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公开(公告)号:US20230312423A1
公开(公告)日:2023-10-05
申请号:US17917880
申请日:2021-04-08
发明人: Wataru YAMAGISHI , Kazumasa MORI , Shunichi ETO
IPC分类号: C04B35/584 , G01R1/073 , G01R1/04 , C04B35/48
CPC分类号: C04B35/584 , G01R1/07371 , G01R1/0433 , C04B35/48 , C04B2235/3244 , C04B2235/3873 , C04B2235/762 , C04B2235/9607 , C04B2235/945
摘要: A ceramic containing, in mass %:
Si3N4: 20.0 to 60.0%,
ZrO2: 25.0 to 70.0%,
at least one selected from SiC and AlN: 2.0 to 17.0%, where AlN is 10.0% or less,
at least one selected from MgO, Y2O3, CeO2, CaO, HfO2, TiO2, Al2O3, SiO2, MoO3, CrO, CoO, ZnO, Ga2O3, Ta2O5, NiO and V2O5: 5.0 to 15.0%, wherein Fn calculated from the following equation (1) satisfies 0.02 to 0.40. This ceramic can be laser machined with high efficiency.
Fn=(SiC+3AlN)/(Si3N4+ZrO2) (1)-
公开(公告)号:US20240177974A1
公开(公告)日:2024-05-30
申请号:US18432159
申请日:2024-02-05
发明人: Wataru YAMAGISHI , Kazumasa MORI , Hitoshi KOUNO , Shunichi ETO
IPC分类号: H01J37/32 , C04B35/48 , C04B35/581 , C04B35/583 , C04B35/584 , H01L21/683
CPC分类号: H01J37/32477 , C04B35/48 , C04B35/581 , C04B35/583 , C04B35/584 , H01J37/32715 , H01L21/6833 , C04B2235/3244 , C04B2235/3826 , C04B2235/386 , C04B2235/3865 , C04B2235/3873 , C04B2235/94
摘要: A wafer support includes a base material including a machinable ceramic, a protective layer covering a surface of the base material, and conductive members and placed at least partially inside the base material. The protective layer includes a material that is less corrodible by plasma than the base material.
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公开(公告)号:US20210188714A1
公开(公告)日:2021-06-24
申请号:US16762802
申请日:2018-11-07
发明人: Wataru YAMAGISHI , Kazumasa MORI , Shunichi ETO
IPC分类号: C04B35/488 , G01R1/04 , G01R1/073 , C04B35/584
摘要: A ceramic contains, in mass percent: Si3N4: 20.0 to 60.0%, ZrO2: 25.0 to 70.0%, and one or more oxides selected from MgO, Y2O3, CeO2, CaO, HfO2, TiO2, Al2O3, SiO2, MoO3, CrO, CoO, ZnO, Ga2O3, Ta2O5, NiO, and V2O5: 5.0 to 15.0%. The ceramic has a coefficient of thermal expansion as high as that of silicon and an excellent mechanical strength, allows fine machining with high precision, and prevents particles from being produced.
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公开(公告)号:US20200241047A1
公开(公告)日:2020-07-30
申请号:US16757168
申请日:2018-10-19
发明人: Wataru YAMAGISHI , Kazumasa MORI , Shunichi ETO
IPC分类号: G01R1/073 , C04B35/583 , G01R31/28 , G01R1/067
摘要: A ceramic according to the present invention includes, in mass %, BN: 20.0 to 55.0%, SiC: 5.0 to 40.0%, ZrO2 and/or Si3N4: 3.0 to 60.0%. The ceramic has a coefficient of thermal expansion at −50 to 500° C. of 1.0×10−6 to 5.0×10−6/° C., is excellent in low electrostatic properties (106 to 1014 Ω·cm in volume resistivity) and free-machining properties, and is thus suitable to be used for, for example, a probe guiding member for guiding probes of a probe card, and a socket for package inspection.
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