公开(公告)号：US5502330A

公开(公告)日：1996-03-26

申请号：US473865

申请日：1995-06-07

申请人： F. Scott Johnson ,  Kelly Taylor

发明人： F. Scott Johnson ,  Kelly Taylor

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/10 ,  H01L29/732 ,  H01L27/01 ,  H01L27/12

CPC分类号： H01L29/66272 ,  H01L29/1004 ,  Y10S148/01 ,  Y10S148/011

摘要： A bipolar transistor (100) and a method for forming the same. A base-link diffusion source layer (118) is formed over a portion of the collector region (102). The base-link diffusion source layer (118) comprises a material that is capable of being used as a dopant source and is capable of being etched selectively with respect to silicon. A barrier layer (119) is formed over the base-link diffusion source layer (118). A base electrode (114) is formed over at least one end portion of the barrier layer (119) and base-link diffusion source layer (118) and the exposed portions of the barrier layer (119) and underlying base-link diffusion source layer (118) are removed. An extrinsic base region (110) is diffused from the base electrode (114) and a base link-up region (112) is diffused from the base-link diffusion source layer (118). Processing may then continue to form an intrinsic base region (108), emitter region (126), and emitter electrode (124).

摘要翻译： 双极晶体管（100）及其形成方法。 在集电极区域（102）的一部分上形成基极 - 链路扩散源层（118）。 基极 - 链路扩散源层（118）包括能够用作掺杂剂源并且能够相对于硅选择性蚀刻的材料。 在基极 - 链路扩散源层（118）之上形成阻挡层（119）。 基底电极（114）形成在阻挡层（119）和基极 - 链路扩散源层（118）的至少一个端部和阻挡层（119）的暴露部分和下面的基底 - 链路扩散源层 （118）被去除。 外部基极区域（110）从基极（114）扩散，基极连接区域（112）从基极扩散源层（118）扩散。 然后，处理可以继续形成本征基极区域（108），发射极区域（126）和发射极电极（124）。

公开(公告)号：US06645804B1

公开(公告)日：2003-11-11

申请号：US10136642

申请日：2002-05-01

申请人： F. Scott Johnson ,  Luigi Columbo ,  Doug Prinslow ,  Kelly Taylor ,  Van-Joy Tsai

发明人： F. Scott Johnson ,  Luigi Columbo ,  Doug Prinslow ,  Kelly Taylor ,  Van-Joy Tsai

IPC分类号： H01L218242

CPC分类号： H01L28/40 ,  H01L27/0805

摘要： Disclosed is a system for fabricating an integrated circuit capacitor (100). An electrode layer (102) is formed in the integrated circuit. An anti-reflective coating (108) is deposited over the electrode layer (102). An electrode top plate (104) is formed over the anti-reflective coating (108).

摘要翻译： 公开了一种用于制造集成电路电容器（100）的系统。 在集成电路中形成电极层（102）。 在电极层（102）上方沉积抗反射涂层（108）。 在抗反射涂层（108）上形成电极顶板（104）。

公开(公告)号：US5593905A

公开(公告)日：1997-01-14

申请号：US392597

申请日：1995-02-23

申请人： F. Scott Johnson ,  Kelly Taylor

发明人： F. Scott Johnson ,  Kelly Taylor

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/10 ,  H01L29/732 ,  H01L21/265

CPC分类号： H01L29/66272 ,  H01L29/1004 ,  Y10S148/01 ,  Y10S148/011

摘要： A bipolar transistor (100) and a method for forming the same. A base-link diffusion source layer (118) is formed over a portion of the collector region (102). The base-link diffusion source layer (118) comprises a material that is capable of being used as a dopant source and is capable of being etched selectively with respect to silicon. A barrier layer (119) is formed over the base-link diffusion source layer (118).A base electrode (114) is formed over at least one end portion of the barrier layer (119) and base-link diffusion source layer (118) and the exposed portions of the barrier layer (119) and underlying base-link diffusion source layer (118) are removed. An extrinsic base region (110) is diffused from the base electrode (114) and a base link-up region (112) is diffused from the base-link diffusion source layer (118). Processing may then continue to fore an intrinsic base region (108), emitter region (126), and emitter electrode (124).

