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1.发明申请公开(公告)号：US20190123266A1
公开(公告)日：2019-04-25
申请号：US16225670
申请日：2018-12-19
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
CPC classification number: H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
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2.发明申请公开(公告)号：US20180026180A1
公开(公告)日：2018-01-25
申请号：US15722191
申请日：2017-10-02
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
CPC classification number: H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
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3.发明申请公开(公告)号：US20200295255A1
公开(公告)日：2020-09-17
申请号：US16890215
申请日：2020-06-02
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (1) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may he disposed on the first layer.
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公开(公告)号：US20210135096A1
公开(公告)日：2021-05-06
申请号：US17120959
申请日：2020-12-14
Applicant: Everspin Technologies, Inc.
Inventor： Srinivas V. PIETAMBARAM , Bengt J. AKERMAN , Renu WHIG , Jason A. JANESKY , Nicholas D. RIZZO , Jon M. SLAUGHTER
Abstract: A magnetoresistive magnetic tunnel junction (MTJ) stack includes a free magnetic region, a fixed magnetic region, and a dielectric layer positioned between the free magnetic region and the fixed magnetic region. In one aspect, the fixed magnetic region consists essentially of an unpinned, fixed synthetic anti-ferromagnetic (SAF) structure which comprises (i) a first layer of one or more ferromagnetic materials, including cobalt, (ii) a multi-layer region including a plurality of layers of ferromagnetic materials, wherein the plurality of layers of ferromagnetic materials include a layer of one or more ferromagnetic materials including cobalt, and (iii) an anti-ferromagnetic coupling layer disposed between the first layer and the multi-layer region. The free magnetic region may include a circular shape, the one or more ferromagnetic materials of the first layer may include cobalt, iron and boron, and the dielectric layer may be disposed on the first layer.
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