公开(公告)号：US20210375342A1

公开(公告)日：2021-12-02

申请号：US17255915

申请日：2019-06-27

Applicant: Everspin Technologies, Inc.

Inventor： Jijun SUN ,  Frederick MANCOFF ,  Jason JANESKY ,  Kevin CONLEY ,  Lu HUI ,  Sumio IKEGAWA

IPC: G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12

Abstract: Aspects of the present disclosure are directed to magnetic tunnel junction (MTJ) structures comprising multiple MTJ bits connected in series. For example, a magnetic tunnel junction (MTJ) stack according to the present disclosure may include at least a first MTJ bit and a second MTJ bit stacked above the first MTJ bit, and a resistance state of the MTJ stack may be read by passing a single read current through both the first MTJ bit and the second MTJ bit.

公开(公告)号：US20190221609A1

公开(公告)日：2019-07-18

申请号：US16245783

申请日：2019-01-11

Applicant: Everspin Technologies, Inc.

Inventor： Sanjeev AGGARWAL ,  Kevin CONLEY ,  Sarin A. DESHPANDE

IPC: H01L27/22 ,  H01L43/02 ,  H01L23/522 ,  H01L23/528 ,  H01L43/12 ,  H01L21/768 ,  H01F10/32 ,  G11C11/16 ,  H01F41/34

CPC classification number: H01L27/228 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/34 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/222 ,  H01L43/02 ,  H01L43/12

Abstract: A magnetoresistive device may include multiple magnetic tunnel junction (MTJ) stacks separated from each other by one or more dielectric material layers and electrically conductive vias extending through the one more dielectric material layers. Each MTJ stack may include multiple MTJ bits arranged one on top of another and the electrically conductive vias may be configured to electrically access each MTJ bit of the multiple MTJ stacks.