公开(公告)号：US20210375342A1

公开(公告)日：2021-12-02

申请号：US17255915

申请日：2019-06-27

Applicant: Everspin Technologies, Inc.

Inventor： Jijun SUN ,  Frederick MANCOFF ,  Jason JANESKY ,  Kevin CONLEY ,  Lu HUI ,  Sumio IKEGAWA

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12

Abstract: Aspects of the present disclosure are directed to magnetic tunnel junction (MTJ) structures comprising multiple MTJ bits connected in series. For example, a magnetic tunnel junction (MTJ) stack according to the present disclosure may include at least a first MTJ bit and a second MTJ bit stacked above the first MTJ bit, and a resistance state of the MTJ stack may be read by passing a single read current through both the first MTJ bit and the second MTJ bit.