公开(公告)号：US10096731B2

公开(公告)日：2018-10-09

申请号：US15111975

申请日：2015-01-26

申请人： FLISOM AG

发明人： Roger Ziltener ,  Thomas Netter

IPC分类号： H01L31/18 ,  H01L31/0725 ,  H01L31/0687 ,  H01L31/0352 ,  H01L31/0463 ,  H01L31/0749

摘要： A method for vias and monolithic interconnects in thin-film optoelectronic devices (100, 200) wherein at least one line segment via hole (163, 165, 165′, 167) is formed by laser drilling and passes through front-contact layers (150, 152, 154, 156, 158) and semiconductive active layer (130), and wherein laser drilling causes forming a CIGS-type wall (132, 134, 136, 138) of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface (135) of the via hole, thereby forming a conductive path between at least a portion of front-contact and a portion of back-contact layers (120, 124, 126, 128, 129), forming a bump-shaped raised portion (155) at the surface of the front-contact layer, forming a raised portion (125, 127, 127′) of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy (155′) covering a portion of the front-contact layer (150). A thin-film CIGS device comprises at least one line segment via hole obtainable by the method.

公开(公告)号：US20150214409A1

公开(公告)日：2015-07-30

申请号：US14388022

申请日：2013-03-27

申请人： FLISOM AG

发明人： Reto Pfeiffer ,  Roger Ziltener ,  Thomas Netter

IPC分类号： H01L31/05 ,  G06F17/50 ,  H01L31/02

CPC分类号： H01L31/0516 ,  G06F17/5077 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/035272 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/0508 ,  Y02E10/50

摘要： A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistivity than th at of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100). The device (100) and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices (100) while increasing production yield, reliability, aesthetic appearance, and range of applications.

摘要翻译： 一种薄膜光电子模块器件（100）和包括至少三个单片互连的单元（104,106,108）的设计方法，其中至少一个单片互连线（250）描绘空间周期性或准周期波，并且其中 所述薄膜光电子模块装置（100）的光电子表面呈现具有基本上平行的单片互连线的曲线的至少一组至少三个区域（210,220,230）。 边界区域（210,230）的前接触片电阻率低于内部区域（220）的电阻率。 基本上平行的互连线的所述曲线可以包括三角形或圆形形状的峰值，小于基线周期的附加空间周期以及从一条曲线到相邻曲线的映射，例如在非矩形模块装置（100）的情况下， 。 设备（100）和设计方法有利于降低制造薄膜光电子模块设备（100）的成本和材料，同时提高产量，可靠性，美学外观和应用范围。

公开(公告)号：US09911881B2

公开(公告)日：2018-03-06

申请号：US14388022

申请日：2013-03-27

申请人： FLISOM AG

发明人： Reto Pfeiffer ,  Roger Ziltener ,  Thomas Netter

IPC分类号： H01L31/05 ,  H01L31/0465 ,  H01L31/0352 ,  H01L31/0463 ,  H01L31/0224 ,  H01L31/046 ,  G06F17/50 ,  H01L31/02

CPC分类号： H01L31/0516 ,  G06F17/5077 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/035272 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/0508 ,  Y02E10/50

摘要： A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100). The device (100) and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices (100) while increasing production yield, reliability, aesthetic appearance, and range of applications.

公开(公告)号：US10566479B2

公开(公告)日：2020-02-18

申请号：US16154709

申请日：2018-10-08

申请人： FLISOM AG

发明人： Roger Ziltener ,  Thomas Netter

IPC分类号： H01L31/0463 ,  H01L31/0749 ,  H01L31/18

摘要： A method for vias and monolithic interconnects in thin-film optoelectronic devices in which at least one line segment via hole is formed by laser drilling and passes through front-contact layers and semiconductive active layer, and in which laser drilling causes forming a CIGS-type wall of electrically conductive permanently metalized copper-rich CIGS-type alloy at the inner surface of the via hole, forming a conductive path between at least a portion of front-contact and a portion of back-contact layers, forming a bump-shaped raised portion at the surface of the front-contact layer, forming a raised portion of the back-contact layer, and optionally forming a raised portion of copper-rich CIGS-type alloy covering a portion of the front-contact layer. A thin-film CIGS device includes at least one line segment via hole obtainable by the method.

公开(公告)号：US10211357B2

公开(公告)日：2019-02-19

申请号：US15887595

申请日：2018-02-02

申请人： FLISOM AG

发明人： Reto Pfeiffer ,  Roger Ziltener ,  Thomas Netter

IPC分类号： H01L31/05 ,  H01L31/0465 ,  H01L31/0352 ,  H01L31/0224 ,  H01L31/046 ,  G06F17/50 ,  H01L31/02 ,  H01L31/0463

摘要： A thin-film optoelectronic module device (100) and design method comprising at least three monolithically-interconnected cells (104, 106, 108) where at least one monolithically-interconnecting line (250) depicts a spatial periodic or quasi-periodic wave and wherein the optoelectronic surface of said thin-film optoelectronic module device (100) presents at least one set of at least three zones (210, 220, 230) having curves of substantially parallel monolithic interconnect lines. Border zones (210, 230) have a lower front-contact sheet resistance than that of internal zone (220). Said curves of substantially parallel interconnecting lines may comprise peaks of triangular or rounded shape, additional spatial periods that are smaller than a baseline period, and mappings from one curve to the adjacent curve such as in the case of non-rectangular module devices (100). The device (100) and design method are advantageous to reduce costs and materials to manufacture thin-film optoelectronic module devices (100) while increasing production yield, reliability, aesthetic appearance, and range of applications.