公开(公告)号：US20180190918A1

公开(公告)日：2018-07-05

申请号：US15740611

申请日：2016-06-29

申请人： FLEXENABLE LIMITED ,  CAMBRIDGE ENTERPRISE LIMITED

发明人： Henning SIRRINGHAUS ,  Mark NIKOLKA ,  Iyad NASRALLAH ,  Jan JONGMAN

IPC分类号： H01L51/05 ,  H01L51/00

CPC分类号： H01L51/0558 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/002 ,  H01L51/0541

摘要： An electronic or optoelectronic device including a semiconductor layer, wherein the semiconductor layer comprises at least a semiconductive organic material, water species, and at least one additive in an amount of at least 0.1% by weight relative to the semiconductive organic material, which additive at least partly negates a charge carrier trapping effect caused by the water species on the semiconductive organic material.

公开(公告)号：US20210118912A1

公开(公告)日：2021-04-22

申请号：US16463670

申请日：2017-11-28

申请人： FLEXENABLE LIMITED

发明人： Jan JONGMAN ,  Brian ASPLIN

IPC分类号： H01L27/12 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05

摘要： A technique of producing a stack defining a plurality of TFTs including at least source/drain electrodes and addressing lines at a source/drain level, wherein the method comprises: forming a patterned source/drain level stack comprising at least a first layer over the support substrate and a second layer over the first layer, to define at least said source/drain electrodes and said addressing lines; depositing semiconductor channel material over at least said source/drain electrodes and said addressing lines; and patterning the layer of semiconductor channel material by a patterning process; wherein the material of the first layer is more resistant to removal by said patterning process than the material of said second layer.

公开(公告)号：US20170179231A1

公开(公告)日：2017-06-22

申请号：US15327263

申请日：2015-07-21

申请人： FLEXENABLE LIMITED

发明人： Jan JONGMAN ,  Anja WELLNER ,  Jens DIENELT ,  Karsten NEUMANN ,  Stephan RIEDEL

IPC分类号： H01L29/10 ,  H01L51/05 ,  H01L27/32

CPC分类号： H01L29/1054 ,  H01L27/3237 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3272 ,  H01L27/3274 ,  H01L51/0014 ,  H01L51/052 ,  H01L51/0533

摘要： A technique comprising: providing a stack of layers defining at least (a) source and drain electrodes, (b) gate electrode, and (c) semiconductor channel of at least one transistor; depositing one or more organic insulating layers over the stack; removing at least part of the stack in one or more selected regions by an ablation technique; depositing conductor material over the stack in at least the one or more ablated regions and one or more border regions immediately surrounding a respective ablated region; and depositing inorganic insulating material over the stack at least in the ablated regions and the border regions to cover the ablated regions and make direct contact with said conductor material in said one or more border regions all around the respective ablated region.

公开(公告)号：US20200238332A1

公开(公告)日：2020-07-30

申请号：US16493574

申请日：2018-03-14

申请人： FLEXENABLE LIMITED

发明人： Jan JONGMAN ,  Herve VANDEKERCKHOVE ,  Joffrey DURY

IPC分类号： B05D3/14 ,  H01L51/00 ,  H01L51/05 ,  C09D4/00 ,  C08K5/00

摘要： A technique comprising: depositing a first layer comprising a precursor to a cross-linked polymer on a substrate comprising at least a semiconductor material that provides one or more semiconductor channels for one or more transistors, wherein said first layer provides at least part of a gate dielectric for said one or more transistors; and exposing the first layer to an argon plasma to produce the cross-linked polymer from the precursor.