请日：2017-10-02
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
CPC classification number: H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
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