摘要翻译： 双极晶体管（100）及其形成方法。 在集电极区域（102）的一部分上形成基极 - 链路扩散源层（118）。 基极 - 链路扩散源层（118）包括能够用作掺杂剂源并且能够相对于硅选择性蚀刻的材料。 在该基极连接扩散源层（118）的上方形成阻挡层（119）。在阻挡层（119）的至少一个端部与基极扩散源层（118）的至少一个端部形成有基极 ）并且去除了阻挡层（119）和下面的基底 - 链路扩散源层（118）的暴露部分。 外部基极区域（110）从基极（114）扩散，基极连接区域（112）从基极扩散源层（118）扩散。 然后处理可以继续在本征基区（108），发射极区（126）和发射极（124）之前。

公开(公告)号：US20150150311A1

公开(公告)日：2015-06-04

申请号：US14535774

申请日：2014-11-07

申请人： Kelly Taylor

发明人： Kelly Taylor

IPC分类号： A41C3/12

CPC分类号： A41C3/065

摘要： An illuminated nipple cover that directs light to a skin contact member, which may be translucent or clear. The skin contact member is covered with an opaque cover so the skin contact member is illuminated, and the opaque cover blocks light from being seen from the skin contact member.

摘要翻译： 一个照明的乳头罩，将光线引导到皮肤接触部件，这可能是半透明或透明的。 皮肤接触构件被不透明的覆盖物覆盖，使得皮肤接触构件被照亮，并且不透明的覆盖物阻挡从皮肤接触构件看到的光。

公开(公告)号：US20060014378A1

公开(公告)日：2006-01-19

申请号：US10890663

申请日：2004-07-14

申请人： Sanjeev Aggarwal ,  Kelly Taylor ,  Asad Haider ,  Alfred Griffin

发明人： Sanjeev Aggarwal ,  Kelly Taylor ,  Asad Haider ,  Alfred Griffin

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/76865 ,  H01L21/76873

摘要： A method is disclosed to form a seed layer for an integrated circuit. The method may include depositing a metal seed layer (106) over a barrier layer (104) such that the metal seed layer (106) has a greater thickness along a top surface portion (114) of at least one recessed feature (102) formed in the substrate that is substantially coplanar with the substrate than a sidewall surface portion (112) of the at least one recessed feature (102). A portion of the metal seed layer (106) is etched from the top surface portion (114) of the at least one recessed feature (102) to improve coverage of the metal seed layer (106) along the sidewall surface portion (112) of the at least one recessed feature (102) and to mitigate overhang of the metal seed layer.

摘要翻译： 公开了形成用于集成电路的种子层的方法。 该方法可以包括在阻挡层（104）上沉积金属种子层（106），使得金属籽晶层（106）沿着形成的至少一个凹形特征（102）的顶表面部分（114）具有更大的厚度 在与所述至少一个凹陷特征（102）的侧壁表面部分（112）基本共面的基底中。 从所述至少一个凹陷特征（102）的顶表面部分（114）蚀刻所述金属种子层（106）的一部分，以改善所述金属种子层（106）沿着所述侧壁表面部分（112）的覆盖范围 所述至少一个凹陷特征（102）并且减轻所述金属种子层的突出部分。

