公开(公告)号：US20110101400A1

公开(公告)日：2011-05-05

申请号：US12986946

申请日：2011-01-07

申请人： CHEN-FU CHU ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng

发明人： CHEN-FU CHU ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng

IPC分类号： H01L33/58

CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/22

摘要： Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

摘要翻译： 公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

公开(公告)号：US20080035950A1

公开(公告)日：2008-02-14

申请号：US11761897

申请日：2007-06-12

申请人： CHEN-FU CHU ,  Wen-Huang Liu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Trung Doan

发明人： CHEN-FU CHU ,  Wen-Huang Liu ,  Jiunn-Yi Chu ,  Chao-Chen Cheng ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Trung Doan

IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L31/00

CPC分类号： H01L33/0079

摘要： Techniques for fabricating contacts on inverted configuration surfaces of GaN layers of semiconductor devices are provided. An n-doped GaN layer may be formed with a surface exposed by removing a substrate on which the n-doped GaN layer was formed. The crystal structure of such a surface may have a significantly different configuration than the surface of an as-deposited p-doped GaN layer.

摘要翻译： 提供了用于在半导体器件的GaN层的倒置配置表面上制造接触的技术。 可以通过去除其上形成有n掺杂GaN层的衬底而暴露出表面的n掺杂GaN层。 这种表面的晶体结构可以具有与沉积的p掺杂的GaN层的表面显着不同的构造。

公开(公告)号：US20130001510A1

公开(公告)日：2013-01-03

申请号：US13535794

申请日：2012-06-28

申请人： CHEN-FU CHU ,  FENG-HSU FAN

发明人： CHEN-FU CHU ,  FENG-HSU FAN

IPC分类号： H01L33/14 ,  H01L33/06

CPC分类号： H01L33/405 ,  H01L33/007 ,  H01L33/145

摘要： An optoelectronic device includes a conductive base, a reflective conductive layer on the conductive base, a first semiconductor layer on the conductive layer configured as a first confinement layer, an active layer on the first semiconductor layer configured to emit electromagnetic radiation, a second semiconductor layer on the active layer configured as a second confinement layer, an electrode on the second semiconductor layer, and a current blocking structure on the reflective conductive layer comprising a thin transparent insulation layer aligned with the electrode configured to block current flow from the electrode, to dissipate heat generated at an interface between the first semiconductor layer and the reflective conductive layer, and to transmit electromagnetic radiation reflected from the reflective conductive layer,

摘要翻译： 光电子器件包括导电基底，导电基底上的反射导电层，导电层上的第一半导体层，被配置为第一限制层，第一半导体层上的有源层，被配置为发射电磁辐射;第二半导体层 在被配置为第二限制层的有源层上，第二半导体层上的电极和反射导电层上的电流阻挡结构包括与被配置为阻挡来自电极的电流的电极对准的薄透明绝缘层，以消散 在第一半导体层和反射导电层之间的界面处产生的热，并且传输从反射导电层反射的电磁辐射，

公开(公告)号：US20080194051A1

公开(公告)日：2008-08-14

申请号：US11548647

申请日：2006-10-11

申请人： CHEN-FU CHU ,  TRUNG TRI DOAN ,  CHUONG ANH TRAN ,  CHAO-CHEN CHENG ,  JIUNN-YI CHU ,  WEN-HUANG LIU ,  HAO-CHUN CHENG ,  FENG-HSU FAN ,  JUI-KANG YEN

发明人： CHEN-FU CHU ,  TRUNG TRI DOAN ,  CHUONG ANH TRAN ,  CHAO-CHEN CHENG ,  JIUNN-YI CHU ,  WEN-HUANG LIU ,  HAO-CHUN CHENG ,  FENG-HSU FAN ,  JUI-KANG YEN

IPC分类号： H01L33/00 ,  H01L21/304

CPC分类号： H01L33/0095 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/12 ,  B23K2103/14 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/78 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/32341

摘要： Techniques for dicing wafer assemblies containing multiple metal device dies, such as vertical light-emitting diode (VLED), power device, laser diode, and vertical cavity surface emitting laser device dies, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, such techniques are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.

摘要翻译： 提供了用于切割包含多个金属器件管芯（例如垂直发光二极管（VLED）），功率器件，激光二极管和垂直腔表面发射激光器件管芯的晶片组件的技术。 相应地生产的器件可以比常规金属器件更高的产量和更高的性能受益，例如发光二极管的较高的亮度和增加的导热性。 此外，在具有原始非（或低）导热和/或非（或低）导电载体的金属器件的高散热率的情况下，这种技术可应用于GaN基电子器件 已被去除的底物。

公开(公告)号：US20080142814A1

公开(公告)日：2008-06-19

申请号：US11956962

申请日：2007-12-14

申请人： CHEN-FU CHU ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng

发明人： CHEN-FU CHU ,  Hao-Chun Cheng ,  Feng-Hsu Fan ,  Wen-Huang Liu ,  Chao-Chen Cheng

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/22

摘要： Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.

摘要翻译： 公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

公开(公告)号：US20110042803A1

公开(公告)日：2011-02-24

申请号：US12545949

申请日：2009-08-24

申请人： CHEN-FU CHU

发明人： CHEN-FU CHU

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/94 ,  H01L2224/0401 ,  H01L2224/05005 ,  H01L2224/0501 ,  H01L2224/0502 ,  H01L2224/05099 ,  H01L2224/05541 ,  H01L2224/0556 ,  H01L2224/0557 ,  H01L2224/05599 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/114 ,  H01L2224/116 ,  H01L2224/11831 ,  H01L2224/1184 ,  H01L2224/11849 ,  H01L2224/13009 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/274 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2224/05552

摘要： A method for fabricating a through interconnect on a semiconductor substrate includes the steps of forming a via on a first side of the substrate part way through the substrate, forming an electrically insulating layer on the first side and in the via, forming an electrically conductive layer at least partially lining the via, forming a first contact on the conductive layer in the via, and thinning the substrate from a second side at least to the insulating layer in the via. The method can also include the step of forming a second contact on a second side of the substrate in electrical contact with the first contact. The method can be performed on a semiconductor wafer to form a wafer scale interconnect component. In addition, the interconnect component can be used to construct semiconductor systems such as a light emitting diode (LED) systems.

摘要翻译： 一种用于在半导体衬底上制造贯通互连的方法包括以下步骤：在衬底的第一侧穿过衬底形成通孔，在第一侧和通孔上形成电绝缘层，形成导电层 至少部分地衬在所述通孔上，在所述通孔中的所述导电层上形成第一接触，以及将所述衬底从所述通孔中的至少绝缘层从第二侧变薄。 该方法还可以包括在与第一接触件电接触的基板的第二侧上形成第二接触的步骤。 该方法可以在半导体晶片上进行以形成晶片尺寸互连部件。 此外，互连部件可用于构造诸如发光二极管（LED）系统的半导体系统。