HEATED ELECTROSTATIC CHUCK AND SEMICONDUCTOR WAFER HEATER AND METHODS FOR MANUFACTURING SAME
    1.
    发明申请
    HEATED ELECTROSTATIC CHUCK AND SEMICONDUCTOR WAFER HEATER AND METHODS FOR MANUFACTURING SAME 有权
    加热静电切片和半导体加热器及其制造方法

    公开(公告)号:US20140291311A1

    公开(公告)日:2014-10-02

    申请号:US14038039

    申请日:2013-09-26

    IPC分类号: H01L21/683

    摘要: A heated electrostatic chuck is provided, including a base having an upper surface and peripheral side surfaces, a thermal barrier coating formed by plasma deposition directly on at least the upper surface of the base, at least one heating element formed on portions of the thermal barrier coating, an electrically insulating layer formed on the heating element and exposed portions of the thermal barrier coating, at least one chucking electrode formed on at least a portion of the electrically insulating layer, and a protective layer formed on the chucking electrode.

    摘要翻译: 提供了一种加热的静电卡盘,其包括具有上表面和外周侧表面的基座,通过直接在基底的上表面上等离子体沉积形成的热障涂层,形成在热障壁的部分上的至少一个加热元件 涂覆,形成在所述加热元件上的电绝缘层和所述热障涂层的暴露部分,形成在所述电绝缘层的至少一部分上的至少一个夹持电极和形成在所述夹持电极上的保护层。

    Heated electrostatic chuck and semiconductor wafer heater and methods for manufacturing same
    2.
    发明授权
    Heated electrostatic chuck and semiconductor wafer heater and methods for manufacturing same 有权
    加热静电卡盘和半导体晶片加热器及其制造方法

    公开(公告)号:US09543183B2

    公开(公告)日:2017-01-10

    申请号:US14038039

    申请日:2013-09-26

    摘要: A heated electrostatic chuck is provided, including a base having an upper surface and peripheral side surfaces, a thermal barrier coating formed by plasma deposition directly on at least the upper surface of the base, at least one heating element formed on portions of the thermal barrier coating, an electrically insulating layer formed on the heating element and exposed portions of the thermal barrier coating, at least one chucking electrode formed on at least a portion of the electrically insulating layer, and a protective layer formed on the chucking electrode.

    摘要翻译: 提供了一种加热的静电卡盘,其包括具有上表面和外周侧表面的基座,通过直接在基底的上表面上等离子体沉积形成的热障涂层,形成在热障壁的部分上的至少一个加热元件 涂覆,形成在所述加热元件上的电绝缘层和所述热障涂层的暴露部分,形成在所述电绝缘层的至少一部分上的至少一个夹持电极和形成在所述夹持电极上的保护层。