公开(公告)号：USD366507S

公开(公告)日：1996-01-23

申请号：US34213

申请日：1995-01-30

申请人： Edward G. van Nimwegen ,  Kelly Taylor

设计人： Edward G. van Nimwegen ,  Kelly Taylor

公开(公告)号：USD351882S

公开(公告)日：1994-10-25

申请号：US011300

申请日：1993-07-30

申请人： Kelly Taylor ,  Barry D. Mower ,  Donny R. Matherne

设计人： Kelly Taylor ,  Barry D. Mower ,  Donny R. Matherne

公开(公告)号：US20210219645A1

公开(公告)日：2021-07-22

申请号：US16748182

申请日：2020-01-21

申请人： Kelly Taylor

发明人： Kelly Taylor

IPC分类号： A42B1/00

摘要： An interchangeable patch hat apparatus for providing variable designs for a single hat includes a hat body having a front portion with a patch aperture extending from an outer surface through an inner surface. A patch has an outer face, an inner face, and a patch edge. The patch is dimensioned to be larger than the patch aperture. A plurality of engagement members comprises a plurality of first engagement members coupled to the patch proximal the patch edge and a plurality of second engagement members coupled to the front portion of the hat body proximal the patch aperture. The first engagement members are selectively engageable with the second engagement members to couple the patch to the hat body and cover the patch aperture. The patch is thus interchangeable to offer a choice of logo or design displayed on the apparatus.

公开(公告)号：US20110171061A1

公开(公告)日：2011-07-14

申请号：US13073211

申请日：2011-03-28

申请人： Annette Gertge ,  Kelly Taylor ,  Joe O'Neal

发明人： Annette Gertge ,  Kelly Taylor ,  Joe O'Neal

IPC分类号： C22C30/02

CPC分类号： C22C5/02 ,  C22C9/06 ,  C22C19/03 ,  C22C30/02 ,  C22C30/06

摘要： A gold alloy that is usable for jewelry and other applications. The gold alloy is made by combining Y % gold with Z % of a master alloy, wherein Y+Z=100. The gold alloy may be made by first forming the master alloy and then mixing the gold with the master alloy. The gold alloy may also be made by mixing gold with the elements of the master alloy without first forming the master alloy. In another embodiment, the master alloy used to make a white gold (variable) karat alloy will include from about 23.33% to about 43.33% copper, from about 23.33% to about 43.33% nickel, from about 3.33% to about 23.33% zinc, and from about 10 to about 30% silver. Another embodiment of a master alloy used to make a white gold (variable) karat alloy will include from about 43.33% to about 66% copper, from about 8 to about 39.33% nickel, and from about 4.67% to about 36.67% zinc.

公开(公告)号：US20090317292A1

公开(公告)日：2009-12-24

申请号：US12143383

申请日：2008-06-20

申请人： Annette T. Gertge ,  Kelly Taylor ,  Joe O'Neal

发明人： Annette T. Gertge ,  Kelly Taylor ,  Joe O'Neal

IPC分类号： C22C5/02 ,  C22C9/00

CPC分类号： C22C5/02 ,  C22C9/06 ,  C22C19/03 ,  C22C30/02 ,  C22C30/06

摘要： A gold alloy that is usable for jewelry and other applications. The gold alloy is made by combining Y % gold with Z % of a master alloy, wherein Y+Z=100. The gold alloy may be made by first forming the master alloy and then mixing the gold with the master alloy. The gold alloy may also be made by mixing gold with the elements of the master alloy without first forming the master alloy. In another embodiment, the master alloy used to make a white gold (variable) karat alloy will include from about 23.33% to about 43.33% copper, from about 23.33% to about 43.33% nickel, from about 3.33% to about 23.33% zinc, and from about 10 to about 30% silver. Another embodiment of a master alloy used to make a white gold (variable) karat alloy will include from about 43.33% to about 66% copper, from about 8 to about 39.33% nickel, and from about 4.67% to about 36.67% zinc.

摘要翻译： 可用于珠宝和其他应用的金合金。 金合金是通过将Y％金与Z％的母合金组合而成的，其中Y + Z = 100。 金合金可以通过首先形成母合金然后将金与母合金混合而制成。 金合金也可以通过将金与母合金的元素混合而不首先形成母合金来制造。 在另一个实施方案中，用于制备白金（可变）karat合金的母合金将包括约23.33％至约43.33％的铜，约23.33％至约43.33％的镍，约3.33％至约23.33％的锌， 和约10至约30％的银。 用于制备白金（可变）karat合金的主合金的另一个实施方案将包括约43.33％至约66％的铜，约8至约39.33％的镍和约4.67％至约36.67％的锌。