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    PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES
    1.
    发明申请
    PROTECTION FOR THE EPITAXIAL STRUCTURE OF METAL DEVICES 审中-公开
    金属器件外延结构的保护

    公开(公告)号：US20120074384A1

    公开(公告)日：2012-03-29

    申请号：US13310552

    申请日：2011-12-02

    申请人： FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

    发明人： FENG-HSU FAN ,  Trung Tri Doan ,  Chuong Ann Tran ,  Chen-Fu Chu ,  Chao-Chen Cheng ,  Jiunn-Yl Chu ,  Wen-Huang Liu ,  Hao-Chun Cheng ,  Jul-Kang Yen

    IPC分类号： H01L33/06

    CPC分类号： H01L33/0079 ,  H01L33/405 ,  H01L33/44 ,  H01L33/64

    摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non-(or low) thermally conductive and/or non-(or low) electrically conductive carrier substrate that has been removed.

    摘要翻译： 提供了用于制造金属器件的技术，例如垂直发光二极管（VLED）器件，功率器件，激光二极管和垂直腔表面发射激光器件。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。 （或低）导电载体衬底。

    OPTOELECTRONIC DEVICE HAVING CURRENT BLOCKING INSULATION LAYER FOR UNIFORM TEMPERATURE DISTRIBUTION AND METHOD OF FABRICATION
    3.
    发明申请
    OPTOELECTRONIC DEVICE HAVING CURRENT BLOCKING INSULATION LAYER FOR UNIFORM TEMPERATURE DISTRIBUTION AND METHOD OF FABRICATION 审中-公开
    具有用于均匀温度分布的电流阻塞绝缘层的光电装置和制造方法

    公开(公告)号：US20130001510A1

    公开(公告)日：2013-01-03

    申请号：US13535794

    申请日：2012-06-28

    申请人： CHEN-FU CHU ,  FENG-HSU FAN

    发明人： CHEN-FU CHU ,  FENG-HSU FAN

    IPC分类号： H01L33/14 ,  H01L33/06

    CPC分类号： H01L33/405 ,  H01L33/007 ,  H01L33/145

    摘要： An optoelectronic device includes a conductive base, a reflective conductive layer on the conductive base, a first semiconductor layer on the conductive layer configured as a first confinement layer, an active layer on the first semiconductor layer configured to emit electromagnetic radiation, a second semiconductor layer on the active layer configured as a second confinement layer, an electrode on the second semiconductor layer, and a current blocking structure on the reflective conductive layer comprising a thin transparent insulation layer aligned with the electrode configured to block current flow from the electrode, to dissipate heat generated at an interface between the first semiconductor layer and the reflective conductive layer, and to transmit electromagnetic radiation reflected from the reflective conductive layer,

    摘要翻译： 光电子器件包括导电基底，导电基底上的反射导电层，导电层上的第一半导体层，被配置为第一限制层，第一半导体层上的有源层，被配置为发射电磁辐射;第二半导体层 在被配置为第二限制层的有源层上，第二半导体层上的电极和反射导电层上的电流阻挡结构包括与被配置为阻挡来自电极的电流的电极对准的薄透明绝缘层，以消散 在第一半导体层和反射导电层之间的界面处产生的热，并且传输从反射导电层反射的电磁辐